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JPS559433A - Electron beam exposure device - Google Patents

Electron beam exposure device

Info

Publication number
JPS559433A
JPS559433A JP8209578A JP8209578A JPS559433A JP S559433 A JPS559433 A JP S559433A JP 8209578 A JP8209578 A JP 8209578A JP 8209578 A JP8209578 A JP 8209578A JP S559433 A JPS559433 A JP S559433A
Authority
JP
Japan
Prior art keywords
pattern data
cell
basic
patterns
drawn
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8209578A
Other languages
Japanese (ja)
Other versions
JPS6348175B2 (en
Inventor
Yutaka Hitai
Nobuo Okuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP8209578A priority Critical patent/JPS559433A/en
Priority to US06/053,215 priority patent/US4280186A/en
Priority to DE2927413A priority patent/DE2927413C2/en
Publication of JPS559433A publication Critical patent/JPS559433A/en
Publication of JPS6348175B2 publication Critical patent/JPS6348175B2/ja
Granted legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T17/00—Three dimensional [3D] modelling, e.g. data description of 3D objects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Analytical Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Computer Graphics (AREA)
  • Geometry (AREA)
  • Software Systems (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To increase drawing speeds by dividing a drawing pattern to be drawn into basic figures, storing the parameters showing the basic figures, reading them in sequence and producing and storing dot data corresponding to the basic figures, supplying them in sequence to an electron optical system and scanning in rasters. CONSTITUTION:A drawing pattern to be drawn is divided into plural basic figure patterns and they are converted into pattern data representing the patterns with the coordinates of datum points and figure parameters. On the other hand, a figure to be drawn is divided into plural unit areas (cells), the pattern data corresponding to the plural basic figure patterns in each cell are made into a group and stored in a disk 17. Corresponding to the pattern data group of one cell taken out of the disk according to the order of drawing of each cell, dot pattern data are generated (20) and stored (21). While the dot pattern data of one cell are stored into the memory 21, the data of other memories are converted into the serial in sequence and are supplied to a beam optical system 11. By so doing, constant and high speed drawing can be executed using a trapezoid for basic figures.
JP8209578A 1978-07-07 1978-07-07 Electron beam exposure device Granted JPS559433A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP8209578A JPS559433A (en) 1978-07-07 1978-07-07 Electron beam exposure device
US06/053,215 US4280186A (en) 1978-07-07 1979-06-29 Exposure apparatus using electron beams
DE2927413A DE2927413C2 (en) 1978-07-07 1979-07-06 Electron beam exposure device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8209578A JPS559433A (en) 1978-07-07 1978-07-07 Electron beam exposure device

Publications (2)

Publication Number Publication Date
JPS559433A true JPS559433A (en) 1980-01-23
JPS6348175B2 JPS6348175B2 (en) 1988-09-28

Family

ID=13764858

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8209578A Granted JPS559433A (en) 1978-07-07 1978-07-07 Electron beam exposure device

Country Status (1)

Country Link
JP (1) JPS559433A (en)

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5857726A (en) * 1981-10-01 1983-04-06 Toshiba Mach Co Ltd Control device for electron beam image drawing
FR2514199A1 (en) * 1981-10-05 1983-04-08 Varian Associates PATTERN INFORMATION EXPLOITATION SYSTEM FOR AN ELECTRON BEAM EXPOSURE SYSTEM
JPS5870532A (en) * 1981-10-22 1983-04-27 Toshiba Mach Co Ltd Electron beam lithograph controlling device
JPS6394623A (en) * 1986-10-09 1988-04-25 Hitachi Ltd Device for pattern generation
DE10243827A1 (en) * 2002-09-14 2004-03-25 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Direct-write lithography method for forming sub-micrometer structure, e.g. photonic crystals, by interpolating layout data in-situ and selecting dose modulation to give exposure of circular areas by proximity effect
US6828078B2 (en) 2000-08-29 2004-12-07 Jsr Corporation Composition having refractive index sensitively changeable by radiation and method for forming refractive index pattern
US7071255B2 (en) 2001-02-19 2006-07-04 Jsr Corporation Radiation-sensitive composition capable of having refractive index distribution
US7108954B2 (en) 2000-12-11 2006-09-19 Jsr Corporation Radiation-sensitive composition changing in refractive index and method of changing refractive index
US7125647B2 (en) 2001-03-13 2006-10-24 Jsr Corporation Radiation-sensitive composition changing in refractive index and utilization thereof
US7205085B2 (en) 2001-08-01 2007-04-17 Jsr Corporation Composition having permitivity being radiation-sensitively changeable and method for forming permitivity pattern
JP2007199385A (en) * 2006-01-26 2007-08-09 Hitachi Via Mechanics Ltd Drawing device for printed circuit board
JP2008034439A (en) * 2006-07-26 2008-02-14 Nuflare Technology Inc Charged particle beam drawing apparatus and charged particle beam drawing method
JP2016076654A (en) * 2014-10-08 2016-05-12 株式会社ニューフレアテクノロジー Lithography data generation method, program, multi-charged particle beam lithography device and pattern inspection device
EP3284599A1 (en) 2004-01-09 2018-02-21 Fujifilm Corporation Lithographic printing plate precursor and lithographic printing method using the same
JP2019117961A (en) * 2019-04-25 2019-07-18 株式会社ニューフレアテクノロジー Drawing data generation method, program, multi-charged particle beam drawing apparatus, and pattern inspection apparatus

