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JPS5530835A - Method of forming heterogeneous junction in semiconductor - Google Patents

Method of forming heterogeneous junction in semiconductor

Info

Publication number
JPS5530835A
JPS5530835A JP10367378A JP10367378A JPS5530835A JP S5530835 A JPS5530835 A JP S5530835A JP 10367378 A JP10367378 A JP 10367378A JP 10367378 A JP10367378 A JP 10367378A JP S5530835 A JPS5530835 A JP S5530835A
Authority
JP
Japan
Prior art keywords
thin film
substrate
gaas
semiconductor
grown
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10367378A
Other languages
Japanese (ja)
Other versions
JPS5625774B2 (en
Inventor
Takashi Katoda
Masato Kishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP10367378A priority Critical patent/JPS5530835A/en
Priority to US06/001,170 priority patent/US4216037A/en
Publication of JPS5530835A publication Critical patent/JPS5530835A/en
Publication of JPS5625774B2 publication Critical patent/JPS5625774B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

PURPOSE: To obtain superior crystal structure and physical characteristics by providing a thin film made of an element that belongs to the same group as an element that composes a semiconductor layer before froming the semiconductor on a heterogenous substrate.
CONSTITUTION: A P or Sb thin film is formed on a Si substrate by means of a physical means such as vacuum vapor coating before GaAs is grown on the substrate. Then GaAs is given vapor growth. If obtained GaAs is multicrystal, it is converted into a single crystal by anealing. One of conductor elements to be grown may be added to the thin film. For instance, GaP is given vapor growth after forming a Sb and P thin film on the Si substrate. By so doing, difference in latice constants and thermal expansion coefficients are reduced by means of the thin film, thus obtaining a high quality heterogenous junction. It can be made into a sapphire substrate or can be applied to IIWVI group compound substrates.
COPYRIGHT: (C)1980,JPO&Japio
JP10367378A 1978-01-06 1978-08-25 Method of forming heterogeneous junction in semiconductor Granted JPS5530835A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP10367378A JPS5530835A (en) 1978-08-25 1978-08-25 Method of forming heterogeneous junction in semiconductor
US06/001,170 US4216037A (en) 1978-01-06 1979-01-05 Method for manufacturing a heterojunction semiconductor device by disappearing intermediate layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10367378A JPS5530835A (en) 1978-08-25 1978-08-25 Method of forming heterogeneous junction in semiconductor

Publications (2)

Publication Number Publication Date
JPS5530835A true JPS5530835A (en) 1980-03-04
JPS5625774B2 JPS5625774B2 (en) 1981-06-15

Family

ID=14360305

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10367378A Granted JPS5530835A (en) 1978-01-06 1978-08-25 Method of forming heterogeneous junction in semiconductor

Country Status (1)

Country Link
JP (1) JPS5530835A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01245512A (en) * 1988-03-28 1989-09-29 Nippon Telegr & Teleph Corp <Ntt> Formation of iii-v compound semiconductor by epitaxial growth

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4834452A (en) * 1971-09-03 1973-05-18
JPS516666A (en) * 1974-07-06 1976-01-20 Handotai Kenkyu Shinkokai TANKETSUSHOHAKUMAKUSAKUSEIHOHO

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4834452A (en) * 1971-09-03 1973-05-18
JPS516666A (en) * 1974-07-06 1976-01-20 Handotai Kenkyu Shinkokai TANKETSUSHOHAKUMAKUSAKUSEIHOHO

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01245512A (en) * 1988-03-28 1989-09-29 Nippon Telegr & Teleph Corp <Ntt> Formation of iii-v compound semiconductor by epitaxial growth

Also Published As

Publication number Publication date
JPS5625774B2 (en) 1981-06-15

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