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JPS5527738A - Strip line type diode phase shifter - Google Patents

Strip line type diode phase shifter

Info

Publication number
JPS5527738A
JPS5527738A JP10066078A JP10066078A JPS5527738A JP S5527738 A JPS5527738 A JP S5527738A JP 10066078 A JP10066078 A JP 10066078A JP 10066078 A JP10066078 A JP 10066078A JP S5527738 A JPS5527738 A JP S5527738A
Authority
JP
Japan
Prior art keywords
line
layer substrate
case
pin diode
phase shifter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10066078A
Other languages
Japanese (ja)
Inventor
Makoto Matsunaga
Tetsushi Mizobuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP10066078A priority Critical patent/JPS5527738A/en
Publication of JPS5527738A publication Critical patent/JPS5527738A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00Auxiliary devices
    • H01P1/18Phase-shifters
    • H01P1/185Phase-shifters using a diode or a gas filled discharge tube

Landscapes

  • Waveguide Switches, Polarizers, And Phase Shifters (AREA)

Abstract

PURPOSE:To reduce both the reflection and loss of the phase shifter as well as to realize a miniature structure by omitting the DC cut of the 1/4 wavelength and then adhering the chip capacitor to the PIN diode to secure the DC bias isolating function. CONSTITUTION:Earth conductor 2 is installed on one surface of dielectric lower- layer substrate 1 to be made to touch external conductor case 3. And main line 5, hybrid 6 and PIN diode load line 8 are formed on both surfaces of middle-layer substrate 4. Conductor 2 is also provided on one surface of upper-layer substrate 13 to be connected to cover 14 of the case. One electrode of MIS-type microminiature chip capacitor 16 is adhered to the anode of PIN diode 10, and the other electrode is connected 17 to line 8. One end of coil 18 is connected to the anode of diode 10 with the other end connected to bias terminal 12, and the cathode is soldered to case 3. As a result, the electric wave coming in from main line 5 of the input side emerges at the line of the main input side through hybrid 6. In this way, the number can be decreased for the hybrids and DC cuts to pass through, thus realizing a miniature structure and at the same time reducing both the reflection and the loss.
JP10066078A 1978-08-18 1978-08-18 Strip line type diode phase shifter Pending JPS5527738A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10066078A JPS5527738A (en) 1978-08-18 1978-08-18 Strip line type diode phase shifter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10066078A JPS5527738A (en) 1978-08-18 1978-08-18 Strip line type diode phase shifter

Publications (1)

Publication Number Publication Date
JPS5527738A true JPS5527738A (en) 1980-02-28

Family

ID=14279950

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10066078A Pending JPS5527738A (en) 1978-08-18 1978-08-18 Strip line type diode phase shifter

Country Status (1)

Country Link
JP (1) JPS5527738A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0198960A2 (en) * 1985-04-16 1986-10-29 State of Israel Ministry of Defence Armament Development Authority Microwave diode phase shifter
WO2019204718A1 (en) 2018-04-19 2019-10-24 Metawave Corporation Distributed varactor network with expanded tuning range

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0198960A2 (en) * 1985-04-16 1986-10-29 State of Israel Ministry of Defence Armament Development Authority Microwave diode phase shifter
WO2019204718A1 (en) 2018-04-19 2019-10-24 Metawave Corporation Distributed varactor network with expanded tuning range
EP3782223A4 (en) * 2018-04-19 2021-06-02 Metawave Corporation Distributed varactor network with expanded tuning range

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