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JPS55118631A - Diffusion furnace for treatment of semiconductor wafer - Google Patents

Diffusion furnace for treatment of semiconductor wafer

Info

Publication number
JPS55118631A
JPS55118631A JP2561579A JP2561579A JPS55118631A JP S55118631 A JPS55118631 A JP S55118631A JP 2561579 A JP2561579 A JP 2561579A JP 2561579 A JP2561579 A JP 2561579A JP S55118631 A JPS55118631 A JP S55118631A
Authority
JP
Japan
Prior art keywords
holder
wafer
heat treatment
diffusion furnace
quartz
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2561579A
Other languages
Japanese (ja)
Other versions
JPS6250970B2 (en
Inventor
Hiroyuki Ino
Mikio Takagi
Haruo Shimoda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP2561579A priority Critical patent/JPS55118631A/en
Publication of JPS55118631A publication Critical patent/JPS55118631A/en
Publication of JPS6250970B2 publication Critical patent/JPS6250970B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation

Landscapes

  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Furnace Charging Or Discharging (AREA)

Abstract

PURPOSE:To prevent the deformation and the generation of surface crystal defect of a wafer during heat treatment by a method wherein a holder in the diffusion furnace is constructed of horizontal holder plates of prural stage which supports a wafer by the major part of the back surface. CONSTITUTION:A holder 5 which is made of material of large heat capacity such as quartz, carbon silicate, or the like, and has an outer frame 9 that supports holizontal holder plate 8 that supports semiconductor wafer 6 by all back surface or by necessary back surface to prevent a wafer from its deformation in the period of heat treatment is installed in a diffusion furnace which has a holder supporter 4 which can move up and down and is placed beneath a quartz reactor case 2 which has a heating device 3 outside it. Heat treatment is performed after fitting and closing a holder support 4 and base 1. By utilizing such diffusion furnace, freedom from frictional contact between quartz reactor case and holder eliminates possible scattering of quartz fragment, and wafer's deformation during heat treatment or crystal defect is eliminated.
JP2561579A 1979-03-07 1979-03-07 Diffusion furnace for treatment of semiconductor wafer Granted JPS55118631A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2561579A JPS55118631A (en) 1979-03-07 1979-03-07 Diffusion furnace for treatment of semiconductor wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2561579A JPS55118631A (en) 1979-03-07 1979-03-07 Diffusion furnace for treatment of semiconductor wafer

Publications (2)

Publication Number Publication Date
JPS55118631A true JPS55118631A (en) 1980-09-11
JPS6250970B2 JPS6250970B2 (en) 1987-10-28

Family

ID=12170782

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2561579A Granted JPS55118631A (en) 1979-03-07 1979-03-07 Diffusion furnace for treatment of semiconductor wafer

Country Status (1)

Country Link
JP (1) JPS55118631A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5875840A (en) * 1981-10-30 1983-05-07 Fujitsu Ltd Heat treatment furnace for semiconductors
JPS60111037U (en) * 1983-12-28 1985-07-27 株式会社　デンコ− Vertical semiconductor heat treatment furnace
JPS6192049U (en) * 1984-11-21 1986-06-14
JPS6211224A (en) * 1986-07-18 1987-01-20 Hitachi Ltd Heat treatment method for semiconductor wafer
JPS63102225A (en) * 1986-10-20 1988-05-07 Deisuko Haitetsuku:Kk Wafer boat for vertical type semiconductor thermal treatment equipment
JPH0193724U (en) * 1987-12-14 1989-06-20
KR200451640Y1 (en) * 2007-10-31 2010-12-28 어플라이드 머티어리얼스, 인코포레이티드 Hot Draw Blade
US8382180B2 (en) 2007-10-31 2013-02-26 Applied Material, Inc. Advanced FI blade for high temperature extraction

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62292490A (en) * 1986-06-12 1987-12-19 Toppan Moore Co Ltd Transferring method
JPS6321188A (en) * 1986-07-15 1988-01-28 Toppan Moore Co Ltd Transferring method
JPS6321187A (en) * 1986-07-15 1988-01-28 Toppan Moore Co Ltd Production of transfer sheet

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US62318A (en) * 1867-02-26 James b
JPS4710730U (en) * 1971-03-03 1972-10-07
US3836392A (en) * 1971-07-07 1974-09-17 Sandvik Ab Process for increasing the resistance to wear of the surface of hard metal cemented carbide parts subject to wear
JPS5213778A (en) * 1975-07-23 1977-02-02 Toshiba Corp Plasma-etching method
US4062318A (en) * 1976-11-19 1977-12-13 Rca Corporation Apparatus for chemical vapor deposition

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US62318A (en) * 1867-02-26 James b
JPS4710730U (en) * 1971-03-03 1972-10-07
US3836392A (en) * 1971-07-07 1974-09-17 Sandvik Ab Process for increasing the resistance to wear of the surface of hard metal cemented carbide parts subject to wear
JPS5213778A (en) * 1975-07-23 1977-02-02 Toshiba Corp Plasma-etching method
US4062318A (en) * 1976-11-19 1977-12-13 Rca Corporation Apparatus for chemical vapor deposition

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5875840A (en) * 1981-10-30 1983-05-07 Fujitsu Ltd Heat treatment furnace for semiconductors
JPS6224937B2 (en) * 1981-10-30 1987-05-30 Fujitsu Ltd
JPS60111037U (en) * 1983-12-28 1985-07-27 株式会社　デンコ− Vertical semiconductor heat treatment furnace
JPS6192049U (en) * 1984-11-21 1986-06-14
JPS6211224A (en) * 1986-07-18 1987-01-20 Hitachi Ltd Heat treatment method for semiconductor wafer
JPS63102225A (en) * 1986-10-20 1988-05-07 Deisuko Haitetsuku:Kk Wafer boat for vertical type semiconductor thermal treatment equipment
JPH0193724U (en) * 1987-12-14 1989-06-20
KR200451640Y1 (en) * 2007-10-31 2010-12-28 어플라이드 머티어리얼스, 인코포레이티드 Hot Draw Blade
US8382180B2 (en) 2007-10-31 2013-02-26 Applied Material, Inc. Advanced FI blade for high temperature extraction

Also Published As

Publication number Publication date
JPS6250970B2 (en) 1987-10-28

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