JPS5554573A - Etching method for substrate - Google Patents
Etching method for substrateInfo
- Publication number
- JPS5554573A JPS5554573A JP12681178A JP12681178A JPS5554573A JP S5554573 A JPS5554573 A JP S5554573A JP 12681178 A JP12681178 A JP 12681178A JP 12681178 A JP12681178 A JP 12681178A JP S5554573 A JPS5554573 A JP S5554573A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- vessel
- solution
- substrate
- accomodated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005530 etching Methods 0.000 title abstract 9
- 238000000034 method Methods 0.000 title abstract 4
- 239000000758 substrate Substances 0.000 title abstract 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 abstract 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 abstract 2
- 229910017604 nitric acid Inorganic materials 0.000 abstract 2
- 229910012463 LiTaO3 Inorganic materials 0.000 abstract 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 abstract 1
- 239000004809 Teflon Substances 0.000 abstract 1
- 229920006362 Teflon® Polymers 0.000 abstract 1
- 238000009835 boiling Methods 0.000 abstract 1
- 238000007598 dipping method Methods 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 238000007789 sealing Methods 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Landscapes
- ing And Chemical Polishing (AREA)
Abstract
PURPOSE: To sharply improve the etching velocity compared with usual method, by providing non-etching substrate in closely sealed vessel accomodated aqueous etching solution containng F ion and etching the substate at the temperature more than boiling point.
CONSTITUTION: Water soluble etching solution (containing HF; 10W25mol. and HNO3; 1W7mol or H2SO4; 1W10mol. in the solution ane also, HBr, H3PO4 etc. is able to use), such as HNO3, H2SO4 etc. containing HF, is accomodated in the etching vessel composed of the cover 1, Teflon vessel 2, the vessel 4 made of SAS and the outer cover 3 etc. and etching is carried out under pressure heating suitably at the temperature more than 150°C and less than 250°C after dipping the substrate to be etched, such as LiTaO3 etc., in the above solution and sealing the vessel closely. By the above method, etching speed and effect are made more than ten times compared with usual method and control is made easy and also, superior reproducibility is able to obtain.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP53126811A JPS5942747B2 (en) | 1978-10-17 | 1978-10-17 | Substrate etching method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP53126811A JPS5942747B2 (en) | 1978-10-17 | 1978-10-17 | Substrate etching method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5554573A true JPS5554573A (en) | 1980-04-21 |
| JPS5942747B2 JPS5942747B2 (en) | 1984-10-17 |
Family
ID=14944535
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP53126811A Expired JPS5942747B2 (en) | 1978-10-17 | 1978-10-17 | Substrate etching method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5942747B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6461978B1 (en) | 1998-10-23 | 2002-10-08 | Lg. Philips Lcd Co., Ltd. | Method of manufacturing a substrate for an electronic device by using etchant and electronic device having the substrate |
| CN105839109A (en) * | 2016-05-04 | 2016-08-10 | 合肥江航飞机装备有限公司 | Bath solution formula for precise alloy 3J1 chemical polishing |
-
1978
- 1978-10-17 JP JP53126811A patent/JPS5942747B2/en not_active Expired
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6461978B1 (en) | 1998-10-23 | 2002-10-08 | Lg. Philips Lcd Co., Ltd. | Method of manufacturing a substrate for an electronic device by using etchant and electronic device having the substrate |
| US7101809B2 (en) | 1998-10-23 | 2006-09-05 | Lg.Philips Lcd Co., Ltd. | Method of manufacturing a substrate for an electronic device by using etchant and electronic device having the substrate |
| US7202165B2 (en) | 1998-10-23 | 2007-04-10 | Lg.Philips Lcd Co., Ltd | Electronic device having a stacked wiring layer including Al and Ti |
| DE19951055B4 (en) * | 1998-10-23 | 2017-08-24 | Lg Display Co., Ltd. | A method of manufacturing a substrate for electronic devices using an etchant |
| CN105839109A (en) * | 2016-05-04 | 2016-08-10 | 合肥江航飞机装备有限公司 | Bath solution formula for precise alloy 3J1 chemical polishing |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5942747B2 (en) | 1984-10-17 |
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