JPS5478978A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5478978A JPS5478978A JP14669877A JP14669877A JPS5478978A JP S5478978 A JPS5478978 A JP S5478978A JP 14669877 A JP14669877 A JP 14669877A JP 14669877 A JP14669877 A JP 14669877A JP S5478978 A JPS5478978 A JP S5478978A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- thickness
- mesa groove
- base
- groove
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000010276 construction Methods 0.000 abstract 1
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Landscapes
- Bipolar Transistors (AREA)
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE: To increase the mechanical strength, by making thin the thickness of the base layer so that no punch through is caused, greater the thickness of the emitter layer of low resistance, and thinner at the position of the mesa groove, and shallowing the mesa groove.
CONSTITUTION: The PB layer 4 and PE layer 5 are formed at the both sides of the base NB layer 1 of high specific resistivity, and the NE layer 6 is selectively formed in the layer 4. The thickness of the PB layer 5 is partially changed and it is made thin at the position 13 of the mesa groove formation. The mesa groove 10 reaching the base layer 1 from the layers 4 and 5 and the groove is coated with glass. With this construction, the ON voltage drop can be decreased without lowering the mechanical strength of the substrate.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14669877A JPS5478978A (en) | 1977-12-06 | 1977-12-06 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14669877A JPS5478978A (en) | 1977-12-06 | 1977-12-06 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5478978A true JPS5478978A (en) | 1979-06-23 |
Family
ID=15413528
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14669877A Pending JPS5478978A (en) | 1977-12-06 | 1977-12-06 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5478978A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5138984A (en) * | 1974-09-30 | 1976-03-31 | Hitachi Ltd | HANDOTAISOSHINOSEIZOHOHO |
-
1977
- 1977-12-06 JP JP14669877A patent/JPS5478978A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5138984A (en) * | 1974-09-30 | 1976-03-31 | Hitachi Ltd | HANDOTAISOSHINOSEIZOHOHO |
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