[go: up one dir, main page]

JPS54122653A - Sn-au base solder alloy - Google Patents

Sn-au base solder alloy

Info

Publication number
JPS54122653A
JPS54122653A JP2932178A JP2932178A JPS54122653A JP S54122653 A JPS54122653 A JP S54122653A JP 2932178 A JP2932178 A JP 2932178A JP 2932178 A JP2932178 A JP 2932178A JP S54122653 A JPS54122653 A JP S54122653A
Authority
JP
Japan
Prior art keywords
solder alloy
heat
layer
power transistor
constituted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2932178A
Other languages
Japanese (ja)
Inventor
Tetsuo Fujiwara
Kazunori Yoshimoto
Kazuo Suzuki
Hisaharu Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP2932178A priority Critical patent/JPS54122653A/en
Publication of JPS54122653A publication Critical patent/JPS54122653A/en
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
    • B23K35/262—Sn as the principal constituent

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Die Bonding (AREA)

Abstract

PURPOSE:To make manufacturable the titled inexpensive solder alloy which has good heat radiating performance, good thermal fatique resistance against the heat- affect, and good thermal cracking resistance, by including special amount of each of Au and Sn as the ingredients. CONSTITUTION:This solder alloy is constituted of 0.3-10% Au, and the balance of Sn. Whdn this solder alloy is used for constituting following giant power transistor, the heat diffusivity, specific heat, thermal conductivity, etc., and as a result the heat radiating effect, are improved, as compared with the one obtained by the conventional 80% Au - 20% Sn solder alloy. Above giant power transistor is constituted of the copper substrate 1, the solder alloy layer 2 due to this method, Mo layer 3, Au - Si layer 4, Si layer 5, and the sealing material 6. This solder alloy is suitable not only for the power transistor but also for other semiconductors like as thyristor, etc., which requires small heat-affect.
JP2932178A 1978-03-16 1978-03-16 Sn-au base solder alloy Pending JPS54122653A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2932178A JPS54122653A (en) 1978-03-16 1978-03-16 Sn-au base solder alloy

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2932178A JPS54122653A (en) 1978-03-16 1978-03-16 Sn-au base solder alloy

Publications (1)

Publication Number Publication Date
JPS54122653A true JPS54122653A (en) 1979-09-22

Family

ID=12272948

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2932178A Pending JPS54122653A (en) 1978-03-16 1978-03-16 Sn-au base solder alloy

Country Status (1)

Country Link
JP (1) JPS54122653A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06260579A (en) * 1993-03-04 1994-09-16 Hitachi Cable Ltd Composite lead frame and method of manufacturing the same
JP2008137017A (en) * 2006-11-30 2008-06-19 Mitsubishi Materials Corp Sn-Au ALLOY SOLDER PASTE HAVING EXCELLENT WETTABILITY AND VOID GENERATION RESISTANCE
JP2008161913A (en) * 2006-12-28 2008-07-17 Mitsubishi Materials Corp Sn-Au ALLOY SOLDER PASTE HAVING REDUCED PRODUCTION OF VOID

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06260579A (en) * 1993-03-04 1994-09-16 Hitachi Cable Ltd Composite lead frame and method of manufacturing the same
JP2008137017A (en) * 2006-11-30 2008-06-19 Mitsubishi Materials Corp Sn-Au ALLOY SOLDER PASTE HAVING EXCELLENT WETTABILITY AND VOID GENERATION RESISTANCE
JP2008161913A (en) * 2006-12-28 2008-07-17 Mitsubishi Materials Corp Sn-Au ALLOY SOLDER PASTE HAVING REDUCED PRODUCTION OF VOID

Similar Documents

Publication Publication Date Title
FR2452178A1 (en) SEMICONDUCTOR DEVICE WITH LOW THERMAL IMPEDANCE
JPS54122653A (en) Sn-au base solder alloy
JPS5424811A (en) Copper alloy for lead conductor of semiconductor device
JPS5654047A (en) Compound semiconductor device
GB1001254A (en) Improvements in or relating to semiconductor materials
JPS5297684A (en) Semiconductor element
JPS5429555A (en) Heat sink constituent
JPS52120774A (en) Semiconductor device
JPS55103772A (en) Semiconductor device
JPS54124990A (en) Semiconductor device
JPS5236980A (en) Heat sink for semiconductor devices
JPS5264287A (en) Group iii-v compound semiconductor element
JPS57128934A (en) Electric component
JPS5499566A (en) Semiconductor device
JPS53138677A (en) Vapor cooling type semiconductor device
JPS548469A (en) Heat sink for stud type semiconductors
JPS5269585A (en) Semiconductor device
JPS54148479A (en) Resin-sealed semiconductor device
JPS5567164A (en) 3[5 group compound semiconductor device
JPS5279873A (en) Semiconductor device
JPS52109872A (en) Semiconductor device
JPS5311584A (en) Semiconductor device
JPS5414159A (en) Manufacture for semiconductor device
JPS5588362A (en) Semiconductor device
JPS5375874A (en) Semiconductor device