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JPS5422163A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5422163A
JPS5422163A JP8665377A JP8665377A JPS5422163A JP S5422163 A JPS5422163 A JP S5422163A JP 8665377 A JP8665377 A JP 8665377A JP 8665377 A JP8665377 A JP 8665377A JP S5422163 A JPS5422163 A JP S5422163A
Authority
JP
Japan
Prior art keywords
copper
semiconductor device
semiconductor
fatugue
drvice
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8665377A
Other languages
Japanese (ja)
Inventor
Tsukasa Hattori
Osamu Usuda
Hiroyuki Baba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP8665377A priority Critical patent/JPS5422163A/en
Publication of JPS5422163A publication Critical patent/JPS5422163A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Die Bonding (AREA)

Abstract

PURPOSE: To obtain a semiconductor drvice which features a structure highly resistant to the thermal shock and the heat fatugue by installing a metal layer to reduce or block the copper diffusion velocity onto the copper or the copper alloy substrate.
COPYRIGHT: (C)1979,JPO&Japio
JP8665377A 1977-07-21 1977-07-21 Semiconductor device Pending JPS5422163A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8665377A JPS5422163A (en) 1977-07-21 1977-07-21 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8665377A JPS5422163A (en) 1977-07-21 1977-07-21 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5422163A true JPS5422163A (en) 1979-02-19

Family

ID=13892979

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8665377A Pending JPS5422163A (en) 1977-07-21 1977-07-21 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5422163A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4634638A (en) * 1981-12-17 1987-01-06 International Business Machines Corporation High melting point copper-gold-tin brazing alloy for chip carriers
US4929516A (en) * 1985-03-14 1990-05-29 Olin Corporation Semiconductor die attach system
US4978052A (en) * 1986-11-07 1990-12-18 Olin Corporation Semiconductor die attach system
US5021300A (en) * 1989-09-05 1991-06-04 Raytheon Company Solder back contact
JPH03194939A (en) * 1989-12-22 1991-08-26 Fuji Electric Co Ltd How to join metal and silicon

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4634638A (en) * 1981-12-17 1987-01-06 International Business Machines Corporation High melting point copper-gold-tin brazing alloy for chip carriers
US4929516A (en) * 1985-03-14 1990-05-29 Olin Corporation Semiconductor die attach system
US4978052A (en) * 1986-11-07 1990-12-18 Olin Corporation Semiconductor die attach system
US5021300A (en) * 1989-09-05 1991-06-04 Raytheon Company Solder back contact
JPH03194939A (en) * 1989-12-22 1991-08-26 Fuji Electric Co Ltd How to join metal and silicon

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