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JPS5532672A - Thin film type thermal head - Google Patents

Thin film type thermal head

Info

Publication number
JPS5532672A
JPS5532672A JP10712778A JP10712778A JPS5532672A JP S5532672 A JPS5532672 A JP S5532672A JP 10712778 A JP10712778 A JP 10712778A JP 10712778 A JP10712778 A JP 10712778A JP S5532672 A JPS5532672 A JP S5532672A
Authority
JP
Japan
Prior art keywords
heat
film
insulation substrate
thermal head
expansion coefficient
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10712778A
Other languages
Japanese (ja)
Inventor
Masaji Arai
Keizaburo Kuramasu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP10712778A priority Critical patent/JPS5532672A/en
Publication of JPS5532672A publication Critical patent/JPS5532672A/en
Pending legal-status Critical Current

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  • Non-Adjustable Resistors (AREA)

Abstract

PURPOSE: To improve the heat resisting pulse response of a recording head by making the heat expansion coefficient of the wear resisting layer smaller than that of the insulation substrate in a thin film type thermal head for heat-sensitive recording.
CONSTITUTION: A insulation substrate consists of a crystalized glass substrate 7 with the heat expansion coefficient of α=90×10-7, upon which an Si-Ta composite film as a heating resister film 8 is formed in the stripe form. Further, Ni-Au are formed thereupon as electrode thin films 9. An Ni film 9a is directly contacted with the heating layer 8, while an Au film 9b is located not to contact with the heating portion in order to avoid the Au-Si reaction at the time of applying the voltage. Then, a wear resisting layer 10 consisted of dispersed SiC-SiO2 or dispersed Al2O3 through a sputtering. This enalbes to improve the heat resisting pulse response of the thermal head due to the selection of the insulation substrate materials making the heat expansion coefficient of the wear resisting materials smaller than that of the insulation substrate.
COPYRIGHT: (C)1980,JPO&Japio
JP10712778A 1978-08-31 1978-08-31 Thin film type thermal head Pending JPS5532672A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10712778A JPS5532672A (en) 1978-08-31 1978-08-31 Thin film type thermal head

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10712778A JPS5532672A (en) 1978-08-31 1978-08-31 Thin film type thermal head

Publications (1)

Publication Number Publication Date
JPS5532672A true JPS5532672A (en) 1980-03-07

Family

ID=14451172

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10712778A Pending JPS5532672A (en) 1978-08-31 1978-08-31 Thin film type thermal head

Country Status (1)

Country Link
JP (1) JPS5532672A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02536A (en) * 1988-01-14 1990-01-05 Tokyo Electric Co Ltd Thermal head

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02536A (en) * 1988-01-14 1990-01-05 Tokyo Electric Co Ltd Thermal head

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