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JPS5425675A - Electron beam exposure unit - Google Patents

Electron beam exposure unit

Info

Publication number
JPS5425675A
JPS5425675A JP9126777A JP9126777A JPS5425675A JP S5425675 A JPS5425675 A JP S5425675A JP 9126777 A JP9126777 A JP 9126777A JP 9126777 A JP9126777 A JP 9126777A JP S5425675 A JPS5425675 A JP S5425675A
Authority
JP
Japan
Prior art keywords
electron beam
exposure unit
beam exposure
pattern
deteriorating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9126777A
Other languages
Japanese (ja)
Inventor
Masaki Ito
Sotaro Edokoro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP9126777A priority Critical patent/JPS5425675A/en
Publication of JPS5425675A publication Critical patent/JPS5425675A/en
Pending legal-status Critical Current

Links

Landscapes

  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE: To reduce the total exposure time without deteriorating the device performance, by classifying the pattern into a plurality of sections according to the accuracy requested and performing exposure with suitable conditions to each section, in radiating beam on the test piece in accordance with the pattern to be formed.
COPYRIGHT: (C)1979,JPO&Japio
JP9126777A 1977-07-28 1977-07-28 Electron beam exposure unit Pending JPS5425675A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9126777A JPS5425675A (en) 1977-07-28 1977-07-28 Electron beam exposure unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9126777A JPS5425675A (en) 1977-07-28 1977-07-28 Electron beam exposure unit

Publications (1)

Publication Number Publication Date
JPS5425675A true JPS5425675A (en) 1979-02-26

Family

ID=14021648

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9126777A Pending JPS5425675A (en) 1977-07-28 1977-07-28 Electron beam exposure unit

Country Status (1)

Country Link
JP (1) JPS5425675A (en)

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1980002772A1 (en) * 1979-06-08 1980-12-11 Fujitsu Ltd Electron beam projecting system
JPS60196941A (en) * 1984-02-29 1985-10-05 Fujitsu Ltd Electron beam exposure
JPS6182425A (en) * 1984-09-29 1986-04-26 Toshiba Corp Charged beam exposure equipment
JP4554749B2 (en) * 2000-01-25 2010-09-29 株式会社アドバンテスト Electron beam exposure apparatus and semiconductor element manufacturing method
JP2013503486A (en) * 2009-08-26 2013-01-31 ディー・ツー・エス・インコーポレイテッド Method and apparatus for producing surfaces with variable beam blur using charged particle beam lithography
JP2013508972A (en) * 2009-10-21 2013-03-07 ディー・ツー・エス・インコーポレイテッド Method for fracturing a pattern written by a shaped charged particle beam writing device using lead-in shots
US8828628B2 (en) 2008-09-01 2014-09-09 D2S, Inc. Method and system for design of a reticle to be manufactured using variable shaped beam lithography
US8900778B2 (en) 2008-09-01 2014-12-02 D2S, Inc. Method for forming circular patterns on a surface
US8916315B2 (en) 2009-08-26 2014-12-23 D2S, Inc. Method for fracturing and forming a pattern using shaped beam charged particle beam lithography
US9034542B2 (en) 2011-06-25 2015-05-19 D2S, Inc. Method and system for forming patterns with charged particle beam lithography
US9038003B2 (en) 2012-04-18 2015-05-19 D2S, Inc. Method and system for critical dimension uniformity using charged particle beam lithography
US9043734B2 (en) 2008-09-01 2015-05-26 D2S, Inc. Method and system for forming high accuracy patterns using charged particle beam lithography
US9057956B2 (en) 2011-02-28 2015-06-16 D2S, Inc. Method and system for design of enhanced edge slope patterns for charged particle beam lithography
US9091946B2 (en) 2011-04-26 2015-07-28 D2S, Inc. Method and system for forming non-manhattan patterns using variable shaped beam lithography
US9323140B2 (en) 2008-09-01 2016-04-26 D2S, Inc. Method and system for forming a pattern on a reticle using charged particle beam lithography
US9341936B2 (en) 2008-09-01 2016-05-17 D2S, Inc. Method and system for forming a pattern on a reticle using charged particle beam lithography
US9372391B2 (en) 2008-09-01 2016-06-21 D2S, Inc. Method and system for forming patterns using charged particle beam lithography with variable pattern dosage
US9400857B2 (en) 2011-09-19 2016-07-26 D2S, Inc. Method and system for forming patterns using charged particle beam lithography
US9448473B2 (en) 2009-08-26 2016-09-20 D2S, Inc. Method for fracturing and forming a pattern using shaped beam charged particle beam lithography
US9612530B2 (en) 2011-02-28 2017-04-04 D2S, Inc. Method and system for design of enhanced edge slope patterns for charged particle beam lithography
US9859100B2 (en) 2012-04-18 2018-01-02 D2S, Inc. Method and system for dimensional uniformity using charged particle beam lithography
JP2021158234A (en) * 2020-03-27 2021-10-07 日本電子株式会社 Charged particle beam drawing device and drawing method

