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JPS5528518A - Control method of magnetic bubble steady existence magnetic field for magnetic bubble memory element - Google Patents

Control method of magnetic bubble steady existence magnetic field for magnetic bubble memory element

Info

Publication number
JPS5528518A
JPS5528518A JP10017178A JP10017178A JPS5528518A JP S5528518 A JPS5528518 A JP S5528518A JP 10017178 A JP10017178 A JP 10017178A JP 10017178 A JP10017178 A JP 10017178A JP S5528518 A JPS5528518 A JP S5528518A
Authority
JP
Japan
Prior art keywords
bubble
magnetic
thermal treatment
magnetic field
magnetic bubble
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10017178A
Other languages
Japanese (ja)
Inventor
Shunsuke Matsuyama
Tomoyuki Mori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10017178A priority Critical patent/JPS5528518A/en
Publication of JPS5528518A publication Critical patent/JPS5528518A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To ensure the control for the magnetic bubble steady existence magnetic field in a simple method and thus to increase the yield by giving the thermal treatment to the chip in which the ion implanting is given to the garnet film for bubble.
CONSTITUTION: A thermal treatment of 200W500°C is given to the chip into which the ion of Ne or the like is implanted to suppress the hard bubble of the magnetic bubble element. The collapse magnetic field where the steady existence is ensured for the bubble can be controlled accurately just by controlling the temperature and time of the thermal treatment. As a result, the nondefective and usable chips can be obtained through the thermal treatment among those which are hitherto decided defective at the growing stage of the crystal for the bubble material, thus increasing the yield at the material growing stage. Furthermore, the dispersion of the collapse magnetic field can be made even between chips by controlling the temperature of the thermal treatment, and as a result the active margin of the element can be increased.
COPYRIGHT: (C)1980,JPO&Japio
JP10017178A 1978-08-17 1978-08-17 Control method of magnetic bubble steady existence magnetic field for magnetic bubble memory element Pending JPS5528518A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10017178A JPS5528518A (en) 1978-08-17 1978-08-17 Control method of magnetic bubble steady existence magnetic field for magnetic bubble memory element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10017178A JPS5528518A (en) 1978-08-17 1978-08-17 Control method of magnetic bubble steady existence magnetic field for magnetic bubble memory element

Publications (1)

Publication Number Publication Date
JPS5528518A true JPS5528518A (en) 1980-02-29

Family

ID=14266867

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10017178A Pending JPS5528518A (en) 1978-08-17 1978-08-17 Control method of magnetic bubble steady existence magnetic field for magnetic bubble memory element

Country Status (1)

Country Link
JP (1) JPS5528518A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58108085A (en) * 1981-12-18 1983-06-28 Hitachi Ltd Magnetic bubble element
JPS59227080A (en) * 1983-06-06 1984-12-20 Fujitsu Ltd Manufacture of ion implanting bubble device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58108085A (en) * 1981-12-18 1983-06-28 Hitachi Ltd Magnetic bubble element
JPS59227080A (en) * 1983-06-06 1984-12-20 Fujitsu Ltd Manufacture of ion implanting bubble device
JPS6326478B2 (en) * 1983-06-06 1988-05-30 Fujitsu Ltd

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