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50145865A (en) * 1974-04-18 1975-11-22
JPS51147967A (en) * 1975-06-14 1976-12-18 Fujitsu Ltd Method of controlling spot exposure

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50145865A (en) * 1974-04-18 1975-11-22
JPS51147967A (en) * 1975-06-14 1976-12-18 Fujitsu Ltd Method of controlling spot exposure

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5857726A (en) * 1981-10-01 1983-04-06 Toshiba Mach Co Ltd Control device for electron beam image drawing
FR2514199A1 (en) * 1981-10-05 1983-04-08 Varian Associates PATTERN INFORMATION EXPLOITATION SYSTEM FOR AN ELECTRON BEAM EXPOSURE SYSTEM
JPS5870532A (en) * 1981-10-22 1983-04-27 Toshiba Mach Co Ltd Electron beam lithograph controlling device
JPH0346970B2 (en) * 1981-10-22 1991-07-17 Toshiba Machine Co Ltd
JPS6394623A (en) * 1986-10-09 1988-04-25 Hitachi Ltd Device for pattern generation
US6828078B2 (en) 2000-08-29 2004-12-07 Jsr Corporation Composition having refractive index sensitively changeable by radiation and method for forming refractive index pattern
US7108954B2 (en) 2000-12-11 2006-09-19 Jsr Corporation Radiation-sensitive composition changing in refractive index and method of changing refractive index
US7071255B2 (en) 2001-02-19 2006-07-04 Jsr Corporation Radiation-sensitive composition capable of having refractive index distribution
US7125647B2 (en) 2001-03-13 2006-10-24 Jsr Corporation Radiation-sensitive composition changing in refractive index and utilization thereof
US7205085B2 (en) 2001-08-01 2007-04-17 Jsr Corporation Composition having permitivity being radiation-sensitively changeable and method for forming permitivity pattern
DE10243827B4 (en) * 2002-09-14 2004-09-09 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Direct writing electron beam - lithography process for the production of a two-dimensional structure in the submicrometer range
DE10243827A1 (en) * 2002-09-14 2004-03-25 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Direct-write lithography method for forming sub-micrometer structure, e.g. photonic crystals, by interpolating layout data in-situ and selecting dose modulation to give exposure of circular areas by proximity effect
EP3284599A1 (en) 2004-01-09 2018-02-21 Fujifilm Corporation Lithographic printing plate precursor and lithographic printing method using the same
JP2007199385A (en) * 2006-01-26 2007-08-09 Hitachi Via Mechanics Ltd Drawing device for printed circuit board
JP2008034439A (en) * 2006-07-26 2008-02-14 Nuflare Technology Inc Charged particle beam drawing apparatus and charged particle beam drawing method
JP2016076654A (en) * 2014-10-08 2016-05-12 株式会社ニューフレアテクノロジー Lithography data generation method, program, multi-charged particle beam lithography device and pattern inspection device
JP2019117961A (en) * 2019-04-25 2019-07-18 株式会社ニューフレアテクノロジー Drawing data generation method, program, multi-charged particle beam drawing apparatus, and pattern inspection apparatus

Also Published As

Publication number Publication date
JPS6348175B2 (en) 1988-09-28

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