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JPS551132A - Dry etching - Google Patents

Dry etching

Info

Publication number
JPS551132A
JPS551132A JP7388078A JP7388078A JPS551132A JP S551132 A JPS551132 A JP S551132A JP 7388078 A JP7388078 A JP 7388078A JP 7388078 A JP7388078 A JP 7388078A JP S551132 A JPS551132 A JP S551132A
Authority
JP
Japan
Prior art keywords
electrodes
etching
film
reaction container
chf3
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7388078A
Other languages
Japanese (ja)
Inventor
Hiroshi Kinoshita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP7388078A priority Critical patent/JPS551132A/en
Publication of JPS551132A publication Critical patent/JPS551132A/en
Pending legal-status Critical Current

Links

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  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE: To form connecting holes through the process consisting of making a layer of a fluoric compound on electrodes by the discharge of trifluoromethane in a reaction container, and placing and etching the work having resist mask on said electrodes.
CONSTITUTION: Before the Si substrate on which a resist pattern 17 is formed is placed on the lower electrode 7 in a reaction container 1, plasma discharge is made between electrodes 5 and 7 for one minute with the internal pressure of said reaction container 1 fixed at 0.1 Torr by supplying 2 CHF3 to form an approximately 0.1 μm layer of a fluoric compound on said electrodes 5 and 7. Thereby, selective etching of SiO2 film 15 is ensured since said film is considerably improved in the ratio of etching speed with said substrate. Said resist pattern 17 does not deteriorate if said film 15 is removed after said electrode 7 is cooled with water and subjected to plasma etching at 0.05 Torr by supplying CHF3 for about 20 minutes. A connecting hole 18 is completed when said resist mask 17 is removed.
COPYRIGHT: (C)1980,JPO&Japio
JP7388078A 1978-06-19 1978-06-19 Dry etching Pending JPS551132A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7388078A JPS551132A (en) 1978-06-19 1978-06-19 Dry etching

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7388078A JPS551132A (en) 1978-06-19 1978-06-19 Dry etching

Publications (1)

Publication Number Publication Date
JPS551132A true JPS551132A (en) 1980-01-07

Family

ID=13530952

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7388078A Pending JPS551132A (en) 1978-06-19 1978-06-19 Dry etching

Country Status (1)

Country Link
JP (1) JPS551132A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4341616A (en) * 1980-01-25 1982-07-27 Mitsubishi Denki Kabushiki Kaisha Dry etching device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4341616A (en) * 1980-01-25 1982-07-27 Mitsubishi Denki Kabushiki Kaisha Dry etching device

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