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JPS55108943A - Optical recording and reproducing device with semiconductor laser as light source - Google Patents

Optical recording and reproducing device with semiconductor laser as light source

Info

Publication number
JPS55108943A
JPS55108943A JP1574179A JP1574179A JPS55108943A JP S55108943 A JPS55108943 A JP S55108943A JP 1574179 A JP1574179 A JP 1574179A JP 1574179 A JP1574179 A JP 1574179A JP S55108943 A JPS55108943 A JP S55108943A
Authority
JP
Japan
Prior art keywords
light
semiconductor laser
path length
transfer efficiency
small
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1574179A
Other languages
Japanese (ja)
Other versions
JPS6043569B2 (en
Inventor
Akifumi Nakada
Tomio Yoshida
Toshio Sato
Shunji Harikae
Michiyoshi Nagashima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP54015741A priority Critical patent/JPS6043569B2/en
Publication of JPS55108943A publication Critical patent/JPS55108943A/en
Publication of JPS6043569B2 publication Critical patent/JPS6043569B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Optical Recording Or Reproduction (AREA)
  • Optical Head (AREA)
  • Semiconductor Lasers (AREA)
  • Automatic Focus Adjustment (AREA)

Abstract

PURPOSE: To shorten a light path length to make an optical sytem small-size and improve transfer efficiency of a light, by using two cylindrical lenses to convert the light from a laser light source, which has a plane luminous face, to a parallel light.
CONSTITUTION: The sectional form of the light beam on the luminous face of a semiconductor laser is generally plane in relation to its junction face. When only the light at the center of this plane luminous face is condensed, transfer efficiency is lowered to several %, and a required light path length is long. The emission light from semiconductor laser 11 is converted to a parallel light of an approximately round section between concave cylindrical lens 14 and convex cylindrical lens 15 and is condensed to a small beam diameter on disc 19 by condenser lens 18. By this constitution, the light path length of the condensation optical system can be shortened considerably to make the unit small-size, and light transfer efficiency of the light beam can be improved up to 40W50% or more.
COPYRIGHT: (C)1980,JPO&Japio
JP54015741A 1979-02-13 1979-02-13 Optical recording and reproducing device using a semiconductor laser as a light source Expired JPS6043569B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP54015741A JPS6043569B2 (en) 1979-02-13 1979-02-13 Optical recording and reproducing device using a semiconductor laser as a light source

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54015741A JPS6043569B2 (en) 1979-02-13 1979-02-13 Optical recording and reproducing device using a semiconductor laser as a light source

Publications (2)

Publication Number Publication Date
JPS55108943A true JPS55108943A (en) 1980-08-21
JPS6043569B2 JPS6043569B2 (en) 1985-09-28

Family

ID=11897178

Family Applications (1)

Application Number Title Priority Date Filing Date
JP54015741A Expired JPS6043569B2 (en) 1979-02-13 1979-02-13 Optical recording and reproducing device using a semiconductor laser as a light source

Country Status (1)

Country Link
JP (1) JPS6043569B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8507334B2 (en) * 2001-08-27 2013-08-13 Semiconductor Energy Laboratory Co., Ltd. Method of laser irradiation, laser irradiation apparatus, and method of manufacturing a semiconductor device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0232715U (en) * 1988-08-26 1990-03-01

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8507334B2 (en) * 2001-08-27 2013-08-13 Semiconductor Energy Laboratory Co., Ltd. Method of laser irradiation, laser irradiation apparatus, and method of manufacturing a semiconductor device
US8722521B2 (en) 2001-08-27 2014-05-13 Semiconductor Energy Laboratory Co., Ltd. Method of laser irradiation, laser irradiation apparatus, and method of manufacturing a semiconductor device
US9564323B2 (en) 2001-08-27 2017-02-07 Semiconductor Energy Laboratory Co., Ltd. Method of laser irradiation, laser irradiation apparatus, and method of manufacturing a semiconductor device
US10488671B2 (en) 2001-08-27 2019-11-26 Semiconductor Energy Laboratory Co., Ltd. Method of laser irradiation, laser irradiation apparatus, and method of manufacturing a semiconductor device

Also Published As

Publication number Publication date
JPS6043569B2 (en) 1985-09-28

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