[go: up one dir, main page]

JPS559442A - Light emission element and its manufacturing method - Google Patents

Light emission element and its manufacturing method

Info

Publication number
JPS559442A
JPS559442A JP8221478A JP8221478A JPS559442A JP S559442 A JPS559442 A JP S559442A JP 8221478 A JP8221478 A JP 8221478A JP 8221478 A JP8221478 A JP 8221478A JP S559442 A JPS559442 A JP S559442A
Authority
JP
Japan
Prior art keywords
layer
light emission
thin film
wafer
solder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8221478A
Other languages
Japanese (ja)
Other versions
JPS5746669B2 (en
Inventor
Masafumi Hashimoto
Atsuyuki Kobayashi
Yukio Toyoda
Yoshimasa Oki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP8221478A priority Critical patent/JPS559442A/en
Publication of JPS559442A publication Critical patent/JPS559442A/en
Publication of JPS5746669B2 publication Critical patent/JPS5746669B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/061—Disposition
    • H01L2224/06102—Disposition the bonding areas being at different heights
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies

Landscapes

  • Led Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Led Device Packages (AREA)

Abstract

PURPOSE:To obtain heat resistent GaN light emission elements without connecting the stem the metal post and the ohmic electrode of the light emission element with metallic wire. CONSTITUTION:On a sapphire substrate 11, an n-type GaN layer 12 including light emitting impurities and a semi-insulating i-type GaN layer 13 are laminated. On the layer 13, concave parts reaching the layer 12 are formed and Al or Al alloy thin film 16 is evaporation-deposited. On the concave parts 19 and a part of the layer 13, Ni or Cu thin film 17 is selectively formed. If this wafer is dipped in a bath of solder including Pb, solder bumps 18 are formed on the film 17. At this time, the Al or Al alloy thin film 16 exposed on the wafer surface is eaten away by the solder and remaining parts 16' are removed by chemical etching. Finally, the wafer is cut into pieces so that each piece may have a pair of an ohmic electrode 14 and an i-type layer electrode 15, and GaN light emission elements 10 are completed. By so constructing, the element has two electrodes on its same side and is mass-productive, and it is highly reliable having no wire connection.
JP8221478A 1978-07-05 1978-07-05 Light emission element and its manufacturing method Granted JPS559442A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8221478A JPS559442A (en) 1978-07-05 1978-07-05 Light emission element and its manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8221478A JPS559442A (en) 1978-07-05 1978-07-05 Light emission element and its manufacturing method

Publications (2)

Publication Number Publication Date
JPS559442A true JPS559442A (en) 1980-01-23
JPS5746669B2 JPS5746669B2 (en) 1982-10-05

Family

ID=13768160

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8221478A Granted JPS559442A (en) 1978-07-05 1978-07-05 Light emission element and its manufacturing method

Country Status (1)

Country Link
JP (1) JPS559442A (en)

