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JPS55128851A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
JPS55128851A
JPS55128851A JP3548079A JP3548079A JPS55128851A JP S55128851 A JPS55128851 A JP S55128851A JP 3548079 A JP3548079 A JP 3548079A JP 3548079 A JP3548079 A JP 3548079A JP S55128851 A JPS55128851 A JP S55128851A
Authority
JP
Japan
Prior art keywords
film
coated
memory circuit
perforated
heat treated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3548079A
Other languages
Japanese (ja)
Other versions
JPS6228584B2 (en
Inventor
Tatsumi Shirasu
Yasunobu Osa
Tokio Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP3548079A priority Critical patent/JPS55128851A/en
Publication of JPS55128851A publication Critical patent/JPS55128851A/en
Publication of JPS6228584B2 publication Critical patent/JPS6228584B2/ja
Priority to JP21832688A priority patent/JPS6477148A/en
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73253—Bump and layer connectors

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE: To eliminate an erroneous operation of a memory circuit owing to alpha rays even when using a ceramic package as a sealing body by protecting a semiconductor substrate provided with the memory circuit thereon using polyimide resin.
CONSTITUTION: An n-type region 20 becoming part of a memory circuit is diffused on the surface of a p-type silicon substrate 1, and a SiO2 film 21' is coated on the entire surface thereof. An opening is then perforated at the film 21' on the region 20, a wire conductor layer 21" is coated through the opening thereon, a polyimide- isoindolo-quinazolinedione resion film 23 is coated on the entire surface by a spin-on process and heat treated to semi-harden it. Thereafter, it is photoetched using a hydrazine solution, a bonding pad portion 22 is perforated at the film 23, heat treated, and completely hardened. A bonding wire 24 is then mounted at the portion 22, and this element is sealed in a ceramic package. Thus, alpha particles flown from package material are absorbed to the film 23 to prevent the erroreous operation of the circuit.
COPYRIGHT: (C)1980,JPO&Japio
JP3548079A 1979-03-28 1979-03-28 Semiconductor memory device Granted JPS55128851A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP3548079A JPS55128851A (en) 1979-03-28 1979-03-28 Semiconductor memory device
JP21832688A JPS6477148A (en) 1979-03-28 1988-09-02 Semiconductor storage device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3548079A JPS55128851A (en) 1979-03-28 1979-03-28 Semiconductor memory device

Related Child Applications (3)

Application Number Title Priority Date Filing Date
JP62012333A Division JPS62181453A (en) 1987-01-23 1987-01-23 Semiconductor memory device
JP1233487A Division JPS62174929A (en) 1987-01-23 1987-01-23 Manufacture of semiconductor memory device
JP63218325A Division JPH01132143A (en) 1988-09-02 1988-09-02 Manufacture of semiconductor storage device

Publications (2)

Publication Number Publication Date
JPS55128851A true JPS55128851A (en) 1980-10-06
JPS6228584B2 JPS6228584B2 (en) 1987-06-22

Family

ID=12442917

Family Applications (2)

Application Number Title Priority Date Filing Date
JP3548079A Granted JPS55128851A (en) 1979-03-28 1979-03-28 Semiconductor memory device
JP21832688A Granted JPS6477148A (en) 1979-03-28 1988-09-02 Semiconductor storage device

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP21832688A Granted JPS6477148A (en) 1979-03-28 1988-09-02 Semiconductor storage device

Country Status (1)

