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JPS55148477A - Fabricating method of light emitting diode - Google Patents

Fabricating method of light emitting diode

Info

Publication number
JPS55148477A
JPS55148477A JP5655879A JP5655879A JPS55148477A JP S55148477 A JPS55148477 A JP S55148477A JP 5655879 A JP5655879 A JP 5655879A JP 5655879 A JP5655879 A JP 5655879A JP S55148477 A JPS55148477 A JP S55148477A
Authority
JP
Japan
Prior art keywords
light emitting
layers
substrate
layer
epitaxial
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5655879A
Other languages
Japanese (ja)
Inventor
Toshitake Nakada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP5655879A priority Critical patent/JPS55148477A/en
Publication of JPS55148477A publication Critical patent/JPS55148477A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components

Landscapes

  • Led Devices (AREA)

Abstract

PURPOSE:To form a plurality of light emitting units on the same substrate by forming an epitaxial layer on a gallium arsenide or gallium phosphide substrate, removing partially the epitaxial layer and forming a conducting type layer. CONSTITUTION:One conducting type epitaxial layer 2 of the same type as a gallium arsenide or gallium phosphide substrate 1 is formed on the substrate 1 by a vapor phase growing process, and a plurality of gallium arsenide phosphide epitaxial layers 3, 4 having different composition ratio of the arsenic and phosphorus are laminated on the layer 2 by a vapor phase growing process. Then, the laminated epitaxial layers 3, 4 are partially removed, and other conducting type layers 7, 6 are formed on the exposed layers 2, 4 to form a plurality of light emitting units.
JP5655879A 1979-05-08 1979-05-08 Fabricating method of light emitting diode Pending JPS55148477A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5655879A JPS55148477A (en) 1979-05-08 1979-05-08 Fabricating method of light emitting diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5655879A JPS55148477A (en) 1979-05-08 1979-05-08 Fabricating method of light emitting diode

Publications (1)

Publication Number Publication Date
JPS55148477A true JPS55148477A (en) 1980-11-19

Family

ID=13030437

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5655879A Pending JPS55148477A (en) 1979-05-08 1979-05-08 Fabricating method of light emitting diode

Country Status (1)

Country Link
JP (1) JPS55148477A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60202971A (en) * 1984-03-27 1985-10-14 Mitsubishi Electric Corp Semiconductor light emitting device
FR2605801A1 (en) * 1986-10-23 1988-04-29 Menigaux Louis METHOD FOR MANUFACTURING A SEMICONDUCTOR STRUCTURE CAPABLE OF MULTI-WAVELENGTH LENGTH, AND DEVICE OBTAINED
WO2004038801A2 (en) * 2002-10-22 2004-05-06 Cree, Inc. Light emitting diode assembly for ac operation and methods of fabricating same
US6888167B2 (en) 2001-07-23 2005-05-03 Cree, Inc. Flip-chip bonding of light emitting devices and light emitting devices suitable for flip-chip bonding
JP2007251209A (en) * 2007-06-18 2007-09-27 Toshiba Corp Light-emitting device
JP2019516251A (en) * 2016-05-04 2019-06-13 グロ アーベーＧｌｏ Ａｂ Monolithic multicolor direct view display comprising LEDs of different colors and method of manufacturing the same

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60202971A (en) * 1984-03-27 1985-10-14 Mitsubishi Electric Corp Semiconductor light emitting device
FR2605801A1 (en) * 1986-10-23 1988-04-29 Menigaux Louis METHOD FOR MANUFACTURING A SEMICONDUCTOR STRUCTURE CAPABLE OF MULTI-WAVELENGTH LENGTH, AND DEVICE OBTAINED
US6888167B2 (en) 2001-07-23 2005-05-03 Cree, Inc. Flip-chip bonding of light emitting devices and light emitting devices suitable for flip-chip bonding
US7259033B2 (en) 2001-07-23 2007-08-21 Cree, Inc. Flip-chip bonding of light emitting devices
US7608860B2 (en) 2001-07-23 2009-10-27 Cree, Inc. Light emitting devices suitable for flip-chip bonding
WO2004038801A2 (en) * 2002-10-22 2004-05-06 Cree, Inc. Light emitting diode assembly for ac operation and methods of fabricating same
WO2004038801A3 (en) * 2002-10-22 2004-10-07 Cree Inc Light emitting diode assembly for ac operation and methods of fabricating same
US7009199B2 (en) 2002-10-22 2006-03-07 Cree, Inc. Electronic devices having a header and antiparallel connected light emitting diodes for producing light from AC current
JP2007251209A (en) * 2007-06-18 2007-09-27 Toshiba Corp Light-emitting device
JP2019516251A (en) * 2016-05-04 2019-06-13 グロ アーベーＧｌｏ Ａｂ Monolithic multicolor direct view display comprising LEDs of different colors and method of manufacturing the same

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