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JPS5591884A - Manufacture of amorphous photoconductive component - Google Patents

Manufacture of amorphous photoconductive component

Info

Publication number
JPS5591884A
JPS5591884A JP16584978A JP16584978A JPS5591884A JP S5591884 A JPS5591884 A JP S5591884A JP 16584978 A JP16584978 A JP 16584978A JP 16584978 A JP16584978 A JP 16584978A JP S5591884 A JPS5591884 A JP S5591884A
Authority
JP
Japan
Prior art keywords
layer
substrate
manufacture
heat treatment
amorphous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16584978A
Other languages
Japanese (ja)
Other versions
JPS6215857B2 (en
Inventor
Tadaharu Fukuda
Yutaka Hirai
Katsumi Nakagawa
Toshiyuki Komatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP16584978A priority Critical patent/JPS5591884A/en
Publication of JPS5591884A publication Critical patent/JPS5591884A/en
Publication of JPS6215857B2 publication Critical patent/JPS6215857B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Light Receiving Elements (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

PURPOSE: To stabilize optical and photoelectric characteristics by forming an amorphous photconductive layer (α-photoconductive layer) by means of operating heat treatment on a-Si:H layer formed on a substrate.
CONSTITUTION: Substrate 102 is fixed to base unit 103, and gas is drawn from bombs 108, 109 into heaping chamber 101. Next, by causing a glow discharge by means of electrodes 106, 107, a-Si:H layer is formed on substrate 102. After a-Si:H layer is formed in a specified thickness, the a-Si:H layer is sent to heat treating chamber 127 and is given heat treatment for specified time. Subsequently, the a- photoconductive layer formed on substrate 102 is taken out.
COPYRIGHT: (C)1980,JPO&Japio
JP16584978A 1978-12-28 1978-12-28 Manufacture of amorphous photoconductive component Granted JPS5591884A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16584978A JPS5591884A (en) 1978-12-28 1978-12-28 Manufacture of amorphous photoconductive component

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16584978A JPS5591884A (en) 1978-12-28 1978-12-28 Manufacture of amorphous photoconductive component

Publications (2)

Publication Number Publication Date
JPS5591884A true JPS5591884A (en) 1980-07-11
JPS6215857B2 JPS6215857B2 (en) 1987-04-09

Family

ID=15820158

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16584978A Granted JPS5591884A (en) 1978-12-28 1978-12-28 Manufacture of amorphous photoconductive component

Country Status (1)

Country Link
JP (1) JPS5591884A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1982001261A1 (en) * 1980-09-25 1982-04-15 Kk Canon Photoconductive member
JPS61170023A (en) * 1985-01-17 1986-07-31 ゼネラル・エレクトリック・カンパニイ Method for producing p-type hydrogenated amorphous silicon
JPS61275851A (en) * 1985-05-31 1986-12-05 Fuji Xerox Co Ltd Forming method for photoconductive element

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4064521A (en) * 1975-07-28 1977-12-20 Rca Corporation Semiconductor device having a body of amorphous silicon

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4064521A (en) * 1975-07-28 1977-12-20 Rca Corporation Semiconductor device having a body of amorphous silicon

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1982001261A1 (en) * 1980-09-25 1982-04-15 Kk Canon Photoconductive member
JPS61170023A (en) * 1985-01-17 1986-07-31 ゼネラル・エレクトリック・カンパニイ Method for producing p-type hydrogenated amorphous silicon
JPH0715885B2 (en) * 1985-01-17 1995-02-22 ゼネラル・エレクトリック・カンパニイ Method for producing p-type hydrogenated amorphous silicon
JPS61275851A (en) * 1985-05-31 1986-12-05 Fuji Xerox Co Ltd Forming method for photoconductive element

Also Published As

Publication number Publication date
JPS6215857B2 (en) 1987-04-09

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