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JPS5570986A - Semiconductor intergrated circuit device - Google Patents

Semiconductor intergrated circuit device

Info

Publication number
JPS5570986A
JPS5570986A JP14419678A JP14419678A JPS5570986A JP S5570986 A JPS5570986 A JP S5570986A JP 14419678 A JP14419678 A JP 14419678A JP 14419678 A JP14419678 A JP 14419678A JP S5570986 A JPS5570986 A JP S5570986A
Authority
JP
Japan
Prior art keywords
circuit
power supply
memory
matrix
circuit device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14419678A
Other languages
Japanese (ja)
Inventor
Hideo Hara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP14419678A priority Critical patent/JPS5570986A/en
Publication of JPS5570986A publication Critical patent/JPS5570986A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Static Random-Access Memory (AREA)

Abstract

PURPOSE:To constitute low power consumption, by selectively performing power supply to the memory matrix and other circuit. CONSTITUTION:The memory circuit consisting of the static type RAM memory matrix 2 and its peripheral circuit 3, memory circuit 4 consisting of ROM, and logic circuit 5 are provided. Further, the load of each circuit is constituted with the E/D MIS circuit using depletion type MISFET, the power supply line for the matrix 2, circuit 3, ROM4, and logic circuit 5 is independently provided and the power supply voltages VDD, VDD' are supplied.
JP14419678A 1978-11-24 1978-11-24 Semiconductor intergrated circuit device Pending JPS5570986A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14419678A JPS5570986A (en) 1978-11-24 1978-11-24 Semiconductor intergrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14419678A JPS5570986A (en) 1978-11-24 1978-11-24 Semiconductor intergrated circuit device

Publications (1)

Publication Number Publication Date
JPS5570986A true JPS5570986A (en) 1980-05-28

Family

ID=15356438

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14419678A Pending JPS5570986A (en) 1978-11-24 1978-11-24 Semiconductor intergrated circuit device

Country Status (1)

Country Link
JP (1) JPS5570986A (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0089836A3 (en) * 1982-03-19 1985-12-04 Fujitsu Limited Static-type semiconductor memory device
WO2007134281A3 (en) * 2006-05-15 2008-03-13 Apple Inc Two levels of voltage regulation supplied for logic and data programming voltage of a memory device
US7511646B2 (en) 2006-05-15 2009-03-31 Apple Inc. Use of 8-bit or higher A/D for NAND cell value
US7551486B2 (en) 2006-05-15 2009-06-23 Apple Inc. Iterative memory cell charging based on reference cell value
US7568135B2 (en) 2006-05-15 2009-07-28 Apple Inc. Use of alternative value in cell detection
US7613043B2 (en) 2006-05-15 2009-11-03 Apple Inc. Shifting reference values to account for voltage sag
US7639531B2 (en) 2006-05-15 2009-12-29 Apple Inc. Dynamic cell bit resolution
US7639542B2 (en) 2006-05-15 2009-12-29 Apple Inc. Maintenance operations for multi-level data storage cells
US7852690B2 (en) 2006-05-15 2010-12-14 Apple Inc. Multi-chip package for a flash memory
US7911834B2 (en) 2006-05-15 2011-03-22 Apple Inc. Analog interface for a flash memory die
US9042170B2 (en) 2006-05-15 2015-05-26 Apple Inc. Off-die charge pump that supplies multiple flash devices

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0089836A3 (en) * 1982-03-19 1985-12-04 Fujitsu Limited Static-type semiconductor memory device
WO2007134281A3 (en) * 2006-05-15 2008-03-13 Apple Inc Two levels of voltage regulation supplied for logic and data programming voltage of a memory device
US7511646B2 (en) 2006-05-15 2009-03-31 Apple Inc. Use of 8-bit or higher A/D for NAND cell value
US7551486B2 (en) 2006-05-15 2009-06-23 Apple Inc. Iterative memory cell charging based on reference cell value
US7568135B2 (en) 2006-05-15 2009-07-28 Apple Inc. Use of alternative value in cell detection
US7613043B2 (en) 2006-05-15 2009-11-03 Apple Inc. Shifting reference values to account for voltage sag
US7639531B2 (en) 2006-05-15 2009-12-29 Apple Inc. Dynamic cell bit resolution
US7639542B2 (en) 2006-05-15 2009-12-29 Apple Inc. Maintenance operations for multi-level data storage cells
US7701797B2 (en) 2006-05-15 2010-04-20 Apple Inc. Two levels of voltage regulation supplied for logic and data programming voltage of a memory device
US7852690B2 (en) 2006-05-15 2010-12-14 Apple Inc. Multi-chip package for a flash memory
US7852674B2 (en) 2006-05-15 2010-12-14 Apple Inc. Dynamic cell bit resolution
US7881108B2 (en) 2006-05-15 2011-02-01 Apple Inc. Maintenance operations for multi-level data storage cells
US7911834B2 (en) 2006-05-15 2011-03-22 Apple Inc. Analog interface for a flash memory die
US8127202B2 (en) 2006-05-15 2012-02-28 Apple Inc. Use of alternative value in cell detection
US8356231B2 (en) 2006-05-15 2013-01-15 Apple Inc. Use of alternative value in cell detection
US9042170B2 (en) 2006-05-15 2015-05-26 Apple Inc. Off-die charge pump that supplies multiple flash devices

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