JPS5451393A - Light emitting diode - Google Patents
Light emitting diodeInfo
- Publication number
- JPS5451393A JPS5451393A JP11760877A JP11760877A JPS5451393A JP S5451393 A JPS5451393 A JP S5451393A JP 11760877 A JP11760877 A JP 11760877A JP 11760877 A JP11760877 A JP 11760877A JP S5451393 A JPS5451393 A JP S5451393A
- Authority
- JP
- Japan
- Prior art keywords
- light
- electrode
- emission
- wavelength
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 abstract 4
- 239000013078 crystal Substances 0.000 abstract 3
- 125000005842 heteroatom Chemical group 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 150000002739 metals Chemical class 0.000 abstract 1
Landscapes
- Led Devices (AREA)
Abstract
PURPOSE: To make possible light emission of high quality with high light emission efficiency by enabling the interference effect of light to be positively utilized.
CONSTITUTION: The double hetero structure comprising sandwiching a semiconductor crystal layer 12 acting as a light emitting layer from both sides with semiconductor crystal layers 11, 13 of a larger forbidden band width is provided, wherein a light reflective back electrode 15 is formed on one of the two main surfaces of the laminated crystals and a front electrode 14 convenient for drawing out of light is formed on the other. Thereupon, the spacing D between the emission face of light and the back electrode face, the spacing (d) between the light emission layer and the back electrode, the emission wavelength λ in a vacuum and the equivalent refractive index (n) of the light emitting diode to the light of wavelength λ are so set that the relations thereamong satisfy the conditions shown by formulas-(1), (2). Here, m, m' are the positive integers indicating the number of order of interference, and ϕ is the phase change produced at the time when the light reflects at the interface of the semiconductor and electrode and is the constant determined by the semiconductor used, electrode metals and wavelength of light. The thickness of the light emission layer is defined below the order of 1/10μm
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11760877A JPS5451393A (en) | 1977-09-29 | 1977-09-29 | Light emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11760877A JPS5451393A (en) | 1977-09-29 | 1977-09-29 | Light emitting diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5451393A true JPS5451393A (en) | 1979-04-23 |
Family
ID=14715967
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11760877A Pending JPS5451393A (en) | 1977-09-29 | 1977-09-29 | Light emitting diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5451393A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2019220704A (en) * | 2013-06-19 | 2019-12-26 | ルミレッズ ホールディング ベーフェー | Led with patterned surface feature part based on emission field patterns |
-
1977
- 1977-09-29 JP JP11760877A patent/JPS5451393A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2019220704A (en) * | 2013-06-19 | 2019-12-26 | ルミレッズ ホールディング ベーフェー | Led with patterned surface feature part based on emission field patterns |
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