JPS5563829A - Semiconductor etching device - Google Patents
Semiconductor etching deviceInfo
- Publication number
- JPS5563829A JPS5563829A JP13749378A JP13749378A JPS5563829A JP S5563829 A JPS5563829 A JP S5563829A JP 13749378 A JP13749378 A JP 13749378A JP 13749378 A JP13749378 A JP 13749378A JP S5563829 A JPS5563829 A JP S5563829A
- Authority
- JP
- Japan
- Prior art keywords
- solution
- etching
- semiconductor
- discharged
- cleaning
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005530 etching Methods 0.000 title abstract 11
- 239000004065 semiconductor Substances 0.000 title abstract 6
- 238000004140 cleaning Methods 0.000 abstract 7
- 238000011084 recovery Methods 0.000 abstract 4
- 239000007788 liquid Substances 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 239000002699 waste material Substances 0.000 abstract 1
Landscapes
- Weting (AREA)
Abstract
PURPOSE: To prevent the oxidization of a semiconductor, by covering the surface of a semiconductor with a processing liquid at the time of cleaning after etching is stopped.
CONSTITUTION: Processing tank 1 is filled with etching solution 19. After etching a semiconductor, recovery discharge valve 7 is opened, and solution 19 is discharged into recovery tank 8 from processing tank 1. The semiconductor is soaked in etching solution 19, and before the etching solution is discharged completely from the processing tank, recovery discharge valve 7 is closed and cleaning solution shower discharge valve 16 is opened. The cleaning solution overflows from the upper part of processing tank 1, flows to conduit 2, dilutes the etching solution and stops the etching. Waste discharge valve 4 is opened, the cleaning solution is blown against the semiconductor from clearing solution shower 17 and thus it is discharged. Valve 4 is closed, valve 15 is opened, the cleaning solution is filled again, it is discharged, and cleaning is done repeatedly. When etching is to be operated again, the cleaning solution is discharged (4), pump 11 is operated, etching solution is supplied from recovery tank 8 to processing tank 1, and thus the etching solution is used again.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13749378A JPS5563829A (en) | 1978-11-08 | 1978-11-08 | Semiconductor etching device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13749378A JPS5563829A (en) | 1978-11-08 | 1978-11-08 | Semiconductor etching device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5563829A true JPS5563829A (en) | 1980-05-14 |
Family
ID=15199935
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13749378A Pending JPS5563829A (en) | 1978-11-08 | 1978-11-08 | Semiconductor etching device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5563829A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6273543U (en) * | 1985-10-25 | 1987-05-11 |
-
1978
- 1978-11-08 JP JP13749378A patent/JPS5563829A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6273543U (en) * | 1985-10-25 | 1987-05-11 |
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