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JPS5485734A - Thin film type thermal head - Google Patents

Thin film type thermal head

Info

Publication number
JPS5485734A
JPS5485734A JP15400877A JP15400877A JPS5485734A JP S5485734 A JPS5485734 A JP S5485734A JP 15400877 A JP15400877 A JP 15400877A JP 15400877 A JP15400877 A JP 15400877A JP S5485734 A JPS5485734 A JP S5485734A
Authority
JP
Japan
Prior art keywords
sic
film
thermal head
resistor
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15400877A
Other languages
Japanese (ja)
Inventor
Keizaburo Kuramasu
Sumio Maekawa
Masaji Arai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP15400877A priority Critical patent/JPS5485734A/en
Publication of JPS5485734A publication Critical patent/JPS5485734A/en
Pending legal-status Critical Current

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  • Non-Adjustable Resistors (AREA)

Abstract

PURPOSE: To enhance high speed operation and reliability of a thermal head, by using a mixture of SiC and SiO2 as an abrasion resistant film.
CONSTITUTION: Glass 2 is glazed on insulating substrate 1, such as Al2O3. On this, heating resistor 3, such as Si-Ta alloy is formed, and further on this, electrode 4, such as Cr-Au is provided for energizing resistor 3. On these, sputtering is effected with a SiC target in an argon gas containing O2 to form protective film 5 made of Sic-SiO2. Since this is operated at a temperature of substrate 1 where alloy formation of resistor 3 and electrode 4 does not occur, no crack occurs on the SiC abrasion resistant film. The abrasion resistance of film 5 slightly decreses, but formation of 1W2 μ thick SiC film on film 5 permits the abrasion resistance to little be lowered.
COPYRIGHT: (C)1979,JPO&Japio
JP15400877A 1977-12-20 1977-12-20 Thin film type thermal head Pending JPS5485734A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15400877A JPS5485734A (en) 1977-12-20 1977-12-20 Thin film type thermal head

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15400877A JPS5485734A (en) 1977-12-20 1977-12-20 Thin film type thermal head

Publications (1)

Publication Number Publication Date
JPS5485734A true JPS5485734A (en) 1979-07-07

Family

ID=15574884

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15400877A Pending JPS5485734A (en) 1977-12-20 1977-12-20 Thin film type thermal head

Country Status (1)

Country Link
JP (1) JPS5485734A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0113950A2 (en) * 1982-11-24 1984-07-25 Hewlett-Packard Company Method of making a resistance heater
US4616408A (en) * 1982-11-24 1986-10-14 Hewlett-Packard Company Inversely processed resistance heater
US4734563A (en) * 1982-11-24 1988-03-29 Hewlett-Packard Company Inversely processed resistance heater

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0113950A2 (en) * 1982-11-24 1984-07-25 Hewlett-Packard Company Method of making a resistance heater
US4616408A (en) * 1982-11-24 1986-10-14 Hewlett-Packard Company Inversely processed resistance heater
US4734563A (en) * 1982-11-24 1988-03-29 Hewlett-Packard Company Inversely processed resistance heater

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