JPS5561049A - Radiator for semiconductor - Google Patents
Radiator for semiconductorInfo
- Publication number
- JPS5561049A JPS5561049A JP13425978A JP13425978A JPS5561049A JP S5561049 A JPS5561049 A JP S5561049A JP 13425978 A JP13425978 A JP 13425978A JP 13425978 A JP13425978 A JP 13425978A JP S5561049 A JPS5561049 A JP S5561049A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- block
- ceramic
- thickness
- insulation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 5
- 239000000919 ceramic Substances 0.000 abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000011247 coating layer Substances 0.000 abstract 2
- 238000009413 insulation Methods 0.000 abstract 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 239000010410 layer Substances 0.000 abstract 1
- 230000005855 radiation Effects 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
Landscapes
- Cooling Or The Like Of Electrical Apparatus (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
PURPOSE: To obtain such radiator as is small in thermal resistance and superior in insulation by providing a ceramic flame coating layer at a contact zone of a semiconductor mounting block and a radiating unit or a semiconductor.
CONSTITUTION: A metallic ceramic high in heat conductivity and large in dielectric strength like alumina, silica, etc. is fused to fine grain and injected. A ceramic flame coating layer 11 is provided on the outer periphery of a pipe 5 at a semiconductor block 10 mounting part or the inner periphery of the block at the other end of a radiating unit 3 with a plural number of radiation fins provided on one end of the pipe 5. The block 10 is made of Cu, Al, etc., on which a semiconductor 4 is mounted. The ceramic layer is arranged to have a thickness at 50W300μ. Where the thickness is below 50μ, insulation is not secured thoroughly; where the thickness exceeds 300μ, thermal resistance increases.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13425978A JPS5561049A (en) | 1978-10-31 | 1978-10-31 | Radiator for semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13425978A JPS5561049A (en) | 1978-10-31 | 1978-10-31 | Radiator for semiconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5561049A true JPS5561049A (en) | 1980-05-08 |
Family
ID=15124106
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13425978A Pending JPS5561049A (en) | 1978-10-31 | 1978-10-31 | Radiator for semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5561049A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5954950U (en) * | 1982-09-30 | 1984-04-10 | 松下電器産業株式会社 | Hybrid integrated circuit device |
| JPS60937U (en) * | 1983-06-15 | 1985-01-07 | 富士通株式会社 | Semiconductor chip heat dissipation structure |
| JPS6183095U (en) * | 1984-11-06 | 1986-06-02 | ||
| US4688077A (en) * | 1982-03-29 | 1987-08-18 | Fujitsu Limited | Semiconductor device having radiator |
| US7440280B2 (en) * | 2006-03-31 | 2008-10-21 | Hong Kong Applied Science & Technology Research Institute Co., Ltd | Heat exchange enhancement |
| US7593229B2 (en) * | 2006-03-31 | 2009-09-22 | Hong Kong Applied Science & Technology Research Institute Co. Ltd | Heat exchange enhancement |
-
1978
- 1978-10-31 JP JP13425978A patent/JPS5561049A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4688077A (en) * | 1982-03-29 | 1987-08-18 | Fujitsu Limited | Semiconductor device having radiator |
| JPS5954950U (en) * | 1982-09-30 | 1984-04-10 | 松下電器産業株式会社 | Hybrid integrated circuit device |
| JPS60937U (en) * | 1983-06-15 | 1985-01-07 | 富士通株式会社 | Semiconductor chip heat dissipation structure |
| JPS6350854Y2 (en) * | 1983-06-15 | 1988-12-27 | ||
| JPS6183095U (en) * | 1984-11-06 | 1986-06-02 | ||
| US7440280B2 (en) * | 2006-03-31 | 2008-10-21 | Hong Kong Applied Science & Technology Research Institute Co., Ltd | Heat exchange enhancement |
| US7593229B2 (en) * | 2006-03-31 | 2009-09-22 | Hong Kong Applied Science & Technology Research Institute Co. Ltd | Heat exchange enhancement |
| US7651253B2 (en) | 2006-03-31 | 2010-01-26 | Hong Kong Applied Science & Technology Research Institute Co., Ltd | Heat exchange enhancement |
| US7800898B2 (en) | 2006-03-31 | 2010-09-21 | Hong Kong Applied Science And Technology Research Institute Co. Ltd. | Heat exchange enhancement |
| US7826214B2 (en) | 2006-03-31 | 2010-11-02 | Hong Kong Applied Science And Technology Research Institute Co., Ltd. | Heat exchange enhancement |
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