Country Link
JP (2) JPS55128851A (en)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55140249A (en) * 1979-04-18 1980-11-01 Fujitsu Ltd Semiconductor device
JPS5630746A (en) * 1979-08-22 1981-03-27 Fujitsu Ltd Semiconductor device
JPS5776868A (en) * 1980-10-30 1982-05-14 Fujitsu Ltd Forming method for resin protected film
JPS584954A (en) * 1981-06-30 1983-01-12 Hitachi Ltd Resin-encapsulated semiconductor memory device
JPS589345A (en) * 1981-06-26 1983-01-19 シ−メンス・アクチエンゲゼルシヤフト How to fabricate semiconductor devices on a semiconductor board
JPS5816553A (en) * 1981-07-22 1983-01-31 Mitsubishi Electric Corp Semiconductor device and manufacture thereof
JPS58147048A (en) * 1982-02-25 1983-09-01 Fujitsu Ltd Manufacturing method of semiconductor device
JPS58223352A (en) * 1982-06-21 1983-12-24 Matsushita Electric Ind Co Ltd Semiconductor device
US4468411A (en) * 1982-04-05 1984-08-28 Motorola, Inc. Method for providing alpha particle protection for an integrated circuit die
US4481526A (en) * 1980-06-17 1984-11-06 Fujitsu Limited Semiconductor device
US4653175A (en) * 1984-02-09 1987-03-31 Fairchild Semiconductor Corporation Semiconductor structure having alpha particle resistant film and method of making the same
JPS62204575A (en) * 1986-03-05 1987-09-09 Matsushita Electric Ind Co Ltd Thin film semiconductor device and manufacture thereof
US7382043B2 (en) * 2002-09-25 2008-06-03 Maxwell Technologies, Inc. Method and apparatus for shielding an integrated circuit from radiation
US7696610B2 (en) 2003-07-16 2010-04-13 Maxwell Technologies, Inc. Apparatus for shielding integrated circuit devices

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5264726A (en) * 1989-07-21 1993-11-23 Nec Corporation Chip-carrier
FR2650121B1 (en) * 1989-07-21 1997-07-25 Nec Corp ELECTRONIC CHIP SUPPORT

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53142375A (en) * 1977-05-18 1978-12-12 Babcock Hitachi Kk Rotary kiln

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5166776A (en) * 1974-12-06 1976-06-09 Hitachi Ltd KOSHUHAHANDOTAISOCHI OYOBI SONOSEI ZOHOHO
JPS5226989A (en) * 1975-08-22 1977-02-28 Chiyoda Shigyo Kk Paper bag trnsferring method for heavy packaging paper sewing machine

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53142375A (en) * 1977-05-18 1978-12-12 Babcock Hitachi Kk Rotary kiln

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55140249A (en) * 1979-04-18 1980-11-01 Fujitsu Ltd Semiconductor device
JPS5630746A (en) * 1979-08-22 1981-03-27 Fujitsu Ltd Semiconductor device
US4481526A (en) * 1980-06-17 1984-11-06 Fujitsu Limited Semiconductor device
JPS5776868A (en) * 1980-10-30 1982-05-14 Fujitsu Ltd Forming method for resin protected film
JPS589345A (en) * 1981-06-26 1983-01-19 シ−メンス・アクチエンゲゼルシヤフト How to fabricate semiconductor devices on a semiconductor board
JPS584954A (en) * 1981-06-30 1983-01-12 Hitachi Ltd Resin-encapsulated semiconductor memory device
JPS5816553A (en) * 1981-07-22 1983-01-31 Mitsubishi Electric Corp Semiconductor device and manufacture thereof
JPS58147048A (en) * 1982-02-25 1983-09-01 Fujitsu Ltd Manufacturing method of semiconductor device
US4468411A (en) * 1982-04-05 1984-08-28 Motorola, Inc. Method for providing alpha particle protection for an integrated circuit die
JPS58223352A (en) * 1982-06-21 1983-12-24 Matsushita Electric Ind Co Ltd Semiconductor device
US4653175A (en) * 1984-02-09 1987-03-31 Fairchild Semiconductor Corporation Semiconductor structure having alpha particle resistant film and method of making the same
JPS62204575A (en) * 1986-03-05 1987-09-09 Matsushita Electric Ind Co Ltd Thin film semiconductor device and manufacture thereof
US7382043B2 (en) * 2002-09-25 2008-06-03 Maxwell Technologies, Inc. Method and apparatus for shielding an integrated circuit from radiation
US7696610B2 (en) 2003-07-16 2010-04-13 Maxwell Technologies, Inc. Apparatus for shielding integrated circuit devices

Also Published As

Publication number Publication date
JPS6228584B2 (en) 1987-06-22
JPH0546101B2 (en) 1993-07-13
JPS6477148A (en) 1989-03-23

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