JPS56105622A - Manufacture of silicon stick for semiconductor - Google Patents
Manufacture of silicon stick for semiconductorInfo
- Publication number
- JPS56105622A JPS56105622A JP790680A JP790680A JPS56105622A JP S56105622 A JPS56105622 A JP S56105622A JP 790680 A JP790680 A JP 790680A JP 790680 A JP790680 A JP 790680A JP S56105622 A JPS56105622 A JP S56105622A
- Authority
- JP
- Japan
- Prior art keywords
- frame
- constructing
- core
- troubles
- bridged
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
- 238000010276 construction Methods 0.000 abstract 2
- 239000011810 insulating material Substances 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- 150000001875 compounds Chemical class 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
Abstract
PURPOSE:To enable to prevent without fail the troubles such as distortion, inclination, collapse and the like generated in the early stage of reaction by a method wherein a plurality of frame-constructing carrier having a metal core are arranged on the curved lines and the space between frame-constructing material is bridged, using an insulating material, fixed and coupled. CONSTITUTION:A gaseous Si compound sent from a tube 3 is being feeded to an airtight container 2. A Ta core 4 is installed with its leg section connected to an electrode 5, its upper section is connected to the upper section of another Ta core 4 by a Ta bridge 6 and a frame-constructing 7 is formed. The leg sections of the plurality of these frame-constructing materials are arranged respectively on the inner and the outer curved lines which are making a polygon, and at the same time, the space between the adjoining frame-construction on a polygon is bridged by an insulating material 8 and coupled in a fixed manner. Accordingly, in the case when an extremely thin metal core is used to the carrier, the troubles such as distortion, inclination, collapse and the like frequently generated in the early stage of reaction can be prevented without fail, thereby enabling to take in a plurality of frame- constructions using a large-sized furnace.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP790680A JPS56105622A (en) | 1980-01-25 | 1980-01-25 | Manufacture of silicon stick for semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP790680A JPS56105622A (en) | 1980-01-25 | 1980-01-25 | Manufacture of silicon stick for semiconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS56105622A true JPS56105622A (en) | 1981-08-22 |
Family
ID=11678595
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP790680A Pending JPS56105622A (en) | 1980-01-25 | 1980-01-25 | Manufacture of silicon stick for semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56105622A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014100401A1 (en) * | 2012-12-19 | 2014-06-26 | Gtat Corporation | Methods and systems for stabilizing filaments in a chemical vapor deposition reactor |
| CN104357807A (en) * | 2008-03-26 | 2015-02-18 | Gtat公司 | Systems and methods for distributing gas in a chemical vapor deposition reactor |
| US11167994B2 (en) | 2014-12-25 | 2021-11-09 | Shin-Etsu Chemical Co., Ltd. | Polycrystalline silicon rod, processing method for polycrystalline silicon rod, method for evaluating polycrystalline silicon rod, and method for producing FZ single crystal silicon |
-
1980
- 1980-01-25 JP JP790680A patent/JPS56105622A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104357807A (en) * | 2008-03-26 | 2015-02-18 | Gtat公司 | Systems and methods for distributing gas in a chemical vapor deposition reactor |
| WO2014100401A1 (en) * | 2012-12-19 | 2014-06-26 | Gtat Corporation | Methods and systems for stabilizing filaments in a chemical vapor deposition reactor |
| KR20150096447A (en) * | 2012-12-19 | 2015-08-24 | 지티에이티 코포레이션 | Methods and systems for stabilizing filaments in a chemical vapor deposition reactor |
| CN104981560A (en) * | 2012-12-19 | 2015-10-14 | Gtat公司 | Methods and systems for stabilizing filaments in chemical vapor deposition reactor |
| US9701541B2 (en) | 2012-12-19 | 2017-07-11 | Gtat Corporation | Methods and systems for stabilizing filaments in a chemical vapor deposition reactor |
| US10513438B2 (en) | 2012-12-19 | 2019-12-24 | Oci Company Ltd. | Method for stabilizing filaments in a chemical vapor deposition reactor |
| US11167994B2 (en) | 2014-12-25 | 2021-11-09 | Shin-Etsu Chemical Co., Ltd. | Polycrystalline silicon rod, processing method for polycrystalline silicon rod, method for evaluating polycrystalline silicon rod, and method for producing FZ single crystal silicon |
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