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JPS54160600A - Production of silicon nitride - Google Patents

Production of silicon nitride

Info

Publication number
JPS54160600A
JPS54160600A JP6876678A JP6876678A JPS54160600A JP S54160600 A JPS54160600 A JP S54160600A JP 6876678 A JP6876678 A JP 6876678A JP 6876678 A JP6876678 A JP 6876678A JP S54160600 A JPS54160600 A JP S54160600A
Authority
JP
Japan
Prior art keywords
silicon nitride
halogen
amorphous silicon
containing amorphous
gas flow
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6876678A
Other languages
Japanese (ja)
Inventor
Kunihiko Terase
Hitoshi Kijimuta
Yasuhiko Endo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AGC Inc
Original Assignee
Asahi Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Glass Co Ltd filed Critical Asahi Glass Co Ltd
Priority to JP6876678A priority Critical patent/JPS54160600A/en
Publication of JPS54160600A publication Critical patent/JPS54160600A/en
Pending legal-status Critical Current

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Abstract

PURPOSE: A halogen -containing amorphous silicon nitride is heat trated at specific temperature and time period in N2 and/or NH3 gas flow, thereby producing a substantially chlorine free silicon nitride without causing β crystal transformation.
CONSTITUTION: A halogen-containing inorganic silicon compound (e.g. SiCl4) and NH3 are reacted in gas phase at 400 to 160°C to produce halogen-containing amorphous silicon nitride. The resulted haogen-containing amorphous silicon nitride powder is, preferably after being transferred into a different container, held at 1515 to 1700°C for 0.2 to 8 hours in the absence of O2 and in N2 and/or NH3 gas flow to effect dehalogenation, producing desired silicon nitride.
COPYRIGHT: (C)1979,JPO&Japio
JP6876678A 1978-06-09 1978-06-09 Production of silicon nitride Pending JPS54160600A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6876678A JPS54160600A (en) 1978-06-09 1978-06-09 Production of silicon nitride

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6876678A JPS54160600A (en) 1978-06-09 1978-06-09 Production of silicon nitride

Publications (1)

Publication Number Publication Date
JPS54160600A true JPS54160600A (en) 1979-12-19

Family

ID=13383176

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6876678A Pending JPS54160600A (en) 1978-06-09 1978-06-09 Production of silicon nitride

Country Status (1)

Country Link
JP (1) JPS54160600A (en)

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