[go: up one dir, main page]

JPS55111168A - Turn-off thyristor - Google Patents

Turn-off thyristor

Info

Publication number
JPS55111168A
JPS55111168A JP1933379A JP1933379A JPS55111168A JP S55111168 A JPS55111168 A JP S55111168A JP 1933379 A JP1933379 A JP 1933379A JP 1933379 A JP1933379 A JP 1933379A JP S55111168 A JPS55111168 A JP S55111168A
Authority
JP
Japan
Prior art keywords
thyristor
layer
main thyristor
main
auxiliary
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1933379A
Other languages
Japanese (ja)
Other versions
JPS6148270B2 (en
Inventor
Tetsuo Sueoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Meidensha Electric Manufacturing Co Ltd
Original Assignee
Meidensha Electric Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Meidensha Electric Manufacturing Co Ltd filed Critical Meidensha Electric Manufacturing Co Ltd
Priority to JP1933379A priority Critical patent/JPS55111168A/en
Publication of JPS55111168A publication Critical patent/JPS55111168A/en
Publication of JPS6148270B2 publication Critical patent/JPS6148270B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/221—Thyristors having amplifying gate structures, e.g. cascade configurations

Landscapes

  • Power Conversion In General (AREA)
  • Thyristor Switches And Gates (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To surely turn off a main thyristor in a short time, by making the width of the base of an auxiliary thyristor substantially larger than that of the base of the main thyristor. CONSTITUTION:A main thyristor 1 is composed of four layers P1, N1, P2, N2. An auxiliary thyristor 2 is composed of four layers P1, N1, P2, N3. Althought the layer N3 is produced by diffusion at the same concentration and same time as the layer N2, the diffusion depth of the layer N3 is made by DELTAxj (5-10mu) smaller than that of the layer N2 so that the voltage drop across the auxiliary thyristor 2 is greater by DELTAxj greater than that across the main thyristor 1. As a result, the time of shifting from the auxiliary thyristor 2 to the main thyristor 1 is shortened and the main thyristor is surely turned off in a short time.
JP1933379A 1979-02-21 1979-02-21 Turn-off thyristor Granted JPS55111168A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1933379A JPS55111168A (en) 1979-02-21 1979-02-21 Turn-off thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1933379A JPS55111168A (en) 1979-02-21 1979-02-21 Turn-off thyristor

Publications (2)

Publication Number Publication Date
JPS55111168A true JPS55111168A (en) 1980-08-27
JPS6148270B2 JPS6148270B2 (en) 1986-10-23

Family

ID=11996473

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1933379A Granted JPS55111168A (en) 1979-02-21 1979-02-21 Turn-off thyristor

Country Status (1)

Country Link
JP (1) JPS55111168A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57160161A (en) * 1981-03-27 1982-10-02 Meidensha Electric Mfg Co Ltd Gate turn-off thyristor
JPS57178368A (en) * 1981-04-27 1982-11-02 Hitachi Ltd Semiconductor device for breaking current
US5455434A (en) * 1992-05-11 1995-10-03 Siemens Aktiengesellschaft Thyristor with breakdown region
JPH0850518A (en) * 1994-04-13 1996-02-20 Sgs Thomson Microelectron Sa Overcurrent protection device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57160161A (en) * 1981-03-27 1982-10-02 Meidensha Electric Mfg Co Ltd Gate turn-off thyristor
JPS57178368A (en) * 1981-04-27 1982-11-02 Hitachi Ltd Semiconductor device for breaking current
US5455434A (en) * 1992-05-11 1995-10-03 Siemens Aktiengesellschaft Thyristor with breakdown region
JPH0850518A (en) * 1994-04-13 1996-02-20 Sgs Thomson Microelectron Sa Overcurrent protection device

Also Published As

Publication number Publication date
JPS6148270B2 (en) 1986-10-23

Similar Documents

Publication Publication Date Title
JPS5610970A (en) Thyristor
JPS55111168A (en) Turn-off thyristor
JPS55108790A (en) Semiconductor luminous device
JPS52185A (en) Semiconductor
JPS5230389A (en) Thyristor
JPS51128266A (en) Semiconductor unit
JPS5368066A (en) Semiconductor switch
JPS54105987A (en) Manufacture of semiconductor device
JPS5277536A (en) Driving circuit of gas discharge panel
JPS5233382A (en) Incinerater of refuse and the like
JPS52137535A (en) Carburetor
JPS53140976A (en) Semiconductor device
JPS532961A (en) Method for combination of stabilizers in lighting circuit
JPS538087A (en) Ill type semiconductor device
JPS51145287A (en) Semiconductor luminous device
JPS5314546A (en) Dynamic inverter circuit
JPS5754369A (en) Thyristor for high speed switching
JPS5266365A (en) Semiconductor logic circuit
JPS5219984A (en) Manufacture process for a isolation layer used to make a semiconductor element
JPS5370676A (en) Production of semiconductor element
JPS51144188A (en) Thyristor
JPS51123569A (en) Semiconductor manufacturing method
JPS5266366A (en) Semiconductor logic circuit
JPS5383478A (en) Reverse conducting thyristor
JPS51144404A (en) A water-in-oil type heavy-oil emulsion fuel composition