JPS54162492A - Semiconductor pressure transducer - Google Patents
Semiconductor pressure transducerInfo
- Publication number
- JPS54162492A JPS54162492A JP7175578A JP7175578A JPS54162492A JP S54162492 A JPS54162492 A JP S54162492A JP 7175578 A JP7175578 A JP 7175578A JP 7175578 A JP7175578 A JP 7175578A JP S54162492 A JPS54162492 A JP S54162492A
- Authority
- JP
- Japan
- Prior art keywords
- main surface
- diffusion
- resistances
- diaphragm
- same
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 238000009792 diffusion process Methods 0.000 abstract 5
Landscapes
- Pressure Sensors (AREA)
Abstract
PURPOSE: To make characteristics of an output voltage to pressure symmetric by providing at least four diffusion resistances of the same type at the same positions of both sides of a diaphragm and by composing a bridge circuit of them.
CONSTITUTION: On the 1st main surface of diaphragm 1, diffusion gauge resistances 2a to 2d in the same structure are provided and on the 2nd main surface, diffusion guage resistances 2e to 2h in the same structure as those on the 1st surface are provided at the same positions. To diaphragm 1, support base 4 with the same thermal expansivity is bonded. In this constitution, characteristics of an output to pressure become symmetric for support base 4 is provided only on one side. Here, diffusion gauges 2a and 2f, 2b and 2e, 2c and 2h, and 2d and 2g are connected in series and then to the bridge circuit. Consequently, when the 1st main surface changes in shape from concave to convex and the 2nd main surface from convex to concave, the output voltages of diffusion gauge resistances change in the positive direction on the 1st main surface and in the negative direction on the 2nd main surface, but characteristics of the output voltage to pressure can be made symmetric by bridge connections.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7175578A JPS54162492A (en) | 1978-06-13 | 1978-06-13 | Semiconductor pressure transducer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7175578A JPS54162492A (en) | 1978-06-13 | 1978-06-13 | Semiconductor pressure transducer |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS54162492A true JPS54162492A (en) | 1979-12-24 |
JPS6153872B2 JPS6153872B2 (en) | 1986-11-19 |
Family
ID=13469659
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7175578A Granted JPS54162492A (en) | 1978-06-13 | 1978-06-13 | Semiconductor pressure transducer |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54162492A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6077470A (en) * | 1983-10-04 | 1985-05-02 | Nec Corp | Diaphragm type semiconductor pressure sensor |
US4622098A (en) * | 1982-10-27 | 1986-11-11 | Tokyo Shibaura Denki Kabushiki Kaisha | Method for manufacturing semiconductor strain sensor |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0536777U (en) * | 1991-10-18 | 1993-05-18 | 菊水電子工業株式会社 | Connector retention prevention device |
-
1978
- 1978-06-13 JP JP7175578A patent/JPS54162492A/en active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4622098A (en) * | 1982-10-27 | 1986-11-11 | Tokyo Shibaura Denki Kabushiki Kaisha | Method for manufacturing semiconductor strain sensor |
JPS6077470A (en) * | 1983-10-04 | 1985-05-02 | Nec Corp | Diaphragm type semiconductor pressure sensor |
Also Published As
Publication number | Publication date |
---|---|
JPS6153872B2 (en) | 1986-11-19 |
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