JPS5470778A - Fet transistor - Google Patents
Fet transistorInfo
- Publication number
- JPS5470778A JPS5470778A JP10009278A JP10009278A JPS5470778A JP S5470778 A JPS5470778 A JP S5470778A JP 10009278 A JP10009278 A JP 10009278A JP 10009278 A JP10009278 A JP 10009278A JP S5470778 A JPS5470778 A JP S5470778A
- Authority
- JP
- Japan
- Prior art keywords
- fet transistor
- fet
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
- H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
- H10D30/873—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET] having multiple gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/611—Insulated-gate field-effect transistors [IGFET] having multiple independently-addressable gate electrodes influencing the same channel
Landscapes
- Junction Field-Effect Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB3486477 | 1977-08-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5470778A true JPS5470778A (en) | 1979-06-06 |
Family
ID=10370862
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10009278A Pending JPS5470778A (en) | 1977-08-19 | 1978-08-18 | Fet transistor |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPS5470778A (en) |
| DE (1) | DE2836268A1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55161555A (en) * | 1979-06-05 | 1980-12-16 | Sumitomo Electric Ind Ltd | Continuous casting method |
| JPH01214056A (en) * | 1988-02-22 | 1989-08-28 | Toshiba Corp | Semiconductor devices and their usage |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2936998B2 (en) * | 1994-03-15 | 1999-08-23 | 日本電気株式会社 | Frequency converter |
-
1978
- 1978-08-18 JP JP10009278A patent/JPS5470778A/en active Pending
- 1978-08-18 DE DE19782836268 patent/DE2836268A1/en not_active Withdrawn
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55161555A (en) * | 1979-06-05 | 1980-12-16 | Sumitomo Electric Ind Ltd | Continuous casting method |
| JPH01214056A (en) * | 1988-02-22 | 1989-08-28 | Toshiba Corp | Semiconductor devices and their usage |
| JPH0770733B2 (en) * | 1988-02-22 | 1995-07-31 | 株式会社東芝 | Semiconductor device and method of using the same |
Also Published As
| Publication number | Publication date |
|---|---|
| DE2836268A1 (en) | 1979-03-01 |
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