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JPS55146959A - Semiconductor device having silicon nitride film and integrated circuit using the same - Google Patents

Semiconductor device having silicon nitride film and integrated circuit using the same

Info

Publication number
JPS55146959A
JPS55146959A JP5345479A JP5345479A JPS55146959A JP S55146959 A JPS55146959 A JP S55146959A JP 5345479 A JP5345479 A JP 5345479A JP 5345479 A JP5345479 A JP 5345479A JP S55146959 A JPS55146959 A JP S55146959A
Authority
JP
Japan
Prior art keywords
film
si3n4
semiconductor device
sio2
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5345479A
Other languages
Japanese (ja)
Other versions
JPH0454395B2 (en
Inventor
Yutaka Hayashi
Hidekazu Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP5345479A priority Critical patent/JPS55146959A/en
Publication of JPS55146959A publication Critical patent/JPS55146959A/en
Publication of JPH0454395B2 publication Critical patent/JPH0454395B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers

Landscapes

  • Bipolar Transistors (AREA)
  • Thyristors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Formation Of Insulating Films (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Non-Volatile Memory (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To obtain a current control type negative resistance, switching function, photo-switch characteristic and so forth, by providing a semiconductor device of the type having opposite electrodes formed on a semiconductor substrate through an insulating film, wherein the insulating film is composed of an Si3N4 film or a double-layered film including the Si3N4 film and an SiO2 film. CONSTITUTION:An Al evaporation film 10 as an opposing region is formed through a medium of an insulating film 1 on a semiconductor substrate 100 of n- type made of Si, GaP, InP, GaAs or the like material. A predetermined potential is applied between the substrate 100 and the film 10. In this structure, the film 1 is an SiO2 film having a thickness of 30Angstrom or so or a double layer of the SiO2 film and an Si3N4 film of 20-150Angstrom thick superposed to the latter. This arrangement permits an abrupt change of current flowing through the device, from cut-off state to conductive state, by a suitable control of the voltage applied to the device, so that a good switching function is obtained.
JP5345479A 1979-05-02 1979-05-02 Semiconductor device having silicon nitride film and integrated circuit using the same Granted JPS55146959A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5345479A JPS55146959A (en) 1979-05-02 1979-05-02 Semiconductor device having silicon nitride film and integrated circuit using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5345479A JPS55146959A (en) 1979-05-02 1979-05-02 Semiconductor device having silicon nitride film and integrated circuit using the same

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP63217955A Division JPH01117369A (en) 1988-08-31 1988-08-31 Semiconductor device provided with silicon nitride film

Publications (2)

Publication Number Publication Date
JPS55146959A true JPS55146959A (en) 1980-11-15
JPH0454395B2 JPH0454395B2 (en) 1992-08-31

Family

ID=12943297

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5345479A Granted JPS55146959A (en) 1979-05-02 1979-05-02 Semiconductor device having silicon nitride film and integrated circuit using the same

Country Status (1)

Country Link
JP (1) JPS55146959A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58168275A (en) * 1982-03-29 1983-10-04 Fujitsu Ltd semiconductor equipment
JPH01117369A (en) * 1988-08-31 1989-05-10 Agency Of Ind Science & Technol Semiconductor device provided with silicon nitride film
EP0512717A2 (en) * 1991-05-02 1992-11-11 Dow Corning Corporation Threshold switching device with negative differential resistance

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49131391A (en) * 1973-04-19 1974-12-17
JPS5115396A (en) * 1974-07-30 1976-02-06 Hochiki Co KEIHOSHISUTEMU
JPS5234678A (en) * 1975-06-18 1977-03-16 Sperry Rand Corp Multiiterminal inversion controlled semiconductor device
JPS54156486A (en) * 1978-05-31 1979-12-10 Toshiba Corp Negative resistance element

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49131391A (en) * 1973-04-19 1974-12-17
JPS5115396A (en) * 1974-07-30 1976-02-06 Hochiki Co KEIHOSHISUTEMU
JPS5234678A (en) * 1975-06-18 1977-03-16 Sperry Rand Corp Multiiterminal inversion controlled semiconductor device
JPS54156486A (en) * 1978-05-31 1979-12-10 Toshiba Corp Negative resistance element

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58168275A (en) * 1982-03-29 1983-10-04 Fujitsu Ltd semiconductor equipment
JPH01117369A (en) * 1988-08-31 1989-05-10 Agency Of Ind Science & Technol Semiconductor device provided with silicon nitride film
JPH0550148B2 (en) * 1988-08-31 1993-07-28 Kogyo Gijutsuin
EP0512717A2 (en) * 1991-05-02 1992-11-11 Dow Corning Corporation Threshold switching device with negative differential resistance

Also Published As

Publication number Publication date
JPH0454395B2 (en) 1992-08-31

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