Cited By (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1980002772A1 (en) * 1979-06-08 1980-12-11 Fujitsu Ltd Electron beam projecting system
JPS60196941A (en) * 1984-02-29 1985-10-05 Fujitsu Ltd Electron beam exposure
JPS6182425A (en) * 1984-09-29 1986-04-26 Toshiba Corp Charged beam exposure equipment
JP4554749B2 (en) * 2000-01-25 2010-09-29 株式会社アドバンテスト Electron beam exposure apparatus and semiconductor element manufacturing method
US9268214B2 (en) 2008-09-01 2016-02-23 D2S, Inc. Method for forming circular patterns on a surface
US9341936B2 (en) 2008-09-01 2016-05-17 D2S, Inc. Method and system for forming a pattern on a reticle using charged particle beam lithography
US8828628B2 (en) 2008-09-01 2014-09-09 D2S, Inc. Method and system for design of a reticle to be manufactured using variable shaped beam lithography
US8900778B2 (en) 2008-09-01 2014-12-02 D2S, Inc. Method for forming circular patterns on a surface
US10101648B2 (en) 2008-09-01 2018-10-16 D2S, Inc. Method and system for forming a pattern on a reticle using charged particle beam lithography
US9715169B2 (en) 2008-09-01 2017-07-25 D2S, Inc. Method and system for forming a pattern on a reticle using charged particle beam lithography
US9625809B2 (en) 2008-09-01 2017-04-18 D2S, Inc. Method and system for forming patterns using charged particle beam lithography with variable pattern dosage
US9043734B2 (en) 2008-09-01 2015-05-26 D2S, Inc. Method and system for forming high accuracy patterns using charged particle beam lithography
US9372391B2 (en) 2008-09-01 2016-06-21 D2S, Inc. Method and system for forming patterns using charged particle beam lithography with variable pattern dosage
US9323140B2 (en) 2008-09-01 2016-04-26 D2S, Inc. Method and system for forming a pattern on a reticle using charged particle beam lithography
US9274412B2 (en) 2008-09-01 2016-03-01 D2S, Inc. Method and system for design of a reticle to be manufactured using variable shaped beam lithography
US8916315B2 (en) 2009-08-26 2014-12-23 D2S, Inc. Method for fracturing and forming a pattern using shaped beam charged particle beam lithography
US9448473B2 (en) 2009-08-26 2016-09-20 D2S, Inc. Method for fracturing and forming a pattern using shaped beam charged particle beam lithography
JP2013503486A (en) * 2009-08-26 2013-01-31 ディー・ツー・エス・インコーポレイテッド Method and apparatus for producing surfaces with variable beam blur using charged particle beam lithography
JP2013508972A (en) * 2009-10-21 2013-03-07 ディー・ツー・エス・インコーポレイテッド Method for fracturing a pattern written by a shaped charged particle beam writing device using lead-in shots
US9612530B2 (en) 2011-02-28 2017-04-04 D2S, Inc. Method and system for design of enhanced edge slope patterns for charged particle beam lithography
US9057956B2 (en) 2011-02-28 2015-06-16 D2S, Inc. Method and system for design of enhanced edge slope patterns for charged particle beam lithography
US9091946B2 (en) 2011-04-26 2015-07-28 D2S, Inc. Method and system for forming non-manhattan patterns using variable shaped beam lithography
US9465297B2 (en) 2011-06-25 2016-10-11 D2S, Inc. Method and system for forming patterns with charged particle beam lithography
US9034542B2 (en) 2011-06-25 2015-05-19 D2S, Inc. Method and system for forming patterns with charged particle beam lithography
US10031413B2 (en) 2011-09-19 2018-07-24 D2S, Inc. Method and system for forming patterns using charged particle beam lithography
US9400857B2 (en) 2011-09-19 2016-07-26 D2S, Inc. Method and system for forming patterns using charged particle beam lithography
US9038003B2 (en) 2012-04-18 2015-05-19 D2S, Inc. Method and system for critical dimension uniformity using charged particle beam lithography
US9859100B2 (en) 2012-04-18 2018-01-02 D2S, Inc. Method and system for dimensional uniformity using charged particle beam lithography
US10431422B2 (en) 2012-04-18 2019-10-01 D2S, Inc. Method and system for dimensional uniformity using charged particle beam lithography
JP2021158234A (en) * 2020-03-27 2021-10-07 日本電子株式会社 Charged particle beam drawing device and drawing method

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