JPS55121711A - Parametric mixer using variable capacity diode - Google Patents
Parametric mixer using variable capacity diodeInfo
- Publication number
- JPS55121711A JPS55121711A JP2854179A JP2854179A JPS55121711A JP S55121711 A JPS55121711 A JP S55121711A JP 2854179 A JP2854179 A JP 2854179A JP 2854179 A JP2854179 A JP 2854179A JP S55121711 A JPS55121711 A JP S55121711A
- Authority
- JP
- Japan
- Prior art keywords
- capacity
- control
- electrode
- depletion layer
- reading
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/14—Balanced arrangements
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Superheterodyne Receivers (AREA)
Abstract
PURPOSE:To facilitate the easy designing of the FM receiver by using the variable capacity diode possessing the several electrode structures of both the depletion layer control part containing the control electrode which gives the control to the width of the depletion layer and the capacity reading part containing the reading electrode which fetches the capacity variation each. CONSTITUTION:The parametric mixer is formed with use of the variable capacity diode possessing several electrode structures of depletion control parts 13 and 14 plus capacity reading part 12. With appeication of input signal VS (reception frequency f1) and local oscillation signal voltage VP (local oscillation frequency f2) to the depletion layer part and the capacity reading part respectively, the mixing of f2=f1+ f3 or f2=f1-f3 is carried out in relation to output signal voltage VO (intermediate frequency f3). This is due to the following fact: the width of the depletion layer caused under part 12 is varied by giving the adverse bias to parts 13 and 14 via the control electrode each, and accordingly the capacity change can be fetched via the capacity reading electrode.
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2854179A JPS55121711A (en) | 1979-03-12 | 1979-03-12 | Parametric mixer using variable capacity diode |
GB8006508A GB2060250B (en) | 1979-03-12 | 1980-02-26 | Controllable semiconductor capacitors |
AU55900/80A AU535235B2 (en) | 1979-03-12 | 1980-02-26 | Semiconductor device |
SE8001862A SE8001862L (en) | 1979-03-12 | 1980-03-10 | SEMICONDUCTOR DEVICE WITH MULTI-ELECTRODE CONSTRUCTION EQUIVALENT WITH A VARIABLE CAPACITANCE DIODE |
NLAANVRAGE8001451,A NL186283C (en) | 1979-03-12 | 1980-03-11 | Semiconductor device operable as an adjustable capacity. |
DE19803009499 DE3009499A1 (en) | 1979-03-12 | 1980-03-12 | SEMICONDUCTOR DEVICE |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2854179A JPS55121711A (en) | 1979-03-12 | 1979-03-12 | Parametric mixer using variable capacity diode |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55121711A true JPS55121711A (en) | 1980-09-19 |
Family
ID=12251516
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2854179A Pending JPS55121711A (en) | 1979-03-12 | 1979-03-12 | Parametric mixer using variable capacity diode |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55121711A (en) |
-
1979
- 1979-03-12 JP JP2854179A patent/JPS55121711A/en active Pending
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