JPS54145383A - Liquid phase growing boat for semiconductor compound crystal - Google Patents
Liquid phase growing boat for semiconductor compound crystalInfo
- Publication number
- JPS54145383A JPS54145383A JP5304078A JP5304078A JPS54145383A JP S54145383 A JPS54145383 A JP S54145383A JP 5304078 A JP5304078 A JP 5304078A JP 5304078 A JP5304078 A JP 5304078A JP S54145383 A JPS54145383 A JP S54145383A
- Authority
- JP
- Japan
- Prior art keywords
- recess
- boat
- lid
- molten liquid
- liquid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 150000001875 compounds Chemical class 0.000 title abstract 3
- 239000013078 crystal Substances 0.000 title abstract 3
- 239000007791 liquid phase Substances 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000007788 liquid Substances 0.000 abstract 5
- 239000000758 substrate Substances 0.000 abstract 3
- 230000002159 abnormal effect Effects 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
PURPOSE: To prevent abnormal crystal grow at its periphery and to provide a good surface liquid phase crystal growing, a boat has a shape in which the distance between the substrate surface in the recess of the sliding plate and the flat center surface of lid recess is made smaller than the maximum effective length of molten liquid which is determined by the diffusion length of solute in the molten liquid.
CONSTITUTION: A boat 31 is placed on the sliding plate 36 having a recess 37. The boat 31 has an opening 32 reaching the top surface of the plate 36 to contain semiconductor compound molten liquid 39. The boat 31 has further a lid 33 for the recess 37. The bottom of the lid 33 forms a recess consisting of flat center face 34 and peripherical portion 35 reaching to the top of the recess 37. The distance between the face 34 and the top face 40a of the substrate 40 contained in the recess 37 is made less than the maximum effective amount of the molten compound. As a result, the thickness in molten liquid surface 35 enclosed by the recess 37 and the recess of the lid 33 is made smaller than that in the surface 34. This is effective in reducing abnormal growing at the periphery of liquid growing layer which is formed on the substrate 40.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5304078A JPS54145383A (en) | 1978-05-02 | 1978-05-02 | Liquid phase growing boat for semiconductor compound crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5304078A JPS54145383A (en) | 1978-05-02 | 1978-05-02 | Liquid phase growing boat for semiconductor compound crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS54145383A true JPS54145383A (en) | 1979-11-13 |
Family
ID=12931767
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5304078A Pending JPS54145383A (en) | 1978-05-02 | 1978-05-02 | Liquid phase growing boat for semiconductor compound crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54145383A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5710923A (en) * | 1980-06-25 | 1982-01-20 | Fujitsu Ltd | Liquid phase epitaxial growth device and its growing process |
-
1978
- 1978-05-02 JP JP5304078A patent/JPS54145383A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5710923A (en) * | 1980-06-25 | 1982-01-20 | Fujitsu Ltd | Liquid phase epitaxial growth device and its growing process |
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