JPS55500965A - - Google Patents
Info
- Publication number
- JPS55500965A JPS55500965A JP50018479A JP50018479A JPS55500965A JP S55500965 A JPS55500965 A JP S55500965A JP 50018479 A JP50018479 A JP 50018479A JP 50018479 A JP50018479 A JP 50018479A JP S55500965 A JPS55500965 A JP S55500965A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/213—Channel regions of field-effect devices
- H10D62/221—Channel regions of field-effect devices of FETs
- H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
- H10D62/299—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations
- H10D62/307—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations the doping variations being parallel to the channel lengths
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US96401478A | 1978-11-27 | 1978-11-27 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS55500965A true JPS55500965A (de) | 1980-11-13 |
Family
ID=25508027
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50018479A Pending JPS55500965A (de) | 1978-11-27 | 1979-11-26 |
Country Status (3)
| Country | Link |
|---|---|
| EP (1) | EP0020708A4 (de) |
| JP (1) | JPS55500965A (de) |
| WO (1) | WO1980001122A1 (de) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IT1191561B (it) * | 1986-06-03 | 1988-03-23 | Sgs Microelettrica Spa | Dispositivo di memoria non labile a semiconduttore con porta non connessa (floating gate) alterabile elettricamente |
| JP2744126B2 (ja) * | 1990-10-17 | 1998-04-28 | 株式会社東芝 | 半導体装置 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3719866A (en) * | 1970-12-03 | 1973-03-06 | Ncr | Semiconductor memory device |
| JPS5024084A (de) * | 1973-07-05 | 1975-03-14 | ||
| DE2418582C3 (de) * | 1974-04-17 | 1978-09-14 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | MNOS-Transistor, insbesondere MNOS-Transistor mit kurzer Kanalzone, für kurze Einschreibzeiten |
| US4068217A (en) * | 1975-06-30 | 1978-01-10 | International Business Machines Corporation | Ultimate density non-volatile cross-point semiconductor memory array |
| US4017888A (en) * | 1975-12-31 | 1977-04-12 | International Business Machines Corporation | Non-volatile metal nitride oxide semiconductor device |
| JPS52105784A (en) * | 1976-03-01 | 1977-09-05 | Sony Corp | Mios type memory unit |
| DE2720715A1 (de) * | 1977-05-07 | 1978-11-09 | Itt Ind Gmbh Deutsche | Mnos-speichertransistor |
| US4151538A (en) * | 1978-01-30 | 1979-04-24 | Rca Corp. | Nonvolatile semiconductive memory device and method of its manufacture |
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1979
- 1979-11-26 JP JP50018479A patent/JPS55500965A/ja active Pending
- 1979-11-26 WO PCT/US1979/001025 patent/WO1980001122A1/en not_active Application Discontinuation
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1980
- 1980-06-03 EP EP19800900104 patent/EP0020708A4/de not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| EP0020708A4 (de) | 1983-03-07 |
| EP0020708A1 (de) | 1981-01-07 |
| WO1980001122A1 (en) | 1980-05-29 |