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JPS55113375A - Insulated gate type field effect semiconductor device - Google Patents

Insulated gate type field effect semiconductor device

Info

Publication number
JPS55113375A
JPS55113375A JP1983379A JP1983379A JPS55113375A JP S55113375 A JPS55113375 A JP S55113375A JP 1983379 A JP1983379 A JP 1983379A JP 1983379 A JP1983379 A JP 1983379A JP S55113375 A JPS55113375 A JP S55113375A
Authority
JP
Japan
Prior art keywords
time constant
layer
contacts
gating
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1983379A
Other languages
Japanese (ja)
Inventor
Katsuhisa Tachikawa
Akira Takanashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP1983379A priority Critical patent/JPS55113375A/en
Publication of JPS55113375A publication Critical patent/JPS55113375A/en
Pending legal-status Critical Current

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Abstract

PURPOSE: To improve signal propagation delay to be effected by C-R time constant by a method wherein contacts to control applying voltage are provided at plural points on poly-Si gate layer and C-R time constant is decreased.
CONSTITUTION: A gating wiring layer 22 connects by ohmic means a polycrystal silicon gating layer 15 at two or more contacts 22a, 22b, and in the same way a gating wiring layer 23 also connects by ohmic means a polycrystal silicon layer 16 at the contacts 23a, 23b. And wiring layers 22, 23 are both connected to the signal input terminal VIN. Thus it is possible to decrease C-R time constant of the gate because it is possible to decrease resistance components at the insulation gate of FETQP, QN. Accordingly, propagation delay due to C-R time constant is improved and switching speed of FETQP, QN or propagation speed of inverter is upgraded.
COPYRIGHT: (C)1980,JPO&Japio
JP1983379A 1979-02-23 1979-02-23 Insulated gate type field effect semiconductor device Pending JPS55113375A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1983379A JPS55113375A (en) 1979-02-23 1979-02-23 Insulated gate type field effect semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1983379A JPS55113375A (en) 1979-02-23 1979-02-23 Insulated gate type field effect semiconductor device

Publications (1)

Publication Number Publication Date
JPS55113375A true JPS55113375A (en) 1980-09-01

Family

ID=12010278

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1983379A Pending JPS55113375A (en) 1979-02-23 1979-02-23 Insulated gate type field effect semiconductor device

Country Status (1)

Country Link
JP (1) JPS55113375A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6260049U (en) * 1985-10-04 1987-04-14
JPS62131574A (en) * 1985-12-03 1987-06-13 Toshiba Corp Semiconductor device
US5416352A (en) * 1993-09-08 1995-05-16 Fujitsu Limited Gate electrode formed on a region ranging from a gate insulating film to a field insulating film

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53126280A (en) * 1977-04-11 1978-11-04 Hitachi Ltd Complementary type mis semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53126280A (en) * 1977-04-11 1978-11-04 Hitachi Ltd Complementary type mis semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6260049U (en) * 1985-10-04 1987-04-14
JPH0513017Y2 (en) * 1985-10-04 1993-04-06
JPS62131574A (en) * 1985-12-03 1987-06-13 Toshiba Corp Semiconductor device
US5416352A (en) * 1993-09-08 1995-05-16 Fujitsu Limited Gate electrode formed on a region ranging from a gate insulating film to a field insulating film

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