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JPS55132045A - Nitride film forming method - Google Patents

Nitride film forming method

Info

Publication number
JPS55132045A
JPS55132045A JP3966579A JP3966579A JPS55132045A JP S55132045 A JPS55132045 A JP S55132045A JP 3966579 A JP3966579 A JP 3966579A JP 3966579 A JP3966579 A JP 3966579A JP S55132045 A JPS55132045 A JP S55132045A
Authority
JP
Japan
Prior art keywords
substrate
film
laser beam
irradiated
nitride film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3966579A
Other languages
Japanese (ja)
Inventor
Katsuhiro Tsukamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP3966579A priority Critical patent/JPS55132045A/en
Publication of JPS55132045A publication Critical patent/JPS55132045A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Solid-Phase Diffusion Into Metallic Material Surfaces (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To obtain such film as is free from accumulation of impurities on the surface and also from abnormal field by a method wherein high energy and high output of laser beam is irradiated to the surface of a semiconductor or metal substrate in an N2 atmosphere, and the fused substrate surface is made reactive with N2 to produce a nitride film. CONSTITUTION:A laser beam 2 from a laser oscillator 1 is irradiated to the surface of an Si substrate 4 placed on a mount 5 through an optical system 3 consisting of a concave mirror 31, concave lens 32 and a convex lens 33. In this case, the laser beam 2 uses a high energy and high output of beam of several joules/cm<2>, which fuses the surface of the substrate 4 in an instant. Then, this operation is carried out in an N2 atmosphere to make the fused Si react with N2, thereby producing an Si3N4 film only on the part irradiated. The surface of the substrate 4 and the Si3N4 film is free from accumulation of impurities or abnormal development of the surface field, thus obtaining a superior film.
JP3966579A 1979-04-02 1979-04-02 Nitride film forming method Pending JPS55132045A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3966579A JPS55132045A (en) 1979-04-02 1979-04-02 Nitride film forming method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3966579A JPS55132045A (en) 1979-04-02 1979-04-02 Nitride film forming method

Publications (1)

Publication Number Publication Date
JPS55132045A true JPS55132045A (en) 1980-10-14

Family

ID=12559373

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3966579A Pending JPS55132045A (en) 1979-04-02 1979-04-02 Nitride film forming method

Country Status (1)

Country Link
JP (1) JPS55132045A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57198259A (en) * 1981-05-28 1982-12-04 Toshiba Corp Surface treatment of titanium or titanium alloy
JPS5835929A (en) * 1981-08-28 1983-03-02 Fujitsu Ltd Manufacture of semiconductor device
JPS60216560A (en) * 1984-04-12 1985-10-30 Fuji Electric Corp Res & Dev Ltd Formation of nitride film
JPS62142757A (en) * 1985-12-17 1987-06-26 Seiko Instr & Electronics Ltd Decorative article
JP2012046341A (en) * 2010-08-30 2012-03-08 Nec Infrontia Corp Printer

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5199980A (en) * 1975-02-28 1976-09-03 Fujitsu Ltd mis gatahandotaisochi
JPS5235596A (en) * 1975-09-12 1977-03-18 Hitachi Ltd Burglar watch system

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5199980A (en) * 1975-02-28 1976-09-03 Fujitsu Ltd mis gatahandotaisochi
JPS5235596A (en) * 1975-09-12 1977-03-18 Hitachi Ltd Burglar watch system

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57198259A (en) * 1981-05-28 1982-12-04 Toshiba Corp Surface treatment of titanium or titanium alloy
JPS5835929A (en) * 1981-08-28 1983-03-02 Fujitsu Ltd Manufacture of semiconductor device
JPS60216560A (en) * 1984-04-12 1985-10-30 Fuji Electric Corp Res & Dev Ltd Formation of nitride film
JPS62142757A (en) * 1985-12-17 1987-06-26 Seiko Instr & Electronics Ltd Decorative article
JP2012046341A (en) * 2010-08-30 2012-03-08 Nec Infrontia Corp Printer
TWI472435B (en) * 2010-08-30 2015-02-11 Nec Infrontia Corp Printer that prevents paper jam

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