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JPS5593598A - Memory unit - Google Patents

Memory unit

Info

Publication number
JPS5593598A
JPS5593598A JP80679A JP80679A JPS5593598A JP S5593598 A JPS5593598 A JP S5593598A JP 80679 A JP80679 A JP 80679A JP 80679 A JP80679 A JP 80679A JP S5593598 A JPS5593598 A JP S5593598A
Authority
JP
Japan
Prior art keywords
reproducing
blocks
circuits
generated
memory unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP80679A
Other languages
Japanese (ja)
Inventor
Hideo Fujita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP80679A priority Critical patent/JPS5593598A/en
Publication of JPS5593598A publication Critical patent/JPS5593598A/en
Pending legal-status Critical Current

Links

Landscapes

  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Memory System (AREA)

Abstract

PURPOSE: To correct errors for every reproducing and reduce the cell area to make a memory unit high-integration by constituting an error correction circuit between respective cell blocks.
CONSTITUTION: Parity generated in parity generation circuits 31W32 are stored in dummy memory cell blocks 5W6 respectively according to information of memory cell blocks 1W4 separated from one another, and error correction circuits 33W34 are constituted between respective blocks. Then, an error generated in a single block or reproducing circuit out of respective blocks or reproducing circuit 11W14 or errors generated simultaneously in adjacent blocks or reproducing circuits are corrected on the chip at a reproducing time by α rays.
COPYRIGHT: (C)1980,JPO&Japio
JP80679A 1979-01-05 1979-01-05 Memory unit Pending JPS5593598A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP80679A JPS5593598A (en) 1979-01-05 1979-01-05 Memory unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP80679A JPS5593598A (en) 1979-01-05 1979-01-05 Memory unit

Publications (1)

Publication Number Publication Date
JPS5593598A true JPS5593598A (en) 1980-07-16

Family

ID=11483918

Family Applications (1)

Application Number Title Priority Date Filing Date
JP80679A Pending JPS5593598A (en) 1979-01-05 1979-01-05 Memory unit

Country Status (1)

Country Link
JP (1) JPS5593598A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS621198A (en) * 1985-06-26 1987-01-07 Hitachi Ltd Semiconductor memory and its testing method
JP2003077294A (en) * 2001-08-31 2003-03-14 Mitsubishi Electric Corp Memory circuit
JP2007220278A (en) * 2006-02-13 2007-08-30 Samsung Electronics Co Ltd Semiconductor memory device and memory system including the same
WO2011067892A1 (en) * 2009-12-03 2011-06-09 パナソニック株式会社 Semiconductor memory device
JP2011238309A (en) * 2010-05-07 2011-11-24 Fujitsu Semiconductor Ltd Semiconductor memory, system and manufacturing method of semiconductor memory
JP2013041662A (en) * 2012-09-25 2013-02-28 Renesas Electronics Corp Semiconductor device
JPWO2012124063A1 (en) * 2011-03-15 2014-07-17 富士通株式会社 Semiconductor memory device and method for controlling semiconductor memory device

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS621198A (en) * 1985-06-26 1987-01-07 Hitachi Ltd Semiconductor memory and its testing method
JP2003077294A (en) * 2001-08-31 2003-03-14 Mitsubishi Electric Corp Memory circuit
JP2007220278A (en) * 2006-02-13 2007-08-30 Samsung Electronics Co Ltd Semiconductor memory device and memory system including the same
US8756475B2 (en) 2006-02-13 2014-06-17 Samsung Electronics Co., Ltd. Method of detecting error in a semiconductor memory device
WO2011067892A1 (en) * 2009-12-03 2011-06-09 パナソニック株式会社 Semiconductor memory device
US8687440B2 (en) 2009-12-03 2014-04-01 Panasonic Corporation Semiconductor memory device
JP2011238309A (en) * 2010-05-07 2011-11-24 Fujitsu Semiconductor Ltd Semiconductor memory, system and manufacturing method of semiconductor memory
JPWO2012124063A1 (en) * 2011-03-15 2014-07-17 富士通株式会社 Semiconductor memory device and method for controlling semiconductor memory device
JP2013041662A (en) * 2012-09-25 2013-02-28 Renesas Electronics Corp Semiconductor device

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