JPS5580713A - Production of silicon carbide based on mainly beta-type crystal - Google Patents
Production of silicon carbide based on mainly beta-type crystalInfo
- Publication number
- JPS5580713A JPS5580713A JP14638979A JP14638979A JPS5580713A JP S5580713 A JPS5580713 A JP S5580713A JP 14638979 A JP14638979 A JP 14638979A JP 14638979 A JP14638979 A JP 14638979A JP S5580713 A JPS5580713 A JP S5580713A
- Authority
- JP
- Japan
- Prior art keywords
- sic
- mixt
- silica
- carbon
- zone
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title abstract 7
- 229910010271 silicon carbide Inorganic materials 0.000 title abstract 7
- 239000013078 crystal Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 5
- 238000010438 heat treatment Methods 0.000 abstract 5
- 239000000377 silicon dioxide Substances 0.000 abstract 4
- 229910052799 carbon Inorganic materials 0.000 abstract 3
- 229910002804 graphite Inorganic materials 0.000 abstract 2
- 239000010439 graphite Substances 0.000 abstract 2
- 239000007795 chemical reaction product Substances 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 238000001816 cooling Methods 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000010586 diagram Methods 0.000 abstract 1
- 229910003465 moissanite Inorganic materials 0.000 abstract 1
- 239000002994 raw material Substances 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Landscapes
- Carbon And Carbon Compounds (AREA)
Abstract
PURPOSE: To produce the title silicon carbide continuously and cheaply by supplying a mixt. of silica and carbon in a specified ratio into a vertical type indirectly resistance heating furnace and reacting them under specified conditions.
CONSTITUTION: A mixt. of silica and carbon in a C to SiO2 molar ratio of 3.2W 5.0 is supplied to raw material charge inlet 1 of the vertical type indirectly resistance heating furnace provided with graphite reflection tube 12, graphite heating element 10 and reactor 6 in heat insulating bed 9, and the mixt. is dropped through preheating section 2 by the empty wt. It is then introduced into heating zone 3 provided with U-form indirectly heating means 10, 11, 12 to induce SiC reaction at 1650W 2100°C while setting the filling width lcm in zone 3 to 10W28cm and dropping the burden at a dropping rate (Vm/hr) calculated by an equation relative to the width. The reaction product is dropped into cooling zone 4, cooled in a nonoxidizing atmosphere, and intermittently taken out of outlet 5 to obtain β-type SiC contg. 10% or less of α-type SiC. The average diameter of the β-type SiC is adjusted to 15μ or less. The wt. ratio of SiC, silica and free carbon is within the range bounded by points A, B, C, D in the diagram.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14638979A JPS5580713A (en) | 1979-11-14 | 1979-11-14 | Production of silicon carbide based on mainly beta-type crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14638979A JPS5580713A (en) | 1979-11-14 | 1979-11-14 | Production of silicon carbide based on mainly beta-type crystal |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5580713A true JPS5580713A (en) | 1980-06-18 |
| JPS5540527B2 JPS5540527B2 (en) | 1980-10-18 |
Family
ID=15406587
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14638979A Granted JPS5580713A (en) | 1979-11-14 | 1979-11-14 | Production of silicon carbide based on mainly beta-type crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5580713A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4529575A (en) * | 1982-08-27 | 1985-07-16 | Ibiden Kabushiki Kaisha | Process for producing ultrafine silicon carbide powder |
| US4543240A (en) * | 1980-02-08 | 1985-09-24 | Superior Graphite Co. | Method for the continuous production of carbides |
| US5340417A (en) * | 1989-01-11 | 1994-08-23 | The Dow Chemical Company | Process for preparing silicon carbide by carbothermal reduction |
| JP2009293086A (en) * | 2008-06-05 | 2009-12-17 | Honda Motor Co Ltd | Composite plating treatment method |
| CN105571333A (en) * | 2015-12-09 | 2016-05-11 | 西安交通大学 | Calcium carbide cooling device and method |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6194344U (en) * | 1984-11-24 | 1986-06-18 |
-
1979
- 1979-11-14 JP JP14638979A patent/JPS5580713A/en active Granted
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4543240A (en) * | 1980-02-08 | 1985-09-24 | Superior Graphite Co. | Method for the continuous production of carbides |
| US4529575A (en) * | 1982-08-27 | 1985-07-16 | Ibiden Kabushiki Kaisha | Process for producing ultrafine silicon carbide powder |
| US5340417A (en) * | 1989-01-11 | 1994-08-23 | The Dow Chemical Company | Process for preparing silicon carbide by carbothermal reduction |
| JP2009293086A (en) * | 2008-06-05 | 2009-12-17 | Honda Motor Co Ltd | Composite plating treatment method |
| CN105571333A (en) * | 2015-12-09 | 2016-05-11 | 西安交通大学 | Calcium carbide cooling device and method |
| CN105571333B (en) * | 2015-12-09 | 2017-08-01 | 西安交通大学 | Calcium carbide cooling device and method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5540527B2 (en) | 1980-10-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CA1084235A (en) | PROCESS AND AN APPARATUS FOR PRODUCING SILICON CARBIDE CONSISTING MAINLY OF .beta.-TYPE CRYSTAL | |
| KR100210261B1 (en) | Method of production for poly crystal silicon | |
| JPS6472984A (en) | Apparatus for producing single crystal | |
| EP0766645B1 (en) | Process for producing silicon carbide | |
| CA1310472C (en) | Process for the production of ultra high purity polycrystalline silicon | |
| JPS5580713A (en) | Production of silicon carbide based on mainly beta-type crystal | |
| JPS56100114A (en) | Alpha-type silicon nitride of high purity and its manufacture | |
| JPS63162033A (en) | Method and device for heat and/or reduction treating solid, granular and/or agglomerated charging material | |
| JPS60155507A (en) | Continuous production method of boron nitride | |
| US4656021A (en) | Method for the production of silicon | |
| US4390504A (en) | Apparatus for producing silicon carbide consisting mainly of β-type crystal | |
| US3438729A (en) | Preparation of finely divided crystalline metal carbides | |
| KR930000386A (en) | Continuous process for producing aluminum nitride by carbo-nitrification of alumina | |
| US3348915A (en) | Method for producing a crystalline carbide, boride or silicide | |
| JPS5622618A (en) | Continuous manufacture of sic | |
| JPS5888107A (en) | Continuous preparation of alpha-type silicon nitride | |
| KR890002965B1 (en) | Manufacture method and device of silicon semiconductor | |
| JPS5567514A (en) | High purity alpha-type silicon nitride and production thereof | |
| JPS56100125A (en) | Manufacture of silicon carbide whisker | |
| JPS55126597A (en) | Single crystal growing method | |
| KR960014593B1 (en) | Method for producing high purity granular polycrystalline silicon by fluidized bed heating method by microwave | |
| JPS59121109A (en) | Production of high purity silicon | |
| JPS5945637B2 (en) | Method for manufacturing silicon carbide whiskers | |
| JPS5945636B2 (en) | Method for manufacturing silicon carbide whiskers | |
| Huang | PREPARATION OF ALUMINIUM NITRIDE POWDER |