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JPS55160463A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
JPS55160463A
JPS55160463A JP6855379A JP6855379A JPS55160463A JP S55160463 A JPS55160463 A JP S55160463A JP 6855379 A JP6855379 A JP 6855379A JP 6855379 A JP6855379 A JP 6855379A JP S55160463 A JPS55160463 A JP S55160463A
Authority
JP
Japan
Prior art keywords
substrate
density
width
memory cell
memory device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6855379A
Other languages
Japanese (ja)
Other versions
JPS6337505B2 (en
Inventor
Yoshihiro Takemae
Fumio Baba
Tomio Nakano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP6855379A priority Critical patent/JPS55160463A/en
Publication of JPS55160463A publication Critical patent/JPS55160463A/en
Publication of JPS6337505B2 publication Critical patent/JPS6337505B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
    • H01L23/556—Protection against radiation, e.g. light or electromagnetic waves against alpha rays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Static Random-Access Memory (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To prevent occurrence of software error in a semiconductor memory device due to alpha-ray irradiation by increasing the density of the semiconductor substrate at the memory cell array section to decrease the width of the depletion layer. CONSTITUTION:When enhancing the impurity density of the semiconductor substrate 10 having an MOS capacitor MC and a transfer gate TG, the depletion layers 18, 20 are diminished in width, and the number of the electron and hold pair generated in the depletion layer is reduced due to alpharay irradiation so as to avoid the software error therein. When the entire density in the substrate 10 is however increased, a peripheral circuit is carried in addition to the memory cell on the substrate 10. Therefore, it is apprehended to alter the threshold of the transistor forming the circuit. Accordingly, it is preferred accurately to enhance only the density in the substrate at only the capacitor MC and the bit wire portion, and ion may be implanted on the entire surface at the memory array.
JP6855379A 1979-06-01 1979-06-01 Semiconductor memory device Granted JPS55160463A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6855379A JPS55160463A (en) 1979-06-01 1979-06-01 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6855379A JPS55160463A (en) 1979-06-01 1979-06-01 Semiconductor memory device

Publications (2)

Publication Number Publication Date
JPS55160463A true JPS55160463A (en) 1980-12-13
JPS6337505B2 JPS6337505B2 (en) 1988-07-26

Family

ID=13377061

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6855379A Granted JPS55160463A (en) 1979-06-01 1979-06-01 Semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS55160463A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60182761A (en) * 1984-02-29 1985-09-18 Fujitsu Ltd Semiconductor memory device
JPS61120463A (en) * 1984-11-15 1986-06-07 Mitsubishi Electric Corp Semiconductor memory device
DE3639375A1 (en) * 1985-12-16 1987-06-19 Mitsubishi Electric Corp SEMICONDUCTOR STORAGE DEVICE AND METHOD FOR THE PRODUCTION THEREOF
DE3642595A1 (en) * 1985-12-16 1987-06-19 Mitsubishi Electric Corp SEMICONDUCTOR MEMORY DEVICE
DE3639058A1 (en) * 1985-12-16 1987-06-19 Mitsubishi Electric Corp METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE
JPS6415965A (en) * 1987-07-10 1989-01-19 Toshiba Corp Semiconductor memory and manufacture thereof
US4833645A (en) * 1985-11-13 1989-05-23 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device having improved resistance to alpha particle induced soft errors
US5726475A (en) * 1987-07-10 1998-03-10 Kabushiki Kaisha Toshiba Semiconductor device having different impurity concentration wells

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60182761A (en) * 1984-02-29 1985-09-18 Fujitsu Ltd Semiconductor memory device
JPH0574229B2 (en) * 1984-02-29 1993-10-18 Fujitsu Ltd
JPS61120463A (en) * 1984-11-15 1986-06-07 Mitsubishi Electric Corp Semiconductor memory device
US4833645A (en) * 1985-11-13 1989-05-23 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device having improved resistance to alpha particle induced soft errors
US5030586A (en) * 1985-11-13 1991-07-09 Mitsubishi Denki Kabushiki Kaisha Method for manufacturing semiconductor memory device having improved resistance to α particle induced soft errors
DE3639375A1 (en) * 1985-12-16 1987-06-19 Mitsubishi Electric Corp SEMICONDUCTOR STORAGE DEVICE AND METHOD FOR THE PRODUCTION THEREOF
DE3642595A1 (en) * 1985-12-16 1987-06-19 Mitsubishi Electric Corp SEMICONDUCTOR MEMORY DEVICE
DE3639058A1 (en) * 1985-12-16 1987-06-19 Mitsubishi Electric Corp METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE
JPS6415965A (en) * 1987-07-10 1989-01-19 Toshiba Corp Semiconductor memory and manufacture thereof
US5726475A (en) * 1987-07-10 1998-03-10 Kabushiki Kaisha Toshiba Semiconductor device having different impurity concentration wells

Also Published As

Publication number Publication date
JPS6337505B2 (en) 1988-07-26

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