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JPS54159873A - Forming method of pattern on thin film - Google Patents

Forming method of pattern on thin film

Info

Publication number
JPS54159873A
JPS54159873A JP6947278A JP6947278A JPS54159873A JP S54159873 A JPS54159873 A JP S54159873A JP 6947278 A JP6947278 A JP 6947278A JP 6947278 A JP6947278 A JP 6947278A JP S54159873 A JPS54159873 A JP S54159873A
Authority
JP
Japan
Prior art keywords
type resistor
thin film
pattern
negative
positive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6947278A
Other languages
Japanese (ja)
Inventor
Yasushi Suda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP6947278A priority Critical patent/JPS54159873A/en
Publication of JPS54159873A publication Critical patent/JPS54159873A/en
Pending legal-status Critical Current

Links

Landscapes

  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE: To obtain a high-precision, chemical-proof and heat-proof pattern by forming patterns of a positive-type resistor and a negative-type resistor in order on a thin film substrate and using them as a masking material.
CONSTITUTION: Positive-type resistor 3 is applied to substrate 1 where thin film metal 1 is deposited by vacuum evaporation or sputtering, and negative-type resistor 4 is applied by the spinner system or the spray system, and they are subjected to pre-bake for about severalten minutes similarly. Next, a desired mask is matched onto two-layer resistors and ultraviolet-ray exposure is performed to develop the negative-type resistor. Next, after post-bake for about 30 minutes, a desired photo mask is matched again, and ultraviolet-ray exposure is performed to develop the positive-type resistor, thus forming a final resistor pattern. Finally, thin film metal 2 is subjected to etching processing to remove two-layer resistors.
COPYRIGHT: (C)1979,JPO&Japio
JP6947278A 1978-06-08 1978-06-08 Forming method of pattern on thin film Pending JPS54159873A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6947278A JPS54159873A (en) 1978-06-08 1978-06-08 Forming method of pattern on thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6947278A JPS54159873A (en) 1978-06-08 1978-06-08 Forming method of pattern on thin film

Publications (1)

Publication Number Publication Date
JPS54159873A true JPS54159873A (en) 1979-12-18

Family

ID=13403644

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6947278A Pending JPS54159873A (en) 1978-06-08 1978-06-08 Forming method of pattern on thin film

Country Status (1)

Country Link
JP (1) JPS54159873A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60500229A (en) * 1983-01-24 1985-02-21 エイ・ティ・アンド・ティ・コーポレーション Two-layer Shibagai resist system for substrate patterns with high reflectance
JPS60116132A (en) * 1983-11-29 1985-06-22 Fujitsu Ltd Method of forming negative resist pattern

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60500229A (en) * 1983-01-24 1985-02-21 エイ・ティ・アンド・ティ・コーポレーション Two-layer Shibagai resist system for substrate patterns with high reflectance
JPS60116132A (en) * 1983-11-29 1985-06-22 Fujitsu Ltd Method of forming negative resist pattern

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