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JPS54162492A - Semiconductor pressure transducer - Google Patents

Semiconductor pressure transducer

Info

Publication number
JPS54162492A
JPS54162492A JP7175578A JP7175578A JPS54162492A JP S54162492 A JPS54162492 A JP S54162492A JP 7175578 A JP7175578 A JP 7175578A JP 7175578 A JP7175578 A JP 7175578A JP S54162492 A JPS54162492 A JP S54162492A
Authority
JP
Japan
Prior art keywords
main surface
diffusion
resistances
diaphragm
same
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7175578A
Other languages
Japanese (ja)
Other versions
JPS6153872B2 (en
Inventor
Toru Kameda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP7175578A priority Critical patent/JPS54162492A/en
Publication of JPS54162492A publication Critical patent/JPS54162492A/en
Publication of JPS6153872B2 publication Critical patent/JPS6153872B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Pressure Sensors (AREA)

Abstract

PURPOSE: To make characteristics of an output voltage to pressure symmetric by providing at least four diffusion resistances of the same type at the same positions of both sides of a diaphragm and by composing a bridge circuit of them.
CONSTITUTION: On the 1st main surface of diaphragm 1, diffusion gauge resistances 2a to 2d in the same structure are provided and on the 2nd main surface, diffusion guage resistances 2e to 2h in the same structure as those on the 1st surface are provided at the same positions. To diaphragm 1, support base 4 with the same thermal expansivity is bonded. In this constitution, characteristics of an output to pressure become symmetric for support base 4 is provided only on one side. Here, diffusion gauges 2a and 2f, 2b and 2e, 2c and 2h, and 2d and 2g are connected in series and then to the bridge circuit. Consequently, when the 1st main surface changes in shape from concave to convex and the 2nd main surface from convex to concave, the output voltages of diffusion gauge resistances change in the positive direction on the 1st main surface and in the negative direction on the 2nd main surface, but characteristics of the output voltage to pressure can be made symmetric by bridge connections.
COPYRIGHT: (C)1979,JPO&Japio
JP7175578A 1978-06-13 1978-06-13 Semiconductor pressure transducer Granted JPS54162492A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7175578A JPS54162492A (en) 1978-06-13 1978-06-13 Semiconductor pressure transducer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7175578A JPS54162492A (en) 1978-06-13 1978-06-13 Semiconductor pressure transducer

Publications (2)

Publication Number Publication Date
JPS54162492A true JPS54162492A (en) 1979-12-24
JPS6153872B2 JPS6153872B2 (en) 1986-11-19

Family

ID=13469659

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7175578A Granted JPS54162492A (en) 1978-06-13 1978-06-13 Semiconductor pressure transducer

Country Status (1)

Country Link
JP (1) JPS54162492A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6077470A (en) * 1983-10-04 1985-05-02 Nec Corp Diaphragm type semiconductor pressure sensor
US4622098A (en) * 1982-10-27 1986-11-11 Tokyo Shibaura Denki Kabushiki Kaisha Method for manufacturing semiconductor strain sensor

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0536777U (en) * 1991-10-18 1993-05-18 菊水電子工業株式会社 Connector retention prevention device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4622098A (en) * 1982-10-27 1986-11-11 Tokyo Shibaura Denki Kabushiki Kaisha Method for manufacturing semiconductor strain sensor
JPS6077470A (en) * 1983-10-04 1985-05-02 Nec Corp Diaphragm type semiconductor pressure sensor

Also Published As

Publication number Publication date
JPS6153872B2 (en) 1986-11-19

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