JPS5595367A - Method of fabricating mos transistor - Google Patents

Method of fabricating mos transistor

Info

Publication number: JPS5595367A
Authority: JP; Japan
Prior art keywords: mos transistor; fabricating mos; fabricating; transistor; mos
Prior art date: 1973-01-15
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Pending

Application number

JP15628579A

Other languages

English (en)

Inventor

Poeru Shiizu Robaato

Rii Ruusu Robaato

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Fairchild Semiconductor Corp

Original Assignee

Fairchild Camera and Instrument Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1973-01-15

Filing date

1979-11-30

Publication date

1980-07-19

1979-11-30 Application filed by Fairchild Camera and Instrument Corp filed Critical Fairchild Camera and Instrument Corp

1980-07-19 Publication of JPS5595367A publication Critical patent/JPS5595367A/ja

Status Pending legal-status Critical Current

Landscapes

Element Separation (AREA)
Local Oxidation Of Silicon (AREA)
Insulated Gate Type Field-Effect Transistor (AREA)

JP15628579A 1973-01-15 1979-11-30 Method of fabricating mos transistor Pending JPS5595367A (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US32367273A	1973-01-15	1973-01-15

Publications (1)

Publication Number	Publication Date
JPS5595367A true JPS5595367A (en)	1980-07-19

Family

ID=23260226

Family Applications (3)

Application Number	Title	Priority Date	Filing Date
JP715574A Pending JPS49110280A (ja)	1973-01-15	1974-01-16
JP15628679A Granted JPS5595368A (en)	1973-01-15	1979-11-30	Method of fabricating mos transistor
JP15628579A Pending JPS5595367A (en)	1973-01-15	1979-11-30	Method of fabricating mos transistor

Family Applications Before (2)

Application Number	Title	Priority Date	Filing Date
JP715574A Pending JPS49110280A (ja)	1973-01-15	1974-01-16
JP15628679A Granted JPS5595368A (en)	1973-01-15	1979-11-30	Method of fabricating mos transistor

Country Status (6)

Country	Link
JP (3)	JPS49110280A (ja)
DD (1)	DD110386A5 (ja)
HK (1)	HK6580A (ja)
HU (1)	HU171264B (ja)
IT (1)	IT999786B (ja)
PL (1)	PL94622B1 (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5171677A (en) *	1974-12-18	1976-06-21	Mitsubishi Electric Corp	Handotaisochino seizohoho
JPS51142982A (en) *	1975-05-05	1976-12-08	Intel Corp	Method of producing single crystal silicon ic
JPS5353275A (en) *	1976-10-26	1978-05-15	Seiko Epson Corp	Semiconductor device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3475234A (en) *	1967-03-27	1969-10-28	Bell Telephone Labor Inc	Method for making mis structures

1973
- 1973-11-22 IT IT7043573A patent/IT999786B/it active
1974
- 1974-01-02 HU HU74FA00000956A patent/HU171264B/hu unknown
- 1974-01-11 DD DD17596374A patent/DD110386A5/xx unknown
- 1974-01-14 PL PL16808774A patent/PL94622B1/pl unknown
- 1974-01-16 JP JP715574A patent/JPS49110280A/ja active Pending
1979
- 1979-11-30 JP JP15628679A patent/JPS5595368A/ja active Granted
- 1979-11-30 JP JP15628579A patent/JPS5595367A/ja active Pending
1980
- 1980-02-28 HK HK6580A patent/HK6580A/xx unknown

Also Published As

Publication number	Publication date
PL94622B1 (pl)	1977-08-31
DD110386A5 (ja)	1974-12-12
JPS5595368A (en)	1980-07-19
JPS49110280A (ja)	1974-10-21
HK6580A (en)	1980-03-07
HU171264B (hu)	1977-12-28
JPS5549426B2 (ja)	1980-12-11
IT999786B (it)	1976-03-10

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