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04103666U (en) * 1991-02-18 1992-09-07 日亜化学工業株式会社 Electrode of blue light emitting device
JPH05129658A (en) * 1991-10-30 1993-05-25 Toyoda Gosei Co Ltd Gallium nitride compound semiconductor light emission device
JPH0559861U (en) * 1992-01-13 1993-08-06 日亜化学工業株式会社 Gallium nitride compound semiconductor device
JPH0745867A (en) * 1993-07-28 1995-02-14 Nichia Chem Ind Ltd Electrode of n-type gallium nitride compound semiconductor layer
JPH08274081A (en) * 1996-01-26 1996-10-18 Toyoda Gosei Co Ltd Method for etching gallium nitride compound semiconductor and method for forming electrode
JPH08316529A (en) * 1996-05-16 1996-11-29 Toyoda Gosei Co Ltd Gallium nitride compound semiconductor light emitting device
US6033927A (en) * 1996-09-20 2000-03-07 Toyoda Gosei Co., Ltd. Method for separating a substrate of a group III nitride semiconductor light-emitting device
US6507041B2 (en) 1993-04-28 2003-01-14 Nichia Chemical Industries, Ltd. Gallium nitride-based III-V group compound semiconductor
EP1313153A2 (en) * 1992-07-23 2003-05-21 Toyoda Gosei Co., Ltd. Light-emitting device of gallium nitride compound semiconductor
WO2003010833A3 (en) * 2001-07-23 2004-03-11 Cree Inc Flip chip bonding of light emitting devices and light emitting devices suitable for flip-chip bonding
US6734468B2 (en) * 1996-05-31 2004-05-11 Toyoda Gosei Co., Ltd. Devices related to electrode pads for p-type group III nitride compound semiconductors
US6761303B2 (en) * 1999-12-09 2004-07-13 Sony Corporation Semiconductor light-emitting device and method of manufacturing the same and mounting plate
JP2004343139A (en) * 2001-11-19 2004-12-02 Sanyo Electric Co Ltd Compound semiconductor light emitting device
JP2005005727A (en) * 2001-11-19 2005-01-06 Sanyo Electric Co Ltd Compound semiconductor light emitting device
JP2005026303A (en) * 2003-06-30 2005-01-27 Shin Etsu Handotai Co Ltd Luminescent module
JPWO2003044872A1 (en) * 2001-11-19 2005-03-24 三洋電機株式会社 Compound semiconductor light emitting device
JP2005123268A (en) * 2003-10-14 2005-05-12 Seiko Epson Corp Optical element and method for manufacturing the same, mounting structure between optical element and mounting substrate, mounting method between optical element and mounting substrate, optical module, and optical transmission device
GB2412234A (en) * 2004-03-18 2005-09-21 Sharp Kk Manufacture of a semiconductor light-emitting device

Cited By (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04103666U (en) * 1991-02-18 1992-09-07 日亜化学工業株式会社 Electrode of blue light emitting device
JPH05129658A (en) * 1991-10-30 1993-05-25 Toyoda Gosei Co Ltd Gallium nitride compound semiconductor light emission device
JP2666228B2 (en) * 1991-10-30 1997-10-22 豊田合成株式会社 Gallium nitride based compound semiconductor light emitting device
JPH0559861U (en) * 1992-01-13 1993-08-06 日亜化学工業株式会社 Gallium nitride compound semiconductor device
EP1313153A3 (en) * 1992-07-23 2005-05-04 Toyoda Gosei Co., Ltd. Light-emitting device of gallium nitride compound semiconductor
EP1313153A2 (en) * 1992-07-23 2003-05-21 Toyoda Gosei Co., Ltd. Light-emitting device of gallium nitride compound semiconductor
US7205220B2 (en) 1993-04-28 2007-04-17 Nichia Corporation Gallium nitride based III-V group compound semiconductor device and method of producing the same
US6998690B2 (en) 1993-04-28 2006-02-14 Nichia Corporation Gallium nitride based III-V group compound semiconductor device and method of producing the same
US6507041B2 (en) 1993-04-28 2003-01-14 Nichia Chemical Industries, Ltd. Gallium nitride-based III-V group compound semiconductor
US6610995B2 (en) 1993-04-28 2003-08-26 Nichia Corporation Gallium nitride-based III-V group compound semiconductor
US7375383B2 (en) 1993-04-28 2008-05-20 Nichia Corporation Gallium nitride based III-V group compound semiconductor device and method of producing the same
JPH0745867A (en) * 1993-07-28 1995-02-14 Nichia Chem Ind Ltd Electrode of n-type gallium nitride compound semiconductor layer
JPH08274081A (en) * 1996-01-26 1996-10-18 Toyoda Gosei Co Ltd Method for etching gallium nitride compound semiconductor and method for forming electrode
JPH08316529A (en) * 1996-05-16 1996-11-29 Toyoda Gosei Co Ltd Gallium nitride compound semiconductor light emitting device
US6734468B2 (en) * 1996-05-31 2004-05-11 Toyoda Gosei Co., Ltd. Devices related to electrode pads for p-type group III nitride compound semiconductors
US6033927A (en) * 1996-09-20 2000-03-07 Toyoda Gosei Co., Ltd. Method for separating a substrate of a group III nitride semiconductor light-emitting device
US7078730B2 (en) 1999-12-09 2006-07-18 Sony Corporation Semiconductor light-emitting device and method of manufacturing the same and mounting plate
US6761303B2 (en) * 1999-12-09 2004-07-13 Sony Corporation Semiconductor light-emitting device and method of manufacturing the same and mounting plate
US6888167B2 (en) 2001-07-23 2005-05-03 Cree, Inc. Flip-chip bonding of light emitting devices and light emitting devices suitable for flip-chip bonding
US7608860B2 (en) 2001-07-23 2009-10-27 Cree, Inc. Light emitting devices suitable for flip-chip bonding
CN100392874C (en) * 2001-07-23 2008-06-04 克里公司 Flip chip bonding of light emitting device and light emitting device suitable for flip chip bonding
WO2003010833A3 (en) * 2001-07-23 2004-03-11 Cree Inc Flip chip bonding of light emitting devices and light emitting devices suitable for flip-chip bonding
US7259033B2 (en) 2001-07-23 2007-08-21 Cree, Inc. Flip-chip bonding of light emitting devices
JP2005005727A (en) * 2001-11-19 2005-01-06 Sanyo Electric Co Ltd Compound semiconductor light emitting device
JP2004343139A (en) * 2001-11-19 2004-12-02 Sanyo Electric Co Ltd Compound semiconductor light emitting device
JPWO2003044872A1 (en) * 2001-11-19 2005-03-24 三洋電機株式会社 Compound semiconductor light emitting device
JP2005026303A (en) * 2003-06-30 2005-01-27 Shin Etsu Handotai Co Ltd Luminescent module
JP4735794B2 (en) * 2003-06-30 2011-07-27 信越半導体株式会社 Light emitting module
JP2005123268A (en) * 2003-10-14 2005-05-12 Seiko Epson Corp Optical element and method for manufacturing the same, mounting structure between optical element and mounting substrate, mounting method between optical element and mounting substrate, optical module, and optical transmission device
JP4686967B2 (en) * 2003-10-14 2011-05-25 セイコーエプソン株式会社 Manufacturing method of optical element
JP2005268800A (en) * 2004-03-18 2005-09-29 Sharp Corp Semiconductor light emitting device manufacturing
GB2412234A (en) * 2004-03-18 2005-09-21 Sharp Kk Manufacture of a semiconductor light-emitting device

Also Published As

Publication number Publication date
JPS5746669B2 (en) 1982-10-05

Similar Documents

Publication Publication Date Title
JPS559442A (en) Light emission element and its manufacturing method
GB1127070A (en) Electroplated contacts for semiconductor devices
US2962639A (en) Semiconductor devices and mounting means therefor
JPS57153479A (en) Nitride gallium light emitting element
JPS5728367A (en) Manufacture of semiconductor device
JPS5580366A (en) Production of compound semiconductor element
US3434828A (en) Gold alloy for attaching a lead to a semiconductor body
JPS5749252A (en) Manufacture of semiconductor device
JPS5642380A (en) Manufacture of schottky barrier type semiconductor device
JPS5469975A (en) Production of compound semiconductor light emitting elements
JPS5469977A (en) Forming method of electrodes for compound semiconducror light emitting elements
JPS56144559A (en) Compound semiconductor element
JPS5464482A (en) Manufacture for semiconductor device
JPS6461948A (en) Semiconductor device
JPS55111188A (en) Semiconductor laser device and manufacturing method thereof
JPS5645043A (en) Forming method for electrode lead
JPS5746226B2 (en)
JPS5555526A (en) Method of manufacturing electrode
JPS5763837A (en) Semiconductor device
JPS57138160A (en) Formation of electrode
JPS5469981A (en) Production of compound semiconductor light emitting elements
JPS57178388A (en) Semiconductor device
JPS5691467A (en) Dhd sealed semiconductor
JPS5394873A (en) Manufacture of ohmic contact electrode
JPS56158485A (en) Schottky barrier diode element