JPS54162969A - Plasma etching device - Google Patents
Plasma etching deviceInfo
- Publication number
- JPS54162969A JPS54162969A JP7254178A JP7254178A JPS54162969A JP S54162969 A JPS54162969 A JP S54162969A JP 7254178 A JP7254178 A JP 7254178A JP 7254178 A JP7254178 A JP 7254178A JP S54162969 A JPS54162969 A JP S54162969A
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- cover
- main body
- oxide film
- generator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE: To prevent deterioration of the container of the plasma etching device by coating the metal oxide film which has no reaction to the plasma or the radical grown by the plasma onto the inner wall of the container.
CONSTITUTION: Plasma generator 9 consists of plasma generator main body 1 made of the quartz glass or the like and cover 10 doubling the observation window to block up the opening part of main body 1. Metal oxide film 11 and 12 such as the aluminum oxide film and the like are coated on the inner wall of generator 9. In this constitution, film 11 and 12 have no reaction to the plasma caused by the plasma etching or the radical grown by the plasma to be steady chemically and not to be etched at all. Thus, the main body and the cover can be well protected. With coating of transparent film 12 to cover 10, the terminal point of etching can be detected accurately with no lowering of the transparency of cover 10.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7254178A JPS54162969A (en) | 1978-06-14 | 1978-06-14 | Plasma etching device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7254178A JPS54162969A (en) | 1978-06-14 | 1978-06-14 | Plasma etching device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS54162969A true JPS54162969A (en) | 1979-12-25 |
Family
ID=13492310
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7254178A Pending JPS54162969A (en) | 1978-06-14 | 1978-06-14 | Plasma etching device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54162969A (en) |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4341616A (en) * | 1980-01-25 | 1982-07-27 | Mitsubishi Denki Kabushiki Kaisha | Dry etching device |
| JPS59103345A (en) * | 1982-12-03 | 1984-06-14 | Mitsubishi Electric Corp | Plasma processing apparatus |
| JPS60169139A (en) * | 1984-02-13 | 1985-09-02 | Canon Inc | Vapor-phase treating apparatus |
| US5443686A (en) * | 1992-01-15 | 1995-08-22 | International Business Machines Corporation Inc. | Plasma CVD apparatus and processes |
| US6077718A (en) * | 1985-07-23 | 2000-06-20 | Canon Kabushiki Kaisha | Method for forming deposited film |
| US6656535B2 (en) | 2001-12-21 | 2003-12-02 | Applied Materials, Inc | Method of fabricating a coated process chamber component |
| US6777045B2 (en) | 2001-06-27 | 2004-08-17 | Applied Materials Inc. | Chamber components having textured surfaces and method of manufacture |
| US6902628B2 (en) | 2002-11-25 | 2005-06-07 | Applied Materials, Inc. | Method of cleaning a coated process chamber component |
| US7041200B2 (en) | 2002-04-19 | 2006-05-09 | Applied Materials, Inc. | Reducing particle generation during sputter deposition |
| US9068273B2 (en) | 2002-11-25 | 2015-06-30 | Quantum Global Technologies LLC | Electrochemical removal of tantalum-containing materials |
| JP2019033249A (en) * | 2017-07-13 | 2019-02-28 | アーエスエム・イーぺー・ホールディング・ベスローテン・フェンノートシャップ | Apparatus and method for removal of oxides and carbon from semiconductor films in single processing chamber |
| US10347475B2 (en) | 2005-10-31 | 2019-07-09 | Applied Materials, Inc. | Holding assembly for substrate processing chamber |
| US12272527B2 (en) | 2018-05-09 | 2025-04-08 | Asm Ip Holding B.V. | Apparatus for use with hydrogen radicals and method of using same |
-
1978
- 1978-06-14 JP JP7254178A patent/JPS54162969A/en active Pending
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4341616A (en) * | 1980-01-25 | 1982-07-27 | Mitsubishi Denki Kabushiki Kaisha | Dry etching device |
| JPS59103345A (en) * | 1982-12-03 | 1984-06-14 | Mitsubishi Electric Corp | Plasma processing apparatus |
| JPS60169139A (en) * | 1984-02-13 | 1985-09-02 | Canon Inc | Vapor-phase treating apparatus |
| US6077718A (en) * | 1985-07-23 | 2000-06-20 | Canon Kabushiki Kaisha | Method for forming deposited film |
| US5443686A (en) * | 1992-01-15 | 1995-08-22 | International Business Machines Corporation Inc. | Plasma CVD apparatus and processes |
| US6777045B2 (en) | 2001-06-27 | 2004-08-17 | Applied Materials Inc. | Chamber components having textured surfaces and method of manufacture |
| US6933025B2 (en) | 2001-06-27 | 2005-08-23 | Applied Materials, Inc. | Chamber having components with textured surfaces and method of manufacture |
| US6656535B2 (en) | 2001-12-21 | 2003-12-02 | Applied Materials, Inc | Method of fabricating a coated process chamber component |
| US7041200B2 (en) | 2002-04-19 | 2006-05-09 | Applied Materials, Inc. | Reducing particle generation during sputter deposition |
| US6902628B2 (en) | 2002-11-25 | 2005-06-07 | Applied Materials, Inc. | Method of cleaning a coated process chamber component |
| US9068273B2 (en) | 2002-11-25 | 2015-06-30 | Quantum Global Technologies LLC | Electrochemical removal of tantalum-containing materials |
| US10347475B2 (en) | 2005-10-31 | 2019-07-09 | Applied Materials, Inc. | Holding assembly for substrate processing chamber |
| US11658016B2 (en) | 2005-10-31 | 2023-05-23 | Applied Materials, Inc. | Shield for a substrate processing chamber |
| JP2019033249A (en) * | 2017-07-13 | 2019-02-28 | アーエスエム・イーぺー・ホールディング・ベスローテン・フェンノートシャップ | Apparatus and method for removal of oxides and carbon from semiconductor films in single processing chamber |
| US12272527B2 (en) | 2018-05-09 | 2025-04-08 | Asm Ip Holding B.V. | Apparatus for use with hydrogen radicals and method of using same |
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