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JPS54131866A - Heat treatment device - Google Patents

Heat treatment device

Info

Publication number
JPS54131866A
JPS54131866A JP3993178A JP3993178A JPS54131866A JP S54131866 A JPS54131866 A JP S54131866A JP 3993178 A JP3993178 A JP 3993178A JP 3993178 A JP3993178 A JP 3993178A JP S54131866 A JPS54131866 A JP S54131866A
Authority
JP
Japan
Prior art keywords
laser
sample
unit
heated
raw material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3993178A
Other languages
Japanese (ja)
Inventor
Michiyuki Harada
Katsumi Murase
Masayasu Miyake
Tsunetaka Sudo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP3993178A priority Critical patent/JPS54131866A/en
Publication of JPS54131866A publication Critical patent/JPS54131866A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To carry out the diffusion of the impurity as well as the formation of the film by having the heat treatment for the fixed pattern at the fixed position without forming the photo mask in advance on the test sample.
CONSTITUTION: The raw material gas is introduced 15; shift control 11 is given to stage 9 holding sample 8 to have positioning; and then laser is generated 1, 4. Laser L3 is condensed 6 through optical system 5 to scan the sample with deflection 7 controlled 11. Based on this scanning, laser 10 is detected 10, and position signal E to be heated by the layer is sent to control unit 11. Unit 11 performs the control at the due time 2 based on the pattern information given from unit 11, and laser L2 is generated to heat up the sample via deflected laser L8 and the fixed pattern. With selection of the pulse duration and the period of L1 and thus L8, the position of the sample is heated with the corresponding depth. Thus, the selective position reacts to the raw material gas introduced into chamber 14, ensuring the impurity diffusion and the film formation.
COPYRIGHT: (C)1979,JPO&Japio
JP3993178A 1978-04-05 1978-04-05 Heat treatment device Pending JPS54131866A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3993178A JPS54131866A (en) 1978-04-05 1978-04-05 Heat treatment device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3993178A JPS54131866A (en) 1978-04-05 1978-04-05 Heat treatment device

Publications (1)

Publication Number Publication Date
JPS54131866A true JPS54131866A (en) 1979-10-13

Family

ID=12566679

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3993178A Pending JPS54131866A (en) 1978-04-05 1978-04-05 Heat treatment device

Country Status (1)

Country Link
JP (1) JPS54131866A (en)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5745923A (en) * 1980-09-04 1982-03-16 Seiko Epson Corp Light diffusing method
JPS57500492A (en) * 1980-05-12 1982-03-18
JPS5750428A (en) * 1980-09-12 1982-03-24 Nec Corp Method and apparatus for manufacturing semiconductor device
JPS57173937A (en) * 1981-04-17 1982-10-26 Matsushita Electric Ind Co Ltd Treatment for solid by laser
JPS57181119A (en) * 1981-05-01 1982-11-08 Agency Of Ind Science & Technol Forming method for pattern
JPS57202167U (en) * 1981-06-15 1982-12-23
JPS58197816A (en) * 1982-05-14 1983-11-17 Nippon Telegr & Teleph Corp <Ntt> Manufacture of thin-film crystal
JPS6053017A (en) * 1983-09-02 1985-03-26 Tokyo Erekutoron Kk Vapor growth device using laser beam
JPS60118690A (en) * 1983-11-29 1985-06-26 Rikagaku Kenkyusho Method for growing crystal
JPS62186527A (en) * 1986-02-13 1987-08-14 Canon Inc Deposited film forming method
JPH05326430A (en) * 1992-03-26 1993-12-10 Semiconductor Energy Lab Co Ltd Laser processing method and laser processing apparatus
US6655767B2 (en) 1992-03-26 2003-12-02 Semiconductor Energy Laboratory Co., Ltd. Active matrix display device

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57500492A (en) * 1980-05-12 1982-03-18
JPS5745923A (en) * 1980-09-04 1982-03-16 Seiko Epson Corp Light diffusing method
JPS5750428A (en) * 1980-09-12 1982-03-24 Nec Corp Method and apparatus for manufacturing semiconductor device
JPS57173937A (en) * 1981-04-17 1982-10-26 Matsushita Electric Ind Co Ltd Treatment for solid by laser
JPS57181119A (en) * 1981-05-01 1982-11-08 Agency Of Ind Science & Technol Forming method for pattern
JPS57202167U (en) * 1981-06-15 1982-12-23
JPS58197816A (en) * 1982-05-14 1983-11-17 Nippon Telegr & Teleph Corp <Ntt> Manufacture of thin-film crystal
JPS6053017A (en) * 1983-09-02 1985-03-26 Tokyo Erekutoron Kk Vapor growth device using laser beam
JPS60118690A (en) * 1983-11-29 1985-06-26 Rikagaku Kenkyusho Method for growing crystal
JPS62186527A (en) * 1986-02-13 1987-08-14 Canon Inc Deposited film forming method
JPH05326430A (en) * 1992-03-26 1993-12-10 Semiconductor Energy Lab Co Ltd Laser processing method and laser processing apparatus
US6655767B2 (en) 1992-03-26 2003-12-02 Semiconductor Energy Laboratory Co., Ltd. Active matrix display device
US7169657B2 (en) 1992-03-26 2007-01-30 Semiconductor Energy Laboratory Co., Ltd. Process for laser processing and apparatus for use in the same
US7781271B2 (en) 1992-03-26 2010-08-24 Semiconductor Energy Laboratory Co., Ltd. Process for laser processing and apparatus for use in the same

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