JPS5458372A - Manufacture for mos type semiconductor integrated circuit - Google Patents
Manufacture for mos type semiconductor integrated circuitInfo
- Publication number
- JPS5458372A JPS5458372A JP12446977A JP12446977A JPS5458372A JP S5458372 A JPS5458372 A JP S5458372A JP 12446977 A JP12446977 A JP 12446977A JP 12446977 A JP12446977 A JP 12446977A JP S5458372 A JPS5458372 A JP S5458372A
- Authority
- JP
- Japan
- Prior art keywords
- film
- layer
- gate
- manufacture
- integrated circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 239000010408 film Substances 0.000 abstract 5
- 239000012535 impurity Substances 0.000 abstract 3
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 2
- 150000002500 ions Chemical class 0.000 abstract 2
- 230000003647 oxidation Effects 0.000 abstract 2
- 238000007254 oxidation reaction Methods 0.000 abstract 2
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
Landscapes
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Abstract
PURPOSE: To form the DSA type MOS device, by omitting the mask alignment when the n++ layer is formed apart from the end of the gate region, through the utilization of the selective oxidation using Si3N4.
CONSTITUTION: The field oxide film 202, gate oxide film 203, and conductive poly Si gate electrode 204 are formed on the p type Si substrate 201, and covering is made with the Si3N4 205. The film 205 is selectively removed and the ions of acceptor impurity are injected, the p+ base layer 208 is made with heat treatment and the oxide thin film 209 is grown with thermal oxidation succeedingly. Next, the film 205 is removed and the donor impurity is diffused on all the surfaces with high concentration sufficiently, then the film 209 is taken as the mask at the source region and the n++ layers 210 and 211 can be obtained slightly apart from the electrode 204 by self-alignment. Next, the n+ layer 212 is made by injecting donor impurity ions, connecting electrically the layer 210 and the channel under the gate. After that, the insulation coating 213 is made as conventioanlly, forming electrodes 210B and 211B
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12446977A JPS5458372A (en) | 1977-10-19 | 1977-10-19 | Manufacture for mos type semiconductor integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12446977A JPS5458372A (en) | 1977-10-19 | 1977-10-19 | Manufacture for mos type semiconductor integrated circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5458372A true JPS5458372A (en) | 1979-05-11 |
| JPS571908B2 JPS571908B2 (en) | 1982-01-13 |
Family
ID=14886285
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12446977A Granted JPS5458372A (en) | 1977-10-19 | 1977-10-19 | Manufacture for mos type semiconductor integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5458372A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3606901A1 (en) * | 1986-03-03 | 1987-09-10 | Hilti Ag | NAIL STRIP |
| JPS6427513U (en) * | 1987-08-08 | 1989-02-16 |
-
1977
- 1977-10-19 JP JP12446977A patent/JPS5458372A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS571908B2 (en) | 1982-01-13 |
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