JPS55157231A - Method of forming pattern by electron beam - Google Patents
Method of forming pattern by electron beamInfo
- Publication number
- JPS55157231A JPS55157231A JP6547379A JP6547379A JPS55157231A JP S55157231 A JPS55157231 A JP S55157231A JP 6547379 A JP6547379 A JP 6547379A JP 6547379 A JP6547379 A JP 6547379A JP S55157231 A JPS55157231 A JP S55157231A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- electron beam
- displacement
- circuit
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000010894 electron beam technology Methods 0.000 title abstract 5
- 238000000034 method Methods 0.000 title abstract 2
- 238000006073 displacement reaction Methods 0.000 abstract 4
- 238000001514 detection method Methods 0.000 abstract 1
- 238000003780 insertion Methods 0.000 abstract 1
- 230000037431 insertion Effects 0.000 abstract 1
- 230000001678 irradiating effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electron Beam Exposure (AREA)
Abstract
PURPOSE:To improve the superimposing accuracy of an electron beam to a pattern in a method of forming a pattern with an electron beam drawn to correct the displacement of the position thereof due to the warpage of a wafer by determining the electron beam irradiating position in response to the shape of the warpage of the wafer. CONSTITUTION:The displacement of the position of te entire wafer is obtained by an internal insertion approximate circuit 10 using a position mark detection signal 8 and a wafer warpage shape function 9 from the wafer. The displacement signal from the circuit 10 is applied to an electron beam rotation correcting circuit 11 and a stage movement correcting circuit 12 to correct the displacement of the position of the wafer and the correction signals from the circuits 11 and 12 are applied to a direct drawing circuit 13, which thus forms a pattern.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6547379A JPS55157231A (en) | 1979-05-25 | 1979-05-25 | Method of forming pattern by electron beam |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6547379A JPS55157231A (en) | 1979-05-25 | 1979-05-25 | Method of forming pattern by electron beam |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55157231A true JPS55157231A (en) | 1980-12-06 |
| JPH0121616B2 JPH0121616B2 (en) | 1989-04-21 |
Family
ID=13288105
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6547379A Granted JPS55157231A (en) | 1979-05-25 | 1979-05-25 | Method of forming pattern by electron beam |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55157231A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62159425A (en) * | 1986-01-08 | 1987-07-15 | Toshiba Mach Co Ltd | Charged beam lithography |
| KR100319898B1 (en) * | 2000-03-20 | 2002-01-10 | 윤종용 | Method and apparatus for measuring the dimensional parameter of wafer |
| KR100461024B1 (en) * | 2002-04-15 | 2004-12-13 | 주식회사 이오테크닉스 | Chip-scale marker and marking method |
-
1979
- 1979-05-25 JP JP6547379A patent/JPS55157231A/en active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62159425A (en) * | 1986-01-08 | 1987-07-15 | Toshiba Mach Co Ltd | Charged beam lithography |
| KR100319898B1 (en) * | 2000-03-20 | 2002-01-10 | 윤종용 | Method and apparatus for measuring the dimensional parameter of wafer |
| KR100461024B1 (en) * | 2002-04-15 | 2004-12-13 | 주식회사 이오테크닉스 | Chip-scale marker and marking method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0121616B2 (en) | 1989-04-21 |
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