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JPS55150266A - Method of fabricating thick film integrated circuit with thick film capacitor - Google Patents

Method of fabricating thick film integrated circuit with thick film capacitor

Info

Publication number
JPS55150266A
JPS55150266A JP5709779A JP5709779A JPS55150266A JP S55150266 A JPS55150266 A JP S55150266A JP 5709779 A JP5709779 A JP 5709779A JP 5709779 A JP5709779 A JP 5709779A JP S55150266 A JPS55150266 A JP S55150266A
Authority
JP
Japan
Prior art keywords
thick film
calcined
approx
10min
paste
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5709779A
Other languages
Japanese (ja)
Inventor
Hiroshi Otsu
Takao Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP5709779A priority Critical patent/JPS55150266A/en
Publication of JPS55150266A publication Critical patent/JPS55150266A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/702—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof of thick-or thin-film circuits or parts thereof
    • H01L21/705—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof of thick-or thin-film circuits or parts thereof of thick-film circuits or parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Ceramic Capacitors (AREA)

Abstract

PURPOSE:To obtain a thick film integrated circuit having highly reliable thick film capacity by selecting the melting point of second protective glass in the resistor calcining temperature range, calcining it twice and calcining simultaneously the resistor in the second calcining step. CONSTITUTION:A Pd-Ag paste is printed on an alumina ceramic substrate, is calcined at approx. 920 deg.C for 10min to form a lower layer electrode, BaTiO3 paste printing and drying are executed twice to form a dielectric substance, Pd-Ag paste is printed and calcined at approx. 920 deg.C for 10min to form electrodes. Then, first crystalline protective glass printing and drying are executed twice and calcined at approx. 920 deg.C for 10min. Then, second amorphous protective glass printing and drying are executed twice and calcined at approx. 830 deg.C for 10min to discharge gas in the air gap in the dielectric substance, and subsequently RuO2 resistance paste is printed and dried and calcined at approx. 830 deg.C for 10min. In this treatments the air bubbles and holes in the second protective glass are reduced to form no bubble dense layer therein. Thus, highly reliable thick film integrated circuit may be obtained.
JP5709779A 1979-05-11 1979-05-11 Method of fabricating thick film integrated circuit with thick film capacitor Pending JPS55150266A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5709779A JPS55150266A (en) 1979-05-11 1979-05-11 Method of fabricating thick film integrated circuit with thick film capacitor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5709779A JPS55150266A (en) 1979-05-11 1979-05-11 Method of fabricating thick film integrated circuit with thick film capacitor

Publications (1)

Publication Number Publication Date
JPS55150266A true JPS55150266A (en) 1980-11-22

Family

ID=13045995

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5709779A Pending JPS55150266A (en) 1979-05-11 1979-05-11 Method of fabricating thick film integrated circuit with thick film capacitor

Country Status (1)

Country Link
JP (1) JPS55150266A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53145056A (en) * 1977-05-23 1978-12-16 Hitachi Ltd Bothhside glass coated thick film substrate and method of producing same
JPS5411471A (en) * 1977-06-29 1979-01-27 Tokyo Shibaura Electric Co Wiring board

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53145056A (en) * 1977-05-23 1978-12-16 Hitachi Ltd Bothhside glass coated thick film substrate and method of producing same
JPS5411471A (en) * 1977-06-29 1979-01-27 Tokyo Shibaura Electric Co Wiring board

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