JPS5511120A - Etching solution for titanium - Google Patents
Etching solution for titaniumInfo
- Publication number
- JPS5511120A JPS5511120A JP8268578A JP8268578A JPS5511120A JP S5511120 A JPS5511120 A JP S5511120A JP 8268578 A JP8268578 A JP 8268578A JP 8268578 A JP8268578 A JP 8268578A JP S5511120 A JPS5511120 A JP S5511120A
- Authority
- JP
- Japan
- Prior art keywords
- water
- action
- etching
- benzotriazol
- aqueous ammonia
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010936 titanium Substances 0.000 title abstract 6
- 238000005530 etching Methods 0.000 title abstract 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 title abstract 2
- 229910052719 titanium Inorganic materials 0.000 title abstract 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 6
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 abstract 5
- 235000011114 ammonium hydroxide Nutrition 0.000 abstract 5
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 abstract 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 abstract 3
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 abstract 3
- 239000002131 composite material Substances 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000005696 Diammonium phosphate Substances 0.000 abstract 1
- 239000002585 base Substances 0.000 abstract 1
- 239000003637 basic solution Substances 0.000 abstract 1
- 239000003054 catalyst Substances 0.000 abstract 1
- 230000009920 chelation Effects 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 abstract 1
- 230000006378 damage Effects 0.000 abstract 1
- MNNHAPBLZZVQHP-UHFFFAOYSA-N diammonium hydrogen phosphate Chemical compound [NH4+].[NH4+].OP([O-])([O-])=O MNNHAPBLZZVQHP-UHFFFAOYSA-N 0.000 abstract 1
- 229910000388 diammonium phosphate Inorganic materials 0.000 abstract 1
- 235000019838 diammonium phosphate Nutrition 0.000 abstract 1
- 239000012212 insulator Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 239000000243 solution Substances 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/32—Alkaline compositions
- C23F1/38—Alkaline compositions for etching refractory metals
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- ing And Chemical Polishing (AREA)
Abstract
PURPOSE:Composite etching solution of titanium, being in no danger of attacking Cu2O in thick film paste, SiO2 in base board etc., containing water and each fixed ratio of benzotriazol, H2O2, NH4OH and/or NH4 salt against water. CONSTITUTION:Composite material for etching of Ti, containing water and 0.1- 5g, especially 0.3-3g, of benzotriazol, 30-120ml, especially 38-100ml, of H2O2, a fixed amount of NH4OH (aqueous ammonia) and/or NH4 salt against 50ml of water. On this occasion, 0.5-10ml, especially 1-5ml, or aqueous ammonia and 2-30g, especially 6-20g, of NH4 salt (for example, diammonium phosphate) against 50ml of water, are used. Water soluble Ti complex is formed by chelation action of benzotriazol in the above composite material and Ti etching action is given. Also, ehelation action is accelerated by H2O2 as catalyst and basic solution is made by aqueous ammonia and destruction of insulator is prevented and also, etching action of Ti is accelerated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8268578A JPS5511120A (en) | 1978-07-07 | 1978-07-07 | Etching solution for titanium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8268578A JPS5511120A (en) | 1978-07-07 | 1978-07-07 | Etching solution for titanium |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5511120A true JPS5511120A (en) | 1980-01-25 |
| JPS5727932B2 JPS5727932B2 (en) | 1982-06-14 |
Family
ID=13781266
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8268578A Granted JPS5511120A (en) | 1978-07-07 | 1978-07-07 | Etching solution for titanium |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5511120A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6241797U (en) * | 1985-08-30 | 1987-03-12 | ||
| EP0687751A1 (en) * | 1994-06-15 | 1995-12-20 | International Business Machines Corporation | Selective etching of TiW for C4 fabrication |
| GB2323850A (en) * | 1997-04-03 | 1998-10-07 | Nec Corp | Washing solution for a semiconductor device |
| JP2002155382A (en) * | 2000-09-05 | 2002-05-31 | Wako Pure Chem Ind Ltd | Etchant for ti-base film and etching method |
| WO2023086093A1 (en) * | 2021-11-11 | 2023-05-19 | Microsoft Technology Licensing Llc | Etchant and method for selectively etching titanium dioxide |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58141923U (en) * | 1982-03-18 | 1983-09-24 | 小松 勲 | bag |
-
1978
- 1978-07-07 JP JP8268578A patent/JPS5511120A/en active Granted
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6241797U (en) * | 1985-08-30 | 1987-03-12 | ||
| EP0687751A1 (en) * | 1994-06-15 | 1995-12-20 | International Business Machines Corporation | Selective etching of TiW for C4 fabrication |
| GB2323850A (en) * | 1997-04-03 | 1998-10-07 | Nec Corp | Washing solution for a semiconductor device |
| GB2323850B (en) * | 1997-04-03 | 2000-12-20 | Nec Corp | A semiconductor device and method of manufacture thereof |
| JP2002155382A (en) * | 2000-09-05 | 2002-05-31 | Wako Pure Chem Ind Ltd | Etchant for ti-base film and etching method |
| WO2023086093A1 (en) * | 2021-11-11 | 2023-05-19 | Microsoft Technology Licensing Llc | Etchant and method for selectively etching titanium dioxide |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5727932B2 (en) | 1982-06-14 |
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