JPS54132173A - Schottky barrier diode - Google Patents
Schottky barrier diodeInfo
- Publication number
- JPS54132173A JPS54132173A JP4012978A JP4012978A JPS54132173A JP S54132173 A JPS54132173 A JP S54132173A JP 4012978 A JP4012978 A JP 4012978A JP 4012978 A JP4012978 A JP 4012978A JP S54132173 A JPS54132173 A JP S54132173A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- schottky barrier
- width
- reverse
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000004888 barrier function Effects 0.000 title abstract 4
- 239000002184 metal Substances 0.000 abstract 2
- 239000006185 dispersion Substances 0.000 abstract 1
- 238000003475 lamination Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To improve the relation between the reverse surge rating and the forward property by providing the barrier metal to the outer N layer of the semiconductor wafer composed of the N+-N-N+-N layer.
CONSTITUTION: N-type layer 22 of width W02, N+-type layer 23 and N-type layer 24 of width W2 are formed on N+-type Si substrate 21 in lamination. Thus a diode composed of the N+-N-N+-N laye is obtained. Then barrier metal 25 is coated on layer 24. With applicatin of the reverse surge voltage to the Schottky barrier diode thus composed, space charge region 26 extending into layer 24 is prevented by layer 23 from extending further. Thus, the forward resistance is reduced with imporved forward characteristics although the reverse dielectric strength is lowered slightly. Furthermore, the characteristic dispersion is also reduced. In this way, the new N+-N layer is formed in addition to the normal N+-N layer.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4012978A JPS54132173A (en) | 1978-04-05 | 1978-04-05 | Schottky barrier diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4012978A JPS54132173A (en) | 1978-04-05 | 1978-04-05 | Schottky barrier diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS54132173A true JPS54132173A (en) | 1979-10-13 |
Family
ID=12572192
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4012978A Pending JPS54132173A (en) | 1978-04-05 | 1978-04-05 | Schottky barrier diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54132173A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6690035B1 (en) * | 2000-03-03 | 2004-02-10 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device having an active region of alternating layers |
| CN106898638A (en) * | 2017-01-16 | 2017-06-27 | 中国电子科技集团公司第五十五研究所 | A kind of SiC schottky diode structure and preparation method for improving surge capacity |
-
1978
- 1978-04-05 JP JP4012978A patent/JPS54132173A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6690035B1 (en) * | 2000-03-03 | 2004-02-10 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device having an active region of alternating layers |
| US6989553B2 (en) | 2000-03-03 | 2006-01-24 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device having an active region of alternating layers |
| CN106898638A (en) * | 2017-01-16 | 2017-06-27 | 中国电子科技集团公司第五十五研究所 | A kind of SiC schottky diode structure and preparation method for improving surge capacity |
| CN106898638B (en) * | 2017-01-16 | 2019-09-10 | 中国电子科技集团公司第五十五研究所 | A kind of SiC schottky diode structure and preparation method improving surge capacity |
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