JPS5472672A - Forming material of ohmic contact - Google Patents
Forming material of ohmic contactInfo
- Publication number
- JPS5472672A JPS5472672A JP14026677A JP14026677A JPS5472672A JP S5472672 A JPS5472672 A JP S5472672A JP 14026677 A JP14026677 A JP 14026677A JP 14026677 A JP14026677 A JP 14026677A JP S5472672 A JPS5472672 A JP S5472672A
- Authority
- JP
- Japan
- Prior art keywords
- contact resistance
- dopant
- ohmic contact
- specific contact
- ohmic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 title abstract 3
- 239000002019 doping agent Substances 0.000 abstract 4
- 239000000956 alloy Substances 0.000 abstract 2
- 229910045601 alloy Inorganic materials 0.000 abstract 2
- 150000001875 compounds Chemical class 0.000 abstract 2
- 239000013078 crystal Substances 0.000 abstract 2
- 230000008018 melting Effects 0.000 abstract 2
- 238000002844 melting Methods 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 229910052793 cadmium Inorganic materials 0.000 abstract 1
- 229910052718 tin Inorganic materials 0.000 abstract 1
- 229910052725 zinc Inorganic materials 0.000 abstract 1
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To obtain the ohmic connection material to the III-V group compound semiconductor crystal which is enabled to connect to n or p type crystal with low specific contact resistance, by the lower melting point and only changing the dopant.
CONSTITUTION: The eutetic alloy of Au 75 wt.% and Sb 25 wt.% has the melting point of 360°C which is lower than that of AuGe alloy, and this is enabled for the formation of ohmic contact as it is, but it has high specific contact resistance. The specific contact resistance is lowered by addig n type dopant Si, Ge, Sn and p type dopant Cd, Zn. The dopant is taken as 2.5 to 5 wt.% and if the range is out, the specific contact resistance s increased. With this material, the ohmic contact can be formed with lower contact resistance to the III-V group compound semiconductor easy for bonding with good reproducibility.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14026677A JPS5472672A (en) | 1977-11-22 | 1977-11-22 | Forming material of ohmic contact |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14026677A JPS5472672A (en) | 1977-11-22 | 1977-11-22 | Forming material of ohmic contact |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5472672A true JPS5472672A (en) | 1979-06-11 |
Family
ID=15264767
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14026677A Pending JPS5472672A (en) | 1977-11-22 | 1977-11-22 | Forming material of ohmic contact |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5472672A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5326719A (en) * | 1988-03-11 | 1994-07-05 | Unisearch Limited | Thin film growth using two part metal solvent |
-
1977
- 1977-11-22 JP JP14026677A patent/JPS5472672A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5326719A (en) * | 1988-03-11 | 1994-07-05 | Unisearch Limited | Thin film growth using two part metal solvent |
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