JPS5533004A - Lead material for semiconductor - Google Patents
Lead material for semiconductorInfo
- Publication number
- JPS5533004A JPS5533004A JP10434378A JP10434378A JPS5533004A JP S5533004 A JPS5533004 A JP S5533004A JP 10434378 A JP10434378 A JP 10434378A JP 10434378 A JP10434378 A JP 10434378A JP S5533004 A JPS5533004 A JP S5533004A
- Authority
- JP
- Japan
- Prior art keywords
- lead material
- amount
- kinds
- weight
- content
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 title abstract 4
- 239000004065 semiconductor Substances 0.000 title 1
- 239000012535 impurity Substances 0.000 abstract 2
- 238000005452 bending Methods 0.000 abstract 1
- 238000005097 cold rolling Methods 0.000 abstract 1
- 238000005098 hot rolling Methods 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 238000005554 pickling Methods 0.000 abstract 1
- 239000002994 raw material Substances 0.000 abstract 1
Landscapes
- Conductive Materials (AREA)
Abstract
PURPOSE: To eliminate peeling due to oxidation in the lead material made of Cu with a heat resistibility and a softness by adding one or more kinds of Al, Mn and Si in an amount of 0.005W0.2% by weight with P exceeding no more than the content of unavoidalbe impurities.
CONSTITUTION: One or more kinds of Al, Mn and Si in an amount of 0.005W 0.2% by weight is added to a Cu lead material containing small amount of Ag, provided that P contained exceeds no more than the content of unavoidable impurities. Raw material with such a composition is cast into an ingot in a proper size which is cut on the both surfaces after a hot rolling. Then following repetition of cold rolling, medium annealling, and pickling, it is cold rolled to the final thickness to make a lead material. In this manner, after it is heated up to 450°C for 15 minutes and cooled down to a normal temperature, a bending test shows that the rate of peeling can be reduced to zero, negligible if any.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10434378A JPS5533004A (en) | 1978-08-29 | 1978-08-29 | Lead material for semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10434378A JPS5533004A (en) | 1978-08-29 | 1978-08-29 | Lead material for semiconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5533004A true JPS5533004A (en) | 1980-03-08 |
Family
ID=14378256
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10434378A Pending JPS5533004A (en) | 1978-08-29 | 1978-08-29 | Lead material for semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5533004A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5130274A (en) * | 1991-04-05 | 1992-07-14 | International Business Machines Corporation | Copper alloy metallurgies for VLSI interconnection structures |
-
1978
- 1978-08-29 JP JP10434378A patent/JPS5533004A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5130274A (en) * | 1991-04-05 | 1992-07-14 | International Business Machines Corporation | Copper alloy metallurgies for VLSI interconnection structures |
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