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JPS55160400A - Aging method of random access memory - Google Patents

Aging method of random access memory

Info

Publication number
JPS55160400A
JPS55160400A JP6826279A JP6826279A JPS55160400A JP S55160400 A JPS55160400 A JP S55160400A JP 6826279 A JP6826279 A JP 6826279A JP 6826279 A JP6826279 A JP 6826279A JP S55160400 A JPS55160400 A JP S55160400A
Authority
JP
Japan
Prior art keywords
generated
defective
memory cells
random access
access memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6826279A
Other languages
Japanese (ja)
Inventor
Heihachi Matsumoto
Kokichi Sawada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP6826279A priority Critical patent/JPS55160400A/en
Publication of JPS55160400A publication Critical patent/JPS55160400A/en
Pending legal-status Critical Current

Links

Landscapes

  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)

Abstract

PURPOSE: To make it possible to find a software fault due to α particles in a short time by writing the same contents in all memory cells and by reading them continuously.
CONSTITUTION: To start a test, "1" is written in all memory cells and the continuous read operation of reading "1" in all memory cells is started. When a defective is generated, the defective data is output to a data output unit and the write operation of writing "1" is restarted. On the other hand, when no defect is generated, the read operation is continued until a defective is generated. Thus, the contents of memory cells are all read out continuously, unitl a defective is generated, by setting a state in which the softward fault due to a particles occurs, so that the fault can be found in a short time.
COPYRIGHT: (C)1980,JPO&Japio
JP6826279A 1979-05-31 1979-05-31 Aging method of random access memory Pending JPS55160400A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6826279A JPS55160400A (en) 1979-05-31 1979-05-31 Aging method of random access memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6826279A JPS55160400A (en) 1979-05-31 1979-05-31 Aging method of random access memory

Publications (1)

Publication Number Publication Date
JPS55160400A true JPS55160400A (en) 1980-12-13

Family

ID=13368655

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6826279A Pending JPS55160400A (en) 1979-05-31 1979-05-31 Aging method of random access memory

Country Status (1)

Country Link
JP (1) JPS55160400A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4553225A (en) * 1981-09-26 1985-11-12 Fujitsu Limited Method of testing IC memories

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4553225A (en) * 1981-09-26 1985-11-12 Fujitsu Limited Method of testing IC memories

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