JPS55113384A - Photoelectric displacement transducing element - Google Patents
Photoelectric displacement transducing elementInfo
- Publication number
- JPS55113384A JPS55113384A JP16712779A JP16712779A JPS55113384A JP S55113384 A JPS55113384 A JP S55113384A JP 16712779 A JP16712779 A JP 16712779A JP 16712779 A JP16712779 A JP 16712779A JP S55113384 A JPS55113384 A JP S55113384A
- Authority
- JP
- Japan
- Prior art keywords
- light beam
- regions
- substrate
- photodiode
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006073 displacement reaction Methods 0.000 title 1
- 230000002463 transducing effect Effects 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 4
- 239000004065 semiconductor Substances 0.000 abstract 3
- 239000010408 film Substances 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- 239000010409 thin film Substances 0.000 abstract 2
- 238000001514 detection method Methods 0.000 abstract 1
Landscapes
- Light Receiving Elements (AREA)
Abstract
PURPOSE: To perform the detection of a light beam position with one transducer by forming a photodiode on the surface of a semiconductor substrate and forming a thin metal film having desired opening pattern on the photodiode.
CONSTITUTION: Reverse conducting semiconductor regions 101 and 102 to a substrate 100 are formed in number corresponding to the number of elements on the surface of the semiconductor substrate 100, and thin metal films 106A and 107A are formed on the surface of the regions 101 and 102. Openings 108 and 109 as desired opening pattern are perforated in the thin films 106A and 107A. Photodiodes are formed between the regions 101, 102 and the substrate 100. The thin films 106A, 107A make contact with the regions 101, 102. When a light beam 110 is irradiated on the element thus constructed and moved in a direction as designated by an arrow, the change in position of the light beam can be produced as electric amount from terminals t0 and t1. The relationship between this electric output and the position of the light beam can be designed arbitrarily by designing the pattern of the opening 108.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16712779A JPS55113384A (en) | 1979-12-21 | 1979-12-21 | Photoelectric displacement transducing element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16712779A JPS55113384A (en) | 1979-12-21 | 1979-12-21 | Photoelectric displacement transducing element |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1714674A Division JPS50113250A (en) | 1974-02-14 | 1974-02-14 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55113384A true JPS55113384A (en) | 1980-09-01 |
Family
ID=15843927
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16712779A Pending JPS55113384A (en) | 1979-12-21 | 1979-12-21 | Photoelectric displacement transducing element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55113384A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06196726A (en) * | 1992-12-24 | 1994-07-15 | Canon Inc | Light receiving element, and displacement detector equipped with this light receiving device |
-
1979
- 1979-12-21 JP JP16712779A patent/JPS55113384A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06196726A (en) * | 1992-12-24 | 1994-07-15 | Canon Inc | Light receiving element, and displacement detector equipped with this light receiving device |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5793585A (en) | Semiconductor photoreceiving element | |
JPS5710992A (en) | Semiconductor device and manufacture therefor | |
JPS55113384A (en) | Photoelectric displacement transducing element | |
JPS52124889A (en) | Semiconductor photoelectric transducer | |
JPS5331983A (en) | Production of semiconductor substrates | |
JPS52116174A (en) | Manufacture of semiconductor device | |
JPS5299085A (en) | Production of semiconductor device | |
JPS5363871A (en) | Production of semiconductor device | |
JPS5587007A (en) | Semiconductor photo position detector | |
JPS5648184A (en) | Photoreading element | |
JPS5766666A (en) | Solid state image pickup device | |
JPS5643781A (en) | Semiconductor photodetecting element | |
JPS577925A (en) | Manufacture of thin film integrated circuit | |
JPS5339081A (en) | Semiconductor device | |
JPS5390A (en) | Composite photoelectric conversion element | |
JPS539473A (en) | Photoetching process | |
JPS5289083A (en) | Production of semiconductor photoelectric converting element | |
EP0136534A3 (en) | Method of forming a large surface area integrated circuit | |
JPS57172780A (en) | Manufacture of image sensor | |
JPS5350989A (en) | Production of photoconductive film | |
JPS544575A (en) | Production of semiconductor devices | |
JPS51112277A (en) | Semiconductor device and its production method | |
JPS5271994A (en) | Semiconductor integrated circuit device | |
JPS53106577A (en) | Production of semiconductor device | |
JPS5546574A (en) | Contact exposure photomask |