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JPS55129342A - Producing positive type light sensitive resin structure having no interference effect - Google Patents

Producing positive type light sensitive resin structure having no interference effect

Info

Publication number
JPS55129342A
JPS55129342A JP3734480A JP3734480A JPS55129342A JP S55129342 A JPS55129342 A JP S55129342A JP 3734480 A JP3734480 A JP 3734480A JP 3734480 A JP3734480 A JP 3734480A JP S55129342 A JPS55129342 A JP S55129342A
Authority
JP
Japan
Prior art keywords
type light
light sensitive
sensitive resin
positive type
interference effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3734480A
Other languages
Japanese (ja)
Inventor
Uidoman Deiitoritsuhi
Bindaa Hansu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of JPS55129342A publication Critical patent/JPS55129342A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/092—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by backside coating or layers, by lubricating-slip layers or means, by oxygen barrier layers or by stripping-release layers or means

Landscapes

  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Laminated Bodies (AREA)
JP3734480A 1979-03-23 1980-03-24 Producing positive type light sensitive resin structure having no interference effect Pending JPS55129342A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19792911503 DE2911503A1 (en) 1979-03-23 1979-03-23 METHOD FOR PRODUCING STRUCTURES FROM POSITIVE PHOTO PAINT LAYERS WITHOUT INTERFERING INTERFERENCE EFFECTS

Publications (1)

Publication Number Publication Date
JPS55129342A true JPS55129342A (en) 1980-10-07

Family

ID=6066260

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3734480A Pending JPS55129342A (en) 1979-03-23 1980-03-24 Producing positive type light sensitive resin structure having no interference effect

Country Status (4)

Country Link
JP (1) JPS55129342A (en)
DE (1) DE2911503A1 (en)
FR (1) FR2452118A1 (en)
GB (1) GB2046463A (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR840006728A (en) * 1982-11-01 1984-12-01 오레그 이. 엘버 Integrated circuit manufacturing method
JPS6038821A (en) * 1983-08-12 1985-02-28 Hitachi Ltd Etching method
DE69214035T2 (en) * 1991-06-28 1997-04-10 Ibm Anti-reflective coatings
DE19852852A1 (en) * 1998-11-11 2000-05-18 Inst Halbleiterphysik Gmbh Lithographic process used in emitter structuring of bipolar transistors comprises forming photo-lacquer layer on antireflection layer on substrate and etching
EP4493402A2 (en) * 2022-03-16 2025-01-22 Amcor Flexibles North America, Inc. Film structures having improved optical properties

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1622302A1 (en) * 1968-02-01 1970-10-29 Telefunken Patent Process for the photographic transfer of structures onto semiconductor bodies
US3884698A (en) * 1972-08-23 1975-05-20 Hewlett Packard Co Method for achieving uniform exposure in a photosensitive material on a semiconductor wafer
US3982943A (en) * 1974-03-05 1976-09-28 Ibm Corporation Lift-off method of fabricating thin films and a structure utilizable as a lift-off mask

Also Published As

Publication number Publication date
DE2911503A1 (en) 1980-09-25
GB2046463A (en) 1980-11-12
FR2452118A1 (en) 1980-10